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High quality InP single crystal from Sumitomo electric 来自住友电气的高品质InP单晶
Euro III-Vs Review Pub Date : 1990-09-01 DOI: 10.1016/0959-3527(90)90199-4
T. Kawase, T. Araki, Y. Miura, T. Iwasaki, N. Yamabayashi, M. Tatsumi, S. Murai, K. Tada, S. Akai
{"title":"High quality InP single crystal from Sumitomo electric","authors":"T. Kawase,&nbsp;T. Araki,&nbsp;Y. Miura,&nbsp;T. Iwasaki,&nbsp;N. Yamabayashi,&nbsp;M. Tatsumi,&nbsp;S. Murai,&nbsp;K. Tada,&nbsp;S. Akai","doi":"10.1016/0959-3527(90)90199-4","DOIUrl":"https://doi.org/10.1016/0959-3527(90)90199-4","url":null,"abstract":"<div><p>InP single crystals are primarily used as the conductive substrates for optical devices such as LEDs and lasers etc, in optoelectronics. Recently, active research for the improvement of MISFET, HEMT, HBT, RHET and OEICs has been demanding the development of a semi-insulating, SI, InP substrate on which these devices can be fabricated. The improvement of quality and reliability of these devices is being vigorously promoted, so high purity and low defect density are required of InP single crystal substrates. At Sumitomo Electric, the LEC method to grow InP single crystals with low defect density has been developed.</p></div>","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 5","pages":"Pages 19-21"},"PeriodicalIF":0.0,"publicationDate":"1990-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90199-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91759898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Microfabrication using focused ion beams 聚焦离子束微细加工
Euro III-Vs Review Pub Date : 1990-09-01 DOI: 10.1016/0959-3527(90)90205-8
Kenji Gamo, Susumu Namba
{"title":"Microfabrication using focused ion beams","authors":"Kenji Gamo,&nbsp;Susumu Namba","doi":"10.1016/0959-3527(90)90205-8","DOIUrl":"https://doi.org/10.1016/0959-3527(90)90205-8","url":null,"abstract":"<div><p>“Soon all semiconductor devices could be made this way” is a claim often made for focussed ion beam technology. As the Osaka University team relate in this overview, numerous labs around the world have used FIB to dope, deposit, etch and define semiconductor, and other, films to microfabricate circuits and devices. FIB has yet to become a routine method but the techniques under this banner hold much promise for the production of next generation devices.</p></div>","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 5","pages":"Pages 41-42"},"PeriodicalIF":0.0,"publicationDate":"1990-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90205-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91767016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A corrlation of chemical & electrical properties of polycrystal & single crystal InP 多晶与单晶InP化学与电学性质的相关性
Euro III-Vs Review Pub Date : 1990-09-01 DOI: 10.1016/0959-3527(90)90202-5
G. Jacob, R. Coquille, Y. Toudic
{"title":"A corrlation of chemical & electrical properties of polycrystal & single crystal InP","authors":"G. Jacob,&nbsp;R. Coquille,&nbsp;Y. Toudic","doi":"10.1016/0959-3527(90)90202-5","DOIUrl":"https://doi.org/10.1016/0959-3527(90)90202-5","url":null,"abstract":"<div><p>In a joint research programme, Metaux Speciaux and CNET Lannion, France, have gained considerable insight into the behaviour of impurities in InP. As a result of a systematic series of chemical and electrical measurements, the growth of SI crystals with a very low concentration of the deep acceptor (Fe) at a level of about 10<sup>16</sup>cm<sup>−3</sup> can now be routinely achieved.</p></div>","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 5","pages":"Pages 28-29"},"PeriodicalIF":0.0,"publicationDate":"1990-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90202-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90124654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Directory 目录
Euro III-Vs Review Pub Date : 1990-09-01 DOI: 10.1016/0959-3527(90)90207-A
{"title":"Directory","authors":"","doi":"10.1016/0959-3527(90)90207-A","DOIUrl":"https://doi.org/10.1016/0959-3527(90)90207-A","url":null,"abstract":"","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 5","pages":"Page 47"},"PeriodicalIF":0.0,"publicationDate":"1990-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90207-A","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90124655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Profiling of compound semiconductors using point contact techniques: Part 2 使用点接触技术的化合物半导体剖面:第2部分
Euro III-Vs Review Pub Date : 1990-09-01 DOI: 10.1016/0959-3527(90)90203-6
