Reaction mechanisms in OMVPE growth of GaAs determined using D2 labelling experiments

Abstract

Reaction mechanisms in the organometallic vapor phase epitaxial (OMVPE) growth of GaAs using TMGa combined with either AsH₃ or tertiarybutylarsine (TBAs) are reviewed. The pyrolysis of each constituent in various ambients is discussed followed by a discussion of the combined systems used for actual GaAs growth.