Memories - Materials, Devices, Circuits and Systems最新文献

{"title":"Device-circuit co-design of memristor-based on niobium oxide for large-scale crossbar memory","authors":"Avinash Kumar Gupta,&nbsp;Mani Shankar Yadav,&nbsp;Brajesh Rawat","doi":"10.1016/j.memori.2023.100080","DOIUrl":"https://doi.org/10.1016/j.memori.2023.100080","url":null,"abstract":"<div><p>Memristor-based crossbar architecture emerges as a promising candidate for 3-D memory and neuromorphic computing. However, the sneak current through the unselected cells becomes a fundamental roadblock to their development, resulting in misreading and high power consumption. In this regard, we theoretically investigate the Pt/Ti/NbO₂/Nb<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>5</mn><mo>−</mo><mi>x</mi></mrow></msub></math></span>/Pt-based self-selective memristor, which combines the inherent nonlinearity of the NbO₂ switching layer and the non-volatile operation of the Nb<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>5</mn><mo>−</mo><mi>x</mi></mrow></msub></math></span> memory layer in a single device. The results show that the Pt/Ti/NbO₂/Nb<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>5</mn><mo>−</mo><mi>x</mi></mrow></msub></math></span>/Pt-based self-selective memristor offers the sneak current of 310 nA, selectivity of around 174, and on/off current ratio of 75, compared to the sneak current of approximately 70 <span><math><mi>μ</mi></math></span>A, selectivity of about 4.02, and on/off current ratio of around 1.55 for the Pt/Ti/Nb<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>5</mn><mo>−</mo><mi>x</mi></mrow></msub></math></span>/Pt-based memristor device. Our self-selective memristor minimizes the sneak current, but a small on/off current ratio limits their readout margin and power efficiency for crossbar array size greater than 4KB. Further, we demonstrate that breaking down a large-scale crossbar array into smaller subarrays and separating them by transistor switches, called the split crossbar array, is a more efficient way of achieving a practical size crossbar array with improved readout margin and power efficiency. Our results shed light on the potential of the Pt/Ti/NbO₂/Nb<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>5</mn><mo>−</mo><mi>x</mi></mrow></msub></math></span>/Pt-based self-selective memristor and explore the split crossbar array architecture as a practical solution to augment readout margins and power efficiency in a large-scale crossbar array.</p></div>","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"5 ","pages":"Article 100080"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50193733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimizing free layer of Magnetic Tunnel Junction for true random number generator","authors":"Alisha P.B.,&nbsp;Dr. Tripti S Warrier","doi":"10.1016/j.memori.2023.100075","DOIUrl":"https://doi.org/10.1016/j.memori.2023.100075","url":null,"abstract":"<div><p>True random number generators (TRNGs) should ideally generate lengthy chains of non-repeating, uncorrelated bit-streams that are efficient in terms of both energy and area. Current TRNG designs include source of randomness such as CMOS or non-volatile memory based devices with additional circuitry to improve the quality of randomness leading to power and area overhead. This paper addresses these issues by improving the randomness of the Spin-Orbit Torque (SOT)-Magnetic Tunnel Junction cell. Motivated by the observation that free layer thickness of Magnetic Tunnel Junction (MTJ) can be scaled to design a low-barrier device, the paper proposes a novel source of randomness called <span><math><mi>Δ</mi></math></span>SOT. This device is then used to design TRNG circuits that achieves high quality random telegraphic switching behavior without any additional circuitry making it suitable for ultra-low power applications. Evaluations show that <span><math><mi>Δ</mi></math></span>SOT-TRNG has significant reduction in energy (51%) and area (66%) compared to state-of-the-art MTJ based TRNG design. Furthermore, the work shows that the improved switching speed of the reduced barrier junction can results in 65% increase in throughput compared to MTJ based TRNG design.