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Progress in Crystal Growth and Characterization最新文献

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A numerical description of the CdHgTe phase diagram Cd的数值描述HgTe相图
Progress in Crystal Growth and Characterization Pub Date : 1986-01-01 DOI: 10.1016/0146-3535(86)90025-0
J.C. Brice
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引用次数: 33
Crystal growth processes 晶体生长过程
Progress in Crystal Growth and Characterization Pub Date : 1986-01-01 DOI: 10.1016/0146-3535(86)90021-3
Brian Pamplin
{"title":"Crystal growth processes","authors":"Brian Pamplin","doi":"10.1016/0146-3535(86)90021-3","DOIUrl":"10.1016/0146-3535(86)90021-3","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"13 3","pages":"Page 231"},"PeriodicalIF":0.0,"publicationDate":"1986-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(86)90021-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"107306071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A report on the eighth international conference on crystal growth 第八届晶体生长国际会议报告
Progress in Crystal Growth and Characterization Pub Date : 1986-01-01 DOI: 10.1016/0146-3535(86)90027-4
Wang Hong, B.R. Pamplin
{"title":"A report on the eighth international conference on crystal growth","authors":"Wang Hong,&nbsp;B.R. Pamplin","doi":"10.1016/0146-3535(86)90027-4","DOIUrl":"10.1016/0146-3535(86)90027-4","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"13 1","pages":"Pages 77-81"},"PeriodicalIF":0.0,"publicationDate":"1986-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(86)90027-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78889501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Implanted silicon epitaxy by thermal and laser processing 热和激光加工植入硅外延
Progress in Crystal Growth and Characterization Pub Date : 1986-01-01 DOI: 10.1016/0146-3535(86)90007-9
Salvatore Ugo Campisano
{"title":"Implanted silicon epitaxy by thermal and laser processing","authors":"Salvatore Ugo Campisano","doi":"10.1016/0146-3535(86)90007-9","DOIUrl":"10.1016/0146-3535(86)90007-9","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"12 1","pages":"Pages 67-95"},"PeriodicalIF":0.0,"publicationDate":"1986-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(86)90007-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77831294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization and kinetics of AlxGa1−xAs by organometallic-CVD AlxGa1−xAs的有机金属- cvd表征及动力学
Progress in Crystal Growth and Characterization Pub Date : 1986-01-01 DOI: 10.1016/0146-3535(86)90010-9
Hari Prakash
{"title":"Characterization and kinetics of AlxGa1−xAs by organometallic-CVD","authors":"Hari Prakash","doi":"10.1016/0146-3535(86)90010-9","DOIUrl":"10.1016/0146-3535(86)90010-9","url":null,"abstract":"<div><p>Al<sub>x</sub>Ga<sub>1−<em>x</em></sub>As is an important III–V semiconductor for device applications in the optoelectronics field. Growth aspects, characterization and kinetics of Al<sub>x</sub>Ga<sub>1−<em>x</em></sub>As by organometallic - CVD are reviewed. The review primarily covers the effect of growth parameters on material preparation and material quality, doping, electronic and optical properties, and applications to devices and associated problems with their performance. Current problems of PPC centers, D.X centers, and deep level characterization in relation to the basic chemistry of the material and implications on device performance are dealt with. Growth and characterizations of exotic multilayer structures (superlattices, cascades, multiple quantum well structures, etc.) are reported in terms of current specific problems. The future of crystal growth methods employing the organometallics is assessed in relation to the current and future technologies.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"12 1","pages":"Pages 243-256"},"PeriodicalIF":0.0,"publicationDate":"1986-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(86)90010-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80345085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
X-ray topographic studies in the peoples Republic of China 中华人民共和国的x射线地形学研究
Progress in Crystal Growth and Characterization Pub Date : 1986-01-01 DOI: 10.1016/0146-3535(86)90026-2
S.S. Hsu, B.K. Tanner
{"title":"X-ray topographic studies in the peoples Republic of China","authors":"S.S. Hsu,&nbsp;B.K. Tanner","doi":"10.1016/0146-3535(86)90026-2","DOIUrl":"10.1016/0146-3535(86)90026-2","url":null,"abstract":"<div><p>X-ray topographic studies of crystal perfection over the past two decades in the People's Republic of China are outlined. Those papers published in Chinese Journals and in the Chinese language are reviewed and a summary of instrumentation and research groups presently active is presented.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"13 1","pages":"Pages 63-75"},"PeriodicalIF":0.0,"publicationDate":"1986-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(86)90026-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86141965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Magnetic properties of layer AB2X4 compounds AB2X4层化合物的磁性能
