Progress in Crystal Growth and Characterization最新文献

{"title":"Extrinsic doping of CdxHg1−xTe— A review","authors":"P. Capper","doi":"10.1016/0146-3535(89)90003-8","DOIUrl":"https://doi.org/10.1016/0146-3535(89)90003-8","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"17 1","pages":"295-337"},"PeriodicalIF":0.0,"publicationDate":"1989-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78028937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reaction mechanisms in OMVPE growth of GaAs determined using D2 labelling experiments","authors":"G.B. Stringfellow","doi":"10.1016/0146-3535(89)90017-8","DOIUrl":"10.1016/0146-3535(89)90017-8","url":null,"abstract":"<div><p>Reaction mechanisms in the organometallic vapor phase epitaxial (OMVPE) growth of GaAs using TMGa combined with either AsH₃ or tertiarybutylarsine (TBAs) are reviewed. The pyrolysis of each constituent in various ambients is discussed followed by a discussion of the combined systems used for actual GaAs growth.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"19 1","pages":"Pages 115-123"},"PeriodicalIF":0.0,"publicationDate":"1989-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(89)90017-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84513961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"X-ray scattering from point defect aggregates in single crystals","authors":"Krishan Lal","doi":"10.1016/0146-3535(89)90029-4","DOIUrl":"10.1016/0146-3535(89)90029-4","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"18 ","pages":"Pages 227-266"},"PeriodicalIF":0.0,"publicationDate":"1989-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(89)90029-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72858925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"New device concepts: The implications for MOVPE","authors":"J.L. Beeby","doi":"10.1016/0146-3535(89)90016-6","DOIUrl":"10.1016/0146-3535(89)90016-6","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"19 1","pages":"Pages 107-114"},"PeriodicalIF":0.0,"publicationDate":"1989-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(89)90016-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80000235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The growth and characterization of CdxHg1−xTe (CMT) on GaAs for optical fibre communication devices","authors":"L.M. Smith ,&nbsp;J. Thompson ,&nbsp;P. Mackett ,&nbsp;G.T. Jenkin ,&nbsp;T. Nguyen Duy ,&nbsp;P. Gori ,&nbsp;A. Cetronio ,&nbsp;C. Lanzieri ,&nbsp;G. Moccia","doi":"10.1016/0146-3535(89)90013-0","DOIUrl":"10.1016/0146-3535(89)90013-0","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"19 1","pages":"Pages 63-81"},"PeriodicalIF":0.0,"publicationDate":"1989-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(89)90013-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87150602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The co-existence of multi-component liquid and solid intermediate phases before the hetero-LPE of III–V solid solutions","authors":"Yu.B. Bolkhovityanov","doi":"10.1016/0146-3535(89)90004-X","DOIUrl":"10.1016/0146-3535(89)90004-X","url":null,"abstract":"<div><p>Liquid phase epitaxial growth of III–V solid solutions invariably involves contact between the multi-component saturated or undersaturated liquid and solid phases which are not in thermodynamic equilibrium because either the number of components is different or the composition of the layer to be grown differs from the composition of the underlying layer. The non-equilibrium system must relax to the final equilibrium state through some intermediate ones.</p><p>The main point of the present review is to show that all non-equilibrium systems encounted in hetero-LPE come through the following stages of relaxation: </p><ul><li><span>1.</span><span><p>1. Partial dissolution of the solid with simultaneous formation of a thin diffusive dividing layer (0.5–3 nm thick) (DDL) at the solid/liquid interface (in the subsurface region of the solid). The layer contains all the components of the given system and in some cases the quasi-equilibrium between the saturaed multi-component liquid and the solid diffusive dividing layer can be observed experimentally. If the DDL is mismatched to the substrate the former must be strained. So, the Gibbs potential of the solid increased additionally and the liquid must become supersaturated by additionally dissolving the substrate.</p></span></li><li><span>2.</span><span><p>2. The nucleation and the growth of centres of a new phase at some points on the solid/liquid interface with the simultaneous dissolution of the solid at other areas of the same interface (mechanism of “etch-back and regrowth”).</p></span></li><li><span>3.</span><span><p>3. The formation of a continuous epitaxial dividing layer (EDL), separating a bulk solid from a multi-component liquid. At this stage the system stratifies into a three-layer configuration: multi-component liquid/EDL/substrate, further relaxation is limited by a solid state diffusion.