R.J. Hillard, H.L. Berkowitz, J.M. Heddleson, R.G. Mazur, P. Rai-Choudhury
{"title":"Profiling of compound semiconductors using point contact techniques: Part 2","authors":"R.J. Hillard,&nbsp;H.L. Berkowitz,&nbsp;J.M. Heddleson,&nbsp;R.G. Mazur,&nbsp;P. Rai-Choudhury","doi":"10.1016/0959-3527(90)90203-6","DOIUrl":"10.1016/0959-3527(90)90203-6","url":null,"abstract":"<div><p>In the first part of this two part article by Solid State Measurements, Inc., Pittsburgh, PA, USA, the point contact current voltage (PCIV) technique for characterizing III–V semiconductors was introduced. This technique involves stepping specially conditioned point contacts down a beveled surface into the sample. The SSM 350 III–V and Silicon Characterization System is a computer controlled, automatic profiling system for silicon, germanium, and III–V, II–VI, and IV–IV binary and ternary compound semiconductor systems.</p></div>","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 5","pages":"Pages 31-33"},"PeriodicalIF":0.0,"publicationDate":"1990-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90203-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87669431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Picogiga — Our expertise at your service Picogiga -我们的专业知识为您服务
Euro III-Vs Review Pub Date : 1990-08-01 DOI: 10.1016/0959-3527(90)90117-C
T. Kerr
{"title":"Picogiga — Our expertise at your service","authors":"T. Kerr","doi":"10.1016/0959-3527(90)90117-C","DOIUrl":"10.1016/0959-3527(90)90117-C","url":null,"abstract":"","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 4","pages":"Pages 24-25"},"PeriodicalIF":0.0,"publicationDate":"1990-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90117-C","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75912851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
University of California at San Diego hosts MBE-VI 加州大学圣地亚哥分校主办MBE-VI
Euro III-Vs Review Pub Date : 1990-08-01 DOI: 10.1016/0959-3527(90)90112-7
Charles Tu (Prof.)
{"title":"University of California at San Diego hosts MBE-VI","authors":"Charles Tu (Prof.)","doi":"10.1016/0959-3527(90)90112-7","DOIUrl":"10.1016/0959-3527(90)90112-7","url":null,"abstract":"","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 4","pages":"Page 16"},"PeriodicalIF":0.0,"publicationDate":"1990-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90112-7","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77128747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Planetary MOVPE multiwafer production with MBE quality 具有MBE质量的行星式MOVPE多晶片生产
Euro III-Vs Review Pub Date : 1990-08-01 DOI: 10.1016/0959-3527(90)90127-F
Reinhard Kalla (Marketing Manager, Aixtron GmbH)
{"title":"Planetary MOVPE multiwafer production with MBE quality","authors":"Reinhard Kalla (Marketing Manager, Aixtron GmbH)","doi":"10.1016/0959-3527(90)90127-F","DOIUrl":"10.1016/0959-3527(90)90127-F","url":null,"abstract":"","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 4","pages":"Page 49"},"PeriodicalIF":0.0,"publicationDate":"1990-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90127-F","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"101400811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Riber's largest mono CMT epilayer ever grown by MBE 里伯最大的单CMT脱毛器曾由MBE生长
Euro III-Vs Review Pub Date : 1990-08-01 DOI: 10.1016/0959-3527(90)90113-8
{"title":"Riber's largest mono CMT epilayer ever grown by MBE","authors":"","doi":"10.1016/0959-3527(90)90113-8","DOIUrl":"https://doi.org/10.1016/0959-3527(90)90113-8","url":null,"abstract":"","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 4","pages":"Page 17"},"PeriodicalIF":0.0,"publicationDate":"1990-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90113-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"137257533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ESPRIT project 263 InP-basd integrated optoelectronics final meeting in Brussels, 23rd March 1990 ESPRIT项目263基于inp的集成光电子学最终会议于1990年3月23日在布鲁塞尔举行
Euro III-Vs Review Pub Date : 1990-08-01 DOI: 10.1016/0959-3527(90)90116-B
S.W. Bland
{"title":"ESPRIT project 263 InP-basd integrated optoelectronics final meeting in Brussels, 23rd March 1990","authors":"S.W. Bland","doi":"10.1016/0959-3527(90)90116-B","DOIUrl":"10.1016/0959-3527(90)90116-B","url":null,"abstract":"","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 4","pages":"Page 22"},"PeriodicalIF":0.0,"publicationDate":"1990-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90116-B","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78498978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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