Progress in Crystal Growth and Characterization Pub Date : 1986-01-01 DOI: 10.1016/0146-3535(86)90032-8
S. Viticoli
{"title":"Magnetic properties of layer AB2X4 compounds","authors":"S. Viticoli","doi":"10.1016/0146-3535(86)90032-8","DOIUrl":"10.1016/0146-3535(86)90032-8","url":null,"abstract":"<div><p>The magnetic properties of layer AB<sub>2</sub>X<sub>4</sub> compounds, having a ZnIn<sub>2</sub>S<sub>4</sub>-type structure, are discussed considering them as possible models for two-dimensional magnetic systems. MnAL<sub>2</sub>S<sub>4</sub>, MnAL<sub>2</sub>Se<sub>4</sub> and FeGa<sub>2</sub>S<sub>4</sub> do not appear to be good model systems because the magnetic ions are distributed among tetrahedral as well as octahedral sites of the structure. Their magnetic properties are better understood in terms of short-range magnetic order arising from the presence of isolated clusters. The magnetic behaviour of Co <sub>.46</sub>Zn <sub>.54</sub>In<sub>2</sub>S<sub>4</sub>, crystallizing in space group R3m, can be explained in the same way.</p><p>Only in CrGa<sub>1.67</sub>S<sub>4</sub> do the magnetic Cr<sup>3+</sup> ions lie in a triangular planar lattice and, therefore, the magnetic properties are interpreted in terms of a 2-d magnetic system in the temperature range 80 ⩽ T ⩽ 300K.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"13 2","pages":"Pages 105-120"},"PeriodicalIF":0.0,"publicationDate":"1986-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(86)90032-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72916905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Gas source molecular beam epitaxy of InP, GaInAs and GaInAsP InP、GaInAs和GaInAsP的气源分子束外延
Progress in Crystal Growth and Characterization Pub Date : 1986-01-01 DOI: 10.1016/0146-3535(86)90004-3
M.B. Panish
{"title":"Gas source molecular beam epitaxy of InP, GaInAs and GaInAsP","authors":"M.B. Panish","doi":"10.1016/0146-3535(86)90004-3","DOIUrl":"10.1016/0146-3535(86)90004-3","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"12 1","pages":"Pages 1-28"},"PeriodicalIF":0.0,"publicationDate":"1986-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(86)90004-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90078665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
Silicon molecular beam epitaxy 硅分子束外延
Progress in Crystal Growth and Characterization Pub Date : 1986-01-01 DOI: 10.1016/0146-3535(86)90006-7
Yasuhiro Shiraki
{"title":"Silicon molecular beam epitaxy","authors":"Yasuhiro Shiraki","doi":"10.1016/0146-3535(86)90006-7","DOIUrl":"https://doi.org/10.1016/0146-3535(86)90006-7","url":null,"abstract":"<div><p>Work on silicon molecular beam epitaxy (Si-MBE) is now growing on a worldwide scale and various aspects of this work are here reviewed. Basic studies on surface cleaning and defect evaluation have been conducted to improve epitaxy and homoepitaxy and doping have been certified to be comparable or exceed those of conventional CVB epitaxial layers. Formation of doping superlattices is a prime example demonstrating the potential of Si-MBE over conventional growth techniques. Heteroepitaxy including combinations such as silicon/insulator and silicon/metal (silicide) has become an active and growing field for both basic research and device development.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"12 1","pages":"Pages 45-66"},"PeriodicalIF":0.0,"publicationDate":"1986-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(86)90006-7","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136804426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MOCVD AlxGa1−xAs solar cells MOCVD AlxGa1−xAs太阳能电池
Progress in Crystal Growth and Characterization Pub Date : 1986-01-01 DOI: 10.1016/0146-3535(86)90011-0
Hari Prakash
{"title":"MOCVD AlxGa1−xAs solar cells","authors":"Hari Prakash","doi":"10.1016/0146-3535(86)90011-0","DOIUrl":"10.1016/0146-3535(86)90011-0","url":null,"abstract":"<div><p>MOCVD Al<sub>x</sub>Ga<sub>1−<em>x</em></sub>As solar cells are reviewed. A summary status report of the past three year's research is presented. Status of the MOCVD crystal growth technology in relation to the optimization of the Al<sub>x</sub>Ga<sub>1−<em>x</em></sub>As solar cells is assessed. Device characteristics, their structural and material parameters and problems are given. Directions for future research for improving the conversion efficiencies of these solar cells in terms of the material quality improvement and the structural innovation are given.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"12 1","pages":"Pages 257-264"},"PeriodicalIF":0.0,"publicationDate":"1986-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(86)90011-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78336022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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