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Euro III-Vs Review最新文献

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Expecting the unexpected & oil, the White Man's Burden? 期待意外&石油，白人的负担?
Euro III-Vs Review Pub Date : 1990-11-01 DOI: 10.1016/0959-3527(90)90169-T
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引用次数: 0
Global markets, openness and co-operation to be emphasised at this year's GaAs IC symposium 今年的GaAs集成电路研讨会将强调全球市场、开放和合作
Euro III-Vs Review Pub Date : 1990-11-01 DOI: 10.1016/0959-3527(90)90173-Q
Michael C. Driver
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引用次数: 0
Serving as GaAs catalysts Arati Prabhakar of DARPA talks to Jo Ann McDonald 作为砷化镓催化剂，DARPA的Arati Prabhakar与Jo Ann McDonald进行了对话
Euro III-Vs Review Pub Date : 1990-11-01 DOI: 10.1016/0959-3527(90)90175-S
Arati Prabhakar
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引用次数: 0
ESPRIT 263B — InP integrated optoelectronics ESPRIT 263B - InP集成光电子学
Euro III-Vs Review Pub Date : 1990-11-01 DOI: 10.1016/0959-3527(90)90179-W
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引用次数: 0
Siemens' laser diodes 西门子的激光二极管
Euro III-Vs Review Pub Date : 1990-11-01 DOI: 10.1016/0959-3527(90)90170-X
{"title":"Siemens' laser diodes","authors":"","doi":"10.1016/0959-3527(90)90170-X","DOIUrl":"https://doi.org/10.1016/0959-3527(90)90170-X","url":null,"abstract":"","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 6","pages":"Page 6"},"PeriodicalIF":0.0,"publicationDate":"1990-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90170-X","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138428051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The ECR etching of GaAs using methane/hydrogen mixtures 甲烷/氢气混合物对砷化镓的ECR腐蚀
Euro III-Vs Review Pub Date : 1990-11-01 DOI: 10.1016/0959-3527(90)90180-2
Steve Osborne, Helen Royal
{"title":"The ECR etching of GaAs using methane/hydrogen mixtures","authors":"Steve Osborne,&nbsp;Helen Royal","doi":"10.1016/0959-3527(90)90180-2","DOIUrl":"10.1016/0959-3527(90)90180-2","url":null,"abstract":"<div><p>There exists an increasing interest in the development of low damage, dry etch processes for III–V materials. For the etching of GaAs, a wide range of gases has been employed, including: Cl<sub>2</sub>, BCl<sub>3</sub>, CCl<sub>4</sub>, SiCl<sub>4</sub>, CCl<sub>2</sub>F<sub>2</sub> with and without various mixtures of O<sub>2</sub>, H<sub>2</sub>, He and Ar. Damage is of particular concern in devices such as MESFETs and HEMTs but it is possible to reduce it by achieving developing etch rate processes (and therefore, shorter etching times) and lower bombardment energies. Oxford Plasma Technology has been involved in the development of CCl<sub>2</sub>F<sub>2</sub>/He etching of GaAs by ECR based on the work of Rebecca Cheung<sup>1</sup> in which the low damage capabilities of ECR etching over RIE were proved.</p></div>","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 6","pages":"Page 38"},"PeriodicalIF":0.0,"publicationDate":"1990-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90180-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78612869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
VCZ growth of high quality InP single crystal part II 高品质InP单晶的VCZ生长(二)
Euro III-Vs Review Pub Date : 1990-11-01 DOI: 10.1016/0959-3527(90)90182-S
T. Kawase, T. Araki, Y. Miura, T. Iwasaki, N. Yamabayashi, M. Tatsumi, S. Murai, K. Tada, S. Akai
{"title":"VCZ growth of high quality InP single crystal part II","authors":"T. Kawase,&nbsp;T. Araki,&nbsp;Y. Miura,&nbsp;T. Iwasaki,&nbsp;N. Yamabayashi,&nbsp;M. Tatsumi,&nbsp;S. Murai,&nbsp;K. Tada,&nbsp;S. Akai","doi":"10.1016/0959-3527(90)90182-S","DOIUrl":"10.1016/0959-3527(90)90182-S","url":null,"abstract":"<div><p>Recently, active research for the improvement of MISFET, HEMT, HBT, RHET and OEICs has demanded development of a semi-insulating InP substrate on which these devices can be fabricated. In the concluding part of this article, we learn of the growth characteristics, such as purity and striation of the Sumitomo VCZ technique. The report then details results obtained from a comparison of VPE InP and InGaAs epilayers grown on VCZ and LEC wafers.</p></div>","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 6","pages":"Pages 44-45"},"PeriodicalIF":0.0,"publicationDate":"1990-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90182-S","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84599895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A dynamic SIMS study of interdiffusion in GaAs/AIAs heterostructures GaAs/AIAs异质结构相互扩散的动态SIMS研究
Euro III-Vs Review Pub Date : 1990-09-01 DOI: 10.1016/0959-3527(90)90198-3
S Hibbert, N Baba-Ali, I Harrison
{"title":"A dynamic SIMS study of interdiffusion in GaAs/AIAs heterostructures","authors":"S Hibbert,&nbsp;N Baba-Ali,&nbsp;I Harrison","doi":"10.1016/0959-3527(90)90198-3","DOIUrl":"https://doi.org/10.1016/0959-3527(90)90198-3","url":null,"abstract":"<div><p>Growth and characterisation of alternating epilayers have renewed interest in self-diffusion studies of III–V compounds. A collaborative project between CSMA Manchester and the University of Nottingham has investigated the extent of interdiffusion as a function of depth across GaAs-AIAs interfaces in MBE epilayers. SIMS and TEM have given direct evidence of a depth dependency and the enhancement of interdiffusion near the surface is believed to be caused by the diffusion of Group III vacancies from the surface.</p></div>","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 5","pages":"Pages 16-17"},"PeriodicalIF":0.0,"publicationDate":"1990-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90198-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91749143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mitsubishi new GaAs FETs & MMICs 三菱新型砷化镓 FET 和 MMIC
Euro III-Vs Review Pub Date : 1990-09-01 DOI: 10.1016/0959-3527(90)90188-Y
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引用次数: 0
Johnson Matthey electronics — a total quality management approach to customer support 庄信万丰电子-全面质量管理的方法来支持客户
Euro III-Vs Review Pub Date : 1990-09-01 DOI: 10.1016/0959-3527(90)90201-4
T. Waldron
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引用次数: 0
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