{"title":"InGaAs/InP和AiGaInAs/InP结构的LPE生长","authors":"Kazuo Nakajima","doi":"10.1016/0146-3535(86)90008-0","DOIUrl":null,"url":null,"abstract":"<div><p>General studies for liquid phase epitaxial (LPE) growth of InGaAs layers on InP substrates are described; i.e. experimental determination and calculation of the In-Ga-As ternary phase diagram, LPE growth conditions for the growth of lattice-matched In<sub>0.53</sub>Ga<sub>0.47</sub>As layers on InP substrates, substrate orientation dependence of distribution coefficients and growth rate, growth conditions to obtain misfit dislocation-free InGaAs layers and behavior of misfit dislocations, growth conditions to obtain high-purity InGaAs layers, the direct growth of InP on InGaAs layers using (111)A oriented substrates, and application of LPE grown InGaAs for avalanche photodiodes. As a topic of LPE growth of InGaAs/InP, a new method to supply solute elements, Ga and As, in growth solutions for the purpose of growth of very thick InGaAs layers is demonstrated.</p><p>The LPE growth of AlGaInAs layers on InP substrates is also described; i.e. calculated results of the Al-Ga-In-As quaternary phase diagram, LPE growth conditions for the growth of lattice-matched Al<sub>0.48</sub>In<sub>0.52</sub>As and AlGaInAs layers on InP substrates, substrate orientation dependence of surface morphology of the LPE layers, growth rate of Al<sub>0.48</sub>In<sub>0.52</sub>As and AlGaInAs, growth of heterostructures, and electrical and optical properties of Al<sub>0.48</sub>In<sub>0.52</sub>As and AlGaInAs layers.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"12 1","pages":"Pages 97-213"},"PeriodicalIF":0.0000,"publicationDate":"1986-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(86)90008-0","citationCount":"1","resultStr":"{\"title\":\"LPE growth of InGaAs/InP and AiGaInAs/InP structures\",\"authors\":\"Kazuo Nakajima\",\"doi\":\"10.1016/0146-3535(86)90008-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>General studies for liquid phase epitaxial (LPE) growth of InGaAs layers on InP substrates are described; i.e. experimental determination and calculation of the In-Ga-As ternary phase diagram, LPE growth conditions for the growth of lattice-matched In<sub>0.53</sub>Ga<sub>0.47</sub>As layers on InP substrates, substrate orientation dependence of distribution coefficients and growth rate, growth conditions to obtain misfit dislocation-free InGaAs layers and behavior of misfit dislocations, growth conditions to obtain high-purity InGaAs layers, the direct growth of InP on InGaAs layers using (111)A oriented substrates, and application of LPE grown InGaAs for avalanche photodiodes. As a topic of LPE growth of InGaAs/InP, a new method to supply solute elements, Ga and As, in growth solutions for the purpose of growth of very thick InGaAs layers is demonstrated.</p><p>The LPE growth of AlGaInAs layers on InP substrates is also described; i.e. calculated results of the Al-Ga-In-As quaternary phase diagram, LPE growth conditions for the growth of lattice-matched Al<sub>0.48</sub>In<sub>0.52</sub>As and AlGaInAs layers on InP substrates, substrate orientation dependence of surface morphology of the LPE layers, growth rate of Al<sub>0.48</sub>In<sub>0.52</sub>As and AlGaInAs, growth of heterostructures, and electrical and optical properties of Al<sub>0.48</sub>In<sub>0.52</sub>As and AlGaInAs layers.</p></div>\",\"PeriodicalId\":101046,\"journal\":{\"name\":\"Progress in Crystal Growth and Characterization\",\"volume\":\"12 1\",\"pages\":\"Pages 97-213\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0146-3535(86)90008-0\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Progress in Crystal Growth and Characterization\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0146353586900080\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Crystal Growth and Characterization","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0146353586900080","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
LPE growth of InGaAs/InP and AiGaInAs/InP structures
General studies for liquid phase epitaxial (LPE) growth of InGaAs layers on InP substrates are described; i.e. experimental determination and calculation of the In-Ga-As ternary phase diagram, LPE growth conditions for the growth of lattice-matched In0.53Ga0.47As layers on InP substrates, substrate orientation dependence of distribution coefficients and growth rate, growth conditions to obtain misfit dislocation-free InGaAs layers and behavior of misfit dislocations, growth conditions to obtain high-purity InGaAs layers, the direct growth of InP on InGaAs layers using (111)A oriented substrates, and application of LPE grown InGaAs for avalanche photodiodes. As a topic of LPE growth of InGaAs/InP, a new method to supply solute elements, Ga and As, in growth solutions for the purpose of growth of very thick InGaAs layers is demonstrated.
The LPE growth of AlGaInAs layers on InP substrates is also described; i.e. calculated results of the Al-Ga-In-As quaternary phase diagram, LPE growth conditions for the growth of lattice-matched Al0.48In0.52As and AlGaInAs layers on InP substrates, substrate orientation dependence of surface morphology of the LPE layers, growth rate of Al0.48In0.52As and AlGaInAs, growth of heterostructures, and electrical and optical properties of Al0.48In0.52As and AlGaInAs layers.
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