高品质InP单晶的VCZ生长(二)

Euro III-Vs Review Pub Date : 1990-11-01 DOI:10.1016/0959-3527(90)90182-S

T. Kawase, T. Araki, Y. Miura, T. Iwasaki, N. Yamabayashi, M. Tatsumi, S. Murai, K. Tada, S. Akai

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引用次数: 0

摘要

近年来，对MISFET、HEMT、HBT、RHET和OEICs的改进研究要求开发一种半绝缘的InP衬底，在这种衬底上可以制造这些器件。在本文的结语部分，我们了解了住友VCZ技术的纯度和条纹等生长特性。然后，报告详细介绍了在VCZ和LEC晶圆上生长的VPE InP和InGaAs涂层的比较结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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VCZ growth of high quality InP single crystal part II

Recently, active research for the improvement of MISFET, HEMT, HBT, RHET and OEICs has demanded development of a semi-insulating InP substrate on which these devices can be fabricated. In the concluding part of this article, we learn of the growth characteristics, such as purity and striation of the Sumitomo VCZ technique. The report then details results obtained from a comparison of VPE InP and InGaAs epilayers grown on VCZ and LEC wafers.

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Euro III-Vs Review

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