Progress in Crystal Growth and Characterization最新文献

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Extrinsic doping of CdxHg1−xTe— A review CdxHg1−xTe - A外源掺杂研究进展
Progress in Crystal Growth and Characterization Pub Date : 1989-01-01 DOI: 10.1016/0146-3535(89)90003-8
P. Capper
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引用次数: 7
Reaction mechanisms in OMVPE growth of GaAs determined using D2 labelling experiments 用D2标记实验确定了GaAs在OMVPE生长中的反应机制
Progress in Crystal Growth and Characterization Pub Date : 1989-01-01 DOI: 10.1016/0146-3535(89)90017-8
G.B. Stringfellow
{"title":"Reaction mechanisms in OMVPE growth of GaAs determined using D2 labelling experiments","authors":"G.B. Stringfellow","doi":"10.1016/0146-3535(89)90017-8","DOIUrl":"10.1016/0146-3535(89)90017-8","url":null,"abstract":"<div><p>Reaction mechanisms in the organometallic vapor phase epitaxial (OMVPE) growth of GaAs using TMGa combined with either AsH<sub>3</sub> or tertiarybutylarsine (TBAs) are reviewed. The pyrolysis of each constituent in various ambients is discussed followed by a discussion of the combined systems used for actual GaAs growth.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"19 1","pages":"Pages 115-123"},"PeriodicalIF":0.0,"publicationDate":"1989-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(89)90017-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84513961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
X-ray scattering from point defect aggregates in single crystals 单晶中点缺陷聚集体的x射线散射
Progress in Crystal Growth and Characterization Pub Date : 1989-01-01 DOI: 10.1016/0146-3535(89)90029-4
Krishan Lal
{"title":"X-ray scattering from point defect aggregates in single crystals","authors":"Krishan Lal","doi":"10.1016/0146-3535(89)90029-4","DOIUrl":"10.1016/0146-3535(89)90029-4","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"18 ","pages":"Pages 227-266"},"PeriodicalIF":0.0,"publicationDate":"1989-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(89)90029-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72858925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
New device concepts: The implications for MOVPE 新设备概念:对MOVPE的影响
Progress in Crystal Growth and Characterization Pub Date : 1989-01-01 DOI: 10.1016/0146-3535(89)90016-6
J.L. Beeby
{"title":"New device concepts: The implications for MOVPE","authors":"J.L. Beeby","doi":"10.1016/0146-3535(89)90016-6","DOIUrl":"10.1016/0146-3535(89)90016-6","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"19 1","pages":"Pages 107-114"},"PeriodicalIF":0.0,"publicationDate":"1989-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(89)90016-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80000235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The growth and characterization of CdxHg1−xTe (CMT) on GaAs for optical fibre communication devices CdxHg1−xTe (CMT)在光纤通信器件GaAs上的生长和表征
Progress in Crystal Growth and Characterization Pub Date : 1989-01-01 DOI: 10.1016/0146-3535(89)90013-0
L.M. Smith , J. Thompson , P. Mackett , G.T. Jenkin , T. Nguyen Duy , P. Gori , A. Cetronio , C. Lanzieri , G. Moccia
{"title":"The growth and characterization of CdxHg1−xTe (CMT) on GaAs for optical fibre communication devices","authors":"L.M. Smith ,&nbsp;J. Thompson ,&nbsp;P. Mackett ,&nbsp;G.T. Jenkin ,&nbsp;T. Nguyen Duy ,&nbsp;P. Gori ,&nbsp;A. Cetronio ,&nbsp;C. Lanzieri ,&nbsp;G. Moccia","doi":"10.1016/0146-3535(89)90013-0","DOIUrl":"10.1016/0146-3535(89)90013-0","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"19 1","pages":"Pages 63-81"},"PeriodicalIF":0.0,"publicationDate":"1989-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(89)90013-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87150602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The co-existence of multi-component liquid and solid intermediate phases before the hetero-LPE of III–V solid solutions III-V型固溶体异质lpe发生前,多组分液相和固相中间相共存
Progress in Crystal Growth and Characterization Pub Date : 1989-01-01 DOI: 10.1016/0146-3535(89)90004-X
Yu.B. Bolkhovityanov
{"title":"The co-existence of multi-component liquid and solid intermediate phases before the hetero-LPE of III–V solid solutions","authors":"Yu.B. Bolkhovityanov","doi":"10.1016/0146-3535(89)90004-X","DOIUrl":"10.1016/0146-3535(89)90004-X","url":null,"abstract":"<div><p>Liquid phase epitaxial growth of III–V solid solutions invariably involves contact between the multi-component saturated or undersaturated liquid and solid phases which are not in thermodynamic equilibrium because either the number of components is different or the composition of the layer to be grown differs from the composition of the underlying layer. The non-equilibrium system must relax to the final equilibrium state through some intermediate ones.</p><p>The main point of the present review is to show that all non-equilibrium systems encounted in hetero-LPE come through the following stages of relaxation: </p><ul><li><span>1.