</p></span></li></ul><p>It is only during dedicated experiments on selected systems that stages 1 to 3 can be observed separately in their more or less pure form. Usually, the first and the second stages almost escape experimental detection due to an enormous variability in time scales and an inherent randomness of events during the “fast” stage 2. So, in practice the varied combination of relaxation modes is observed. It is, however, true that, among many parameters which influence the mode of non-equilibrium solid/liquid interface relaxation, the most critical are the temperature of isothermal contact between liquid and solid phases and the lattice mismatch between a substrate and a new solid phase. This concerns not only the magnitude of the mismatch but its sign as well.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"19 3","pages":"Pages 159-187"},"PeriodicalIF":0.0,"publicationDate":"1989-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(89)90004-X","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89412283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Materials for optoelectronic and photonic integrated circuits","authors":"I.D. Henning","doi":"10.1016/0146-3535(89)90009-9","DOIUrl":"10.1016/0146-3535(89)90009-9","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"19 1","pages":"Pages 1-20"},"PeriodicalIF":0.0,"publicationDate":"1989-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(89)90009-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73587519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"III–V alloys and their potential for visible emitter applications","authors":"J.P. André,&nbsp;E. Augarde,&nbsp;E. Dupont-Nivet,&nbsp;J.N. Patillon,&nbsp;P. Riglet,&nbsp;N. Mariel,&nbsp;D. Moroni,&nbsp;A. Valster","doi":"10.1016/0146-3535(89)90015-4","DOIUrl":"10.1016/0146-3535(89)90015-4","url":null,"abstract":"<div><p>Atmospheric pressure organometallic vapor phase epitaxy is used for the growth of GaInP-AlGaInP lattice matched to GaAs substrate. The investigation of the GaInP/GaAs heterostructure has been carried out and mobility as high as 75 000 cm² V^-1s^-1 for a sheet carrier concentration of 7.5 10¹¹ cm^-2 has been measured by Shubnikov-de Haas at 4 K. Red and yellow LED's have been obtained with emission wavelength of 670 nm and 576 nm respectively. Oxide stripe laser emitting at 660 nm in pulsed mode have been performed and present a threshold current density of 5 kA cm^-2. Three ridge waveguide laser diode arrays with maximum output power of 108 mW have also been achieved.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"19 1","pages":"Pages 97-105"},"PeriodicalIF":0.0,"publicationDate":"1989-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(89)90015-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86098200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Very uniform epitaxy","authors":"A. Mircea ,&nbsp;A. Ougazzaden ,&nbsp;R. Mellet","doi":"10.1016/0146-3535(89)90011-7","DOIUrl":"10.1016/0146-3535(89)90011-7","url":null,"abstract":"<div><p>A comprehensive evaluation of the T-shaped reactor, in view of its use as a production tool for 1300 nm optoelectronic devices, was carried out. The material obtained was of excellent quality and exhibited a very high degree of uniformity and good reproducibility, despite the difficulties associated with the control of two composition ratios, particularly with the As/P one. The extension to other compositions is obvious. Ternary and quasi-ternary materials ( InGaAs, InGaAlAs ) can be handled with even greater ease, not to speak about binaries and quasi-binaries ( GaAs, GaAlAs ). The system lends itself naturally to extension toward larger wafer sizes. A multi-wafer system based on the same principles can also be implemented ; very recently, such a system was proposed by Frijlink [16].</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"19 1","pages":"Pages 39-49"},"PeriodicalIF":0.0,"publicationDate":"1989-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(89)90011-7","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76355115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The characterization of modulated structures via their diffraction patterns","authors":"R.L. Withers","doi":"10.1016/0146-3535(89)90027-0","DOIUrl":"10.1016/0146-3535(89)90027-0","url":null,"abstract":"<div><p>The existence of a modulated structure is signified in reciprocal space by the existence of weak extra features in addition to the strong Bragg reflections of the unmodulated parent structures. These weak extra features may be sharp incommensurate satellite reflections and/or a diffuse intensity distribution. The extraction of information as regards the character of such modulated structures from a study of their diffraction patterns is reviewed. In Section 2, the structural parameters defining the deviation of modulated structures from their corresponding parent phases is discussed. In Section 3, the observation and interpretation of satellite extinction conditions is discussed. In Section 4 and 5, the qualitative features often present in the diffraction patterns of modulated structures are related to structure factor expressions.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"18 ","pages":"Pages 139-204"},"PeriodicalIF":0.0,"publicationDate":"1989-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(89)90027-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76005400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}