VCZ growth of high quality InP single crystal part II

Abstract

Recently, active research for the improvement of MISFET, HEMT, HBT, RHET and OEICs has demanded development of a semi-insulating InP substrate on which these devices can be fabricated. In the concluding part of this article, we learn of the growth characteristics, such as purity and striation of the Sumitomo VCZ technique. The report then details results obtained from a comparison of VPE InP and InGaAs epilayers grown on VCZ and LEC wafers.