</p></div>","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"5 ","pages":"Article 100075"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50193737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of irradiation energy and damage coefficient on performance of CH3NH3PI3 photocell","authors":"Cliff Orori Mosiori","doi":"10.1016/j.memori.2023.100074","DOIUrl":"https://doi.org/10.1016/j.memori.2023.100074","url":null,"abstract":"<div><p>An organic–inorganic hybrid perovskite as a light-absorbing layer has become a key material in many laminated-structures used in photon sensing devices. Some of these devices are referred to as Organic–inorganic hybrid perovskite (OIHP)-based devices. In recent days, OIHP applications have sky-rocketed in the world of flexible photo-electronics. Due to the higher radiation tolerances, OIHP-based solar cells have been recommended for terrestrial applications which is an application that require low fabrication costs that combines lightweight materials. However, it has been noticed that when it is used in extra-terrestrial environments, these photo cell devices experience premature failures once they interact with fast multispectral radiations in terrestrial spaces. Due to these premature failures, a similar solar cell from an (OIHP)-based perovskite material of methyl ammonium lead iodide (CH₃NH₃PI₃) was investigated as an observer layer under a multi-spectral simulated illumination. After simulation, data for the expected photocurrent flowing through junction components on a glass substrate coated with a thin layer of Titanium dioxide (TiO ₂) film was obtained. The influence of energy of irradiation on damage coefficients, current density, photovoltage and I–V characteristic profile curves were determined and investigated. Some general common macroscopic parameters for photon sensing were analyzed on three dimensions (3D) to determining the minority charge carriers and their induced photo-voltages with respect to junction recombination velocities. The obtained computed macroscopic parameters were incorporated into the Quite Universal Circuit Simulator software for simulation. It was established that damage coefficient influenced the I–V curve and an accumulation of charge carriers magnifies the probability of plasmons initiating degradation of the absorber layer. The atoms in the CH₃NH₃Pl₃ crystal lattice system uniformly recoils at resonance and transport the maximum charge carriers across the P-N junction capable of creating a significant damage concentrated within a few micrometer ranges on the surface that may even extend between 0.39 to about 1.01 micrometers in size. This paper therefore evaluates the influence of irradiation energy and damage coefficient in a hybrid CH₃NH₃PI₃ mono-facet crystal structure on exposure to multi-spectral illumination at varied irradiation energies.</p></div>","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"5 ","pages":"Article 100074"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50194258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance analysis of OTFT-based SRAM topologies","authors":"Taniza Marium,&nbsp;S.M. Ishraqul Huq,&nbsp;Oli Lowna Baroi,&nbsp;Md. Shaikh Abrar Kabir,&nbsp;Satyendra N. Biswas","doi":"10.1016/j.memori.2023.100077","DOIUrl":"https://doi.org/10.1016/j.memori.2023.100077","url":null,"abstract":"<div><p>In terms of mechanical flexibility, organic SRAM offers better designs and a commercially feasible option with the ability to deliver acceptable performance. This paper investigates the implementation of different SRAM topologies based on organic thin film transistors (OTFTs). In this work, a compact spice model is used to simulate pOTFT and nOTFT in LTSpice software. Time delays, power consumption, the power delay product (PDP), and static noise margin (SNM) for read and write operations are calculated, and a comparative analysis of OTFT based 6T, 7T, 8T, and 9T SRAM topologies is performed. Among different topologies, 9T OTFT SRAM cell achieves a 1.67× increase in SNM, compared to conventional 6T OTFT-based SRAM cell. The highest figure of merit value of 9T SRAM cell indicates its suitability for various applications.