Euro III-Vs ReviewPub Date : 1990-11-01DOI: 10.1016/0959-3527(90)90174-R
Jim Turner MBE, David Smith
{"title":"Plessey GaAs lives on -","authors":"Jim Turner MBE, David Smith","doi":"10.1016/0959-3527(90)90174-R","DOIUrl":"10.1016/0959-3527(90)90174-R","url":null,"abstract":"<div><p>The Plessey GaAs Foundry Process is based on proven, reliable technology with the greatest emphasis placed on manufacturability, reproducibility and yield. Since the introduction of commercial processes in 1985, Plessey has maintained a policy of enhancement and updating rather than replacement as new processes become available. For example, usable frequency limits have been pushed from 12GHz to 14GHz and now to 20GHz with 0.5μm technology and via holes. This policy will continue in the future. Advanced processes have been developed, for example, for the generation of many watts of mean power from a MMIC. A HEMT has also been demonstrated and this will form the core technology for the forthcoming Plessey F40 process which will operate at 40GHz.</p></div>","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 6","pages":"Pages 20-22"},"PeriodicalIF":0.0,"publicationDate":"1990-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90174-R","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88409531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Euro III-Vs ReviewPub Date : 1990-11-01DOI: 10.1016/0959-3527(90)90172-P
Adrian Hill, John Bridge, Peter Ladbrooke
{"title":"Finding the average GaAs MESFET among the spreads","authors":"Adrian Hill, John Bridge, Peter Ladbrooke","doi":"10.1016/0959-3527(90)90172-P","DOIUrl":"10.1016/0959-3527(90)90172-P","url":null,"abstract":"<div><p>FET-based MMICs and MICs are usually designed around a fixed FET which is intended to be typical of the process which it represents. This article addresses the question of whether the electrical characteristics of a technologically mean device are the same as those of devices obtained by averaging the electrical characteristics of several different devices.</p></div>","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 6","pages":"Pages 16-18"},"PeriodicalIF":0.0,"publicationDate":"1990-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90172-P","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79077231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Euro III-Vs ReviewPub Date : 1990-11-01DOI: 10.1016/0959-3527(90)90183-T
Kenji Gamo, Susumu Namba
{"title":"Microfabrication using focused ion beams part II","authors":"Kenji Gamo, Susumu Namba","doi":"10.1016/0959-3527(90)90183-T","DOIUrl":"10.1016/0959-3527(90)90183-T","url":null,"abstract":"<div><p>Soon all semiconductor devices could be made this way is a claim often made for focused ion beam technology. As the Osaka University team relates in this overview, numerous labs around the world have used FIB to dope, deposit, etch and define semiconductor and other films to microfabricate circuits and devices. FIB has yet to become a routine method but the techniques under this banner hold much promise for the production of next generation devices.</p></div>","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 6","pages":"Pages 47-48"},"PeriodicalIF":0.0,"publicationDate":"1990-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90183-T","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81260501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Euro III-Vs ReviewPub Date : 1990-11-01DOI: 10.1016/0959-3527(90)90176-T
Dennis Powers
{"title":"The State of the GaAs market","authors":"Dennis Powers","doi":"10.1016/0959-3527(90)90176-T","DOIUrl":"10.1016/0959-3527(90)90176-T","url":null,"abstract":"<div><p>The GaAs industry has developed into a viable, profitable industry with excellent growth potential, (much as TriQuint predicted five years ago). GaAs today is accepted by designers as a process with risks similar to state-of-the-art silicon. The fear, uncertainty and doubt have declined significantly in the past year or two, and GaAs is now competing with silicon technology strictly on a performance/price basis.</p></div>","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 6","pages":"Pages 26-27"},"PeriodicalIF":0.0,"publicationDate":"1990-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90176-T","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74571062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Euro III-Vs ReviewPub Date : 1990-11-01DOI: 10.1016/0959-3527(90)90177-U
{"title":"1990 GaAs IC symposium sheraton New Orleans hotel exhibition hall floorplan","authors":"","doi":"10.1016/0959-3527(90)90177-U","DOIUrl":"https://doi.org/10.1016/0959-3527(90)90177-U","url":null,"abstract":"","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 6","pages":"Pages 28-29"},"PeriodicalIF":0.0,"publicationDate":"1990-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90177-U","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138407989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Euro III-Vs ReviewPub Date : 1990-11-01DOI: 10.1016/0959-3527(90)90178-V
Didier Meignant
{"title":"A normally-off process for analogue/digital GaAs ASICs","authors":"Didier Meignant","doi":"10.1016/0959-3527(90)90178-V","DOIUrl":"10.1016/0959-3527(90)90178-V","url":null,"abstract":"<div><p>An enhancement mode process developed by Philips Research Labs is available through foundry service at Philips Microwave Limeil. This process is meant to address not only purely digital circuits, but also low-cost, ultra low power analogue and analogue-digital mixed functions with high integration density. In this article, an integrated GPS front-end, designed and fabricated by PNL/LEP, is described. This 3-chip receiver includes an integrated VCO, amplifiers, a mixer, a phase frequency comparator, a 2-bit ADC, registers and several prescalers. The outstanding performance measured on this system is believed to lead to a drastic price reduction of the RF receiver, compared with an hybrid implementation.</p></div>","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 6","pages":"Pages 31-33"},"PeriodicalIF":0.0,"publicationDate":"1990-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90178-V","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76781029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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