A dynamic SIMS study of interdiffusion in GaAs/AIAs heterostructures

Abstract

Growth and characterisation of alternating epilayers have renewed interest in self-diffusion studies of III–V compounds. A collaborative project between CSMA Manchester and the University of Nottingham has investigated the extent of interdiffusion as a function of depth across GaAs-AIAs interfaces in MBE epilayers. SIMS and TEM have given direct evidence of a depth dependency and the enhancement of interdiffusion near the surface is believed to be caused by the diffusion of Group III vacancies from the surface.