</p></div>","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"5 ","pages":"Article 100077"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50193734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Guest Editorial : 26th International Symposium on VLSI Design and Test 2022","authors":"Ambika Prasad Shah ,&nbsp;Bhupendra Singh Reniwal","doi":"10.1016/j.memori.2023.100072","DOIUrl":"https://doi.org/10.1016/j.memori.2023.100072","url":null,"abstract":"","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"5 ","pages":"Article 100072"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50193867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An ultra-thin absorber in microwave range: 50 GHz band-width, absorption over 80 %","authors":"Ilghar Rezaei ,&nbsp;Behnaz Rashidi ,&nbsp;Amir Ali Mohammad Khani ,&nbsp;Toktam Aghaee","doi":"10.1016/j.memori.2023.100063","DOIUrl":"https://doi.org/10.1016/j.memori.2023.100063","url":null,"abstract":"<div><p>An ultra-thin microwave absorber with a 34 GHz bandwidth more than 90% absorption in the frequency range of 33.5 GHz - 67.5 GHz, and 50 GHz bandwidth, more than 80 % absorption is proposed. The functionality of the device was analyzed using an equivalent circuit model (ECM) by exploiting the impedance matching concept in the transmission line theory. By changing the chemical potential of the graphene, following manipulating characteristics of the graphene surface conductivity, can achieve several absorption responses in wideband range frequencies. Additionally, the proposed absorption is stable in a wide range of incident angles. These advantages make the proposed absorption attractive for several applications such as optical sensors and detectors.</p></div>","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"5 ","pages":"Article 100063"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50194255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fault-tolerant reversible logic gate-based RO-PUF design","authors":"Mridula Karmakar ,&nbsp;Syed Farah Naz ,&nbsp;Ambika Prasad Shah","doi":"10.1016/j.memori.2023.100055","DOIUrl":"https://doi.org/10.1016/j.memori.2023.100055","url":null,"abstract":"<div><p>Physically Unclonable Function (PUF) is an emerging modern approach to the security concerns of the physical systems which require the protection of sensitive data. PUF generates unique, reliable, and secure responses which can be utilized for cryptographic applications. In this paper, a fault-tolerant reversible logic gate-based RO PUF is proposed. We utilized a fault-tolerant reversible logic Double Feynman Gate in place of conventional inverters to design the ring oscillators (RO). The proposed RO PUF designs implemented and evaluated on the Basys-3 Artix-7 FPGA board. The PUF parameters such as uniqueness, reliability, and uniformity were analyzed based on the experimental results. The empirical results show that the proposed RO PUF has uniqueness and reliability of 0.49 and 85.95%, respectively. The inter-chip and intra-chip uniqueness for the proposed design is 23% and 25.5%, respectively higher than the conventional RO PUF design. This fault-tolerant reversible logic gate-based RO PUF design shows better uniqueness, reliability, and uniformity than other considered PUF designs.</p></div>","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"4 ","pages":"Article 100055"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50199563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Combustion synthesis and characterization of dysprosium nano-composite melilite","authors":"Cliff Orori Mosiori","doi":"10.1016/j.memori.2023.100042","DOIUrl":"https://doi.org/10.1016/j.memori.2023.100042","url":null,"abstract":"<div><p>Light emitting nano-scale materials have attracted a great interest in recent days. In view of this, a nanocrystal solid luminescent composite material was prepared using combustion processing technique and its identity was analyzed and further investigated. The precursor reagents were measured using the single pan analytical balance. A sample was synthesized and its functional group was identified using the FTIR spectroscopy and XRD studies as having similar properties to those in Batch No. JCPDS No. 77-1149 and in Base Code AMCSD 0008032. Its photoluminescence spectrum identified peaks located at 476 nm, 578 nm and 615 nm that were attributed to electronic transition from ⁴<span><math><msub><mrow><mi>F</mi></mrow><mrow><mi>9/2</mi></mrow></msub></math></span> to ⁶H<span><math><msub><mrow></mrow><mrow><mi>15/2</mi></mrow></msub></math></span>, from ⁴<span><math><msub><mrow><mi>F</mi></mrow><mrow><mi>9/2</mi></mrow></msub></math></span> to ⁶H<span><math><msub><mrow></mrow><mrow><mi>13/2</mi></mrow></msub></math></span> and from ⁴<span><math><msub><mrow><mi>F</mi></mrow><mrow><mi>9/2</mi></mrow></msub></math></span> to ⁶H<span><math><msub><mrow></mrow><mrow><mi>11/2</mi></mrow></msub></math></span> respectively as the finger blue-prints of dysprosium [Dy<span><math><msup><mrow></mrow><mrow><mn>3</mn><mo>+</mo></mrow></msup></math></span>] ion. Its crystalline sizes and strains were calculated using the Debay Scherrer’s equation