</span><span><p>1. Partial dissolution of the solid with simultaneous formation of a thin diffusive dividing layer (0.5–3 nm thick) (DDL) at the solid/liquid interface (in the subsurface region of the solid). The layer contains all the components of the given system and in some cases the quasi-equilibrium between the saturaed multi-component liquid and the solid diffusive dividing layer can be observed experimentally. If the DDL is mismatched to the substrate the former must be strained. So, the Gibbs potential of the solid increased additionally and the liquid must become supersaturated by additionally dissolving the substrate.</p></span></li><li><span>2.</span><span><p>2. The nucleation and the growth of centres of a new phase at some points on the solid/liquid interface with the simultaneous dissolution of the solid at other areas of the same interface (mechanism of “etch-back and regrowth”).</p></span></li><li><span>3.</span><span><p>3. The formation of a continuous epitaxial dividing layer (EDL), separating a bulk solid from a multi-component liquid. At this stage the system stratifies into a three-layer configuration: multi-component liquid/EDL/substrate, further relaxation is limited by a solid state diffusion.</p></span></li></ul><p>It is only during dedicated experiments on selected systems that stages 1 to 3 can be observed separately in their more or less pure form. Usually, the first and the second stages almost escape experimental detection due to an enormous variability in time scales and an inherent randomness of events during the “fast” stage 2. So, in practice the varied combination of relaxation modes is observed. It is, however, true that, among many parameters which influence the mode of non-equilibrium solid/liquid interface relaxation, the most critical are the temperature of isothermal contact between liquid and solid phases and the lattice mismatch between a substrate and a new solid phase. This concerns not only the magnitude of the mismatch but its sign as well.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"19 3","pages":"Pages 159-187"},"PeriodicalIF":0.0,"publicationDate":"1989-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(89)90004-X","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89412283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Small-angle scattering of X-rays x射线的小角度散射
Progress in Crystal Growth and Characterization Pub Date : 1989-01-01 DOI: 10.1016/0146-3535(89)90023-3
H.B. Stuhrmann
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引用次数: 11
Recent advances in x-ray characterization of materials — II 材料x射线表征的新进展-ⅱ
Progress in Crystal Growth and Characterization Pub Date : 1989-01-01 DOI: 10.1016/0146-3535(89)90022-1
{"title":"Recent advances in x-ray characterization of materials — II","authors":"","doi":"10.1016/0146-3535(89)90022-1","DOIUrl":"10.1016/0146-3535(89)90022-1","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"18 ","pages":"Page vii"},"PeriodicalIF":0.0,"publicationDate":"1989-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(89)90022-1","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74866724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Recent advances in III–V compounds on silicon 硅基III-V类化合物的研究进展
Progress in Crystal Growth and Characterization Pub Date : 1989-01-01 DOI: 10.1016/0146-3535(89)90010-5
M. Razeghi
{"title":"Recent advances in III–V compounds on silicon","authors":"M. Razeghi","doi":"10.1016/0146-3535(89)90010-5","DOIUrl":"10.1016/0146-3535(89)90010-5","url":null,"abstract":"<div><p>The performance of photonic and electronic devices fabricated with III–V compounds on silicon substrate has advanced to the degree that this technology may be considered for device applications. In this paper, the recent advances on the growth, characterization, and applications of III–V compounds on Si substrates using low pressure metalorganic chemical vapor deposition growth technique are presented.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"19 1","pages":"Pages 21-37"},"PeriodicalIF":0.0,"publicationDate":"1989-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(89)90010-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80579245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Materials for optoelectronic and photonic integrated circuits 光电与光子集成电路材料
Progress in Crystal Growth and Characterization Pub Date : 1989-01-01 DOI: 10.1016/0146-3535(89)90009-9
I.D. Henning
{"title":"Materials for optoelectronic and photonic integrated circuits","authors":"I.D. Henning","doi":"10.1016/0146-3535(89)90009-9","DOIUrl":"10.1016/0146-3535(89)90009-9","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"19 1","pages":"Pages 1-20"},"PeriodicalIF":0.0,"publicationDate":"1989-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(89)90009-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73587519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
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