and analyzed using the UDM model. The findings showed that the prepared sample had a superior homogeneity and further that the Dy<span><math><msup><mrow></mrow><mrow><mn>3</mn><mo>+</mo></mrow></msup></math></span> influenced its formation. The mellite sample was identified to be Ca₂MgSi₂O₇:Dy<span><math><msup><mrow></mrow><mrow><mn>3</mn><mo>+</mo></mrow></msup></math></span>. Further analysis on the sample suggested that was a potential white light emitting luminescent material just like Ca₂MgSi₂O₇:Tb<span><math><msup><mrow></mrow><mrow><mn>3</mn><mo>+</mo></mrow></msup></math></span> phosphor and Sr₂MgSi₂O₇:Dy<span><math><msup><mrow></mrow><mrow><mn>3</mn><mo>+</mo></mrow></msup></math></span> phosphor.</p></div>","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"4 ","pages":"Article 100042"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50199626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A time domain 2D OaA-based convolutional neural networks accelerator","authors":"Rudresh Pratap Singh ,&nbsp;Shreyam Kumar ,&nbsp;Jugal Gandhi ,&nbsp;Diksha Shekhawat ,&nbsp;M. Santosh ,&nbsp;Jai Gopal Pandey","doi":"10.1016/j.memori.2023.100041","DOIUrl":"https://doi.org/10.1016/j.memori.2023.100041","url":null,"abstract":"<div><p>Convolutional neural networks (CNNs) are widely implemented in modern facial recognition systems for image recognition applications. Runtime speed is a critical parameter for real-time systems. Traditional FPGA-based accelerations require either large on-chip memory or high bandwidth and high memory access time that slow down the network. The proposed work uses an algorithm and its subsequent hardware design for a quick CNN computation using an overlap-and-add-based technique in the time domain. In the algorithm, the input images are broken into tiles that can be processed independently without computing overhead in the frequency domain. This also allows for efficient concurrency of the convolution process, resulting in higher throughput and lower power consumption. At the same time, we maintain low on-chip memory requirements necessary for faster and cheaper processor designs. We implemented CNN VGG-16 and AlexNet models with our design on Xilinx Virtex-7 and Zynq boards. The performance analysis of our design provides 48% better throughput than the state-of-the-art AlexNet and uses 68.85% lesser multipliers and other resources than the state-of-the-art VGG-16.</p></div>","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"4 ","pages":"Article 100041"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50199627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hierarchical fuzzy deep learning system for various classes of images","authors":"Shashank Kamthan ,&nbsp;Harpreet Singh","doi":"10.1016/j.memori.2022.100023","DOIUrl":"https://doi.org/10.1016/j.memori.2022.100023","url":null,"abstract":"<div><p>There has been an increasing interest in the development of deep-learning models for the large data processing such as images, audio, or video. Image processing has made breakthroughs in addressing important problems such as genome-wide biological networks, map interactions of genes and proteins, network, etc. With the increase in sophistication of the system, and other areas such as internet of things, social media, web development, etc., the need for classification of image data has been felt more than ever before. It is more important to develop intelligent approaches that can take care of the sophistication of systems. Several researchers are working on the real-time images to solve the problems related to the classification of images. The algorithms to be developed will have to meet the large image datasets. In this paper, the generalized hierarchical fuzzy deep learning approach is discussed and developed to meet such demands. The objective is to design the algorithm for image classification so that it results in high accuracy. The approach is for real-life intelligent systems and the classification results have been shared for large image datasets such as the YaleB database. The accuracy of the algorithm has been obtained for various classes of images using image thresholding. The development of learning algorithms has been validated on corrupted and noisy data and results of various classes of images are presented.</p></div>","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"4 ","pages":"Article 100023"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50200139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}