在分布中找到平均的GaAs MESFET

Adrian Hill, John Bridge, Peter Ladbrooke
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引用次数: 0

摘要

基于FET的mmic和mic通常是围绕一个固定的FET设计的,这个FET是它所代表的典型过程。本文解决的问题是,技术上平均的设备的电气特性是否与通过平均几个不同设备的电气特性获得的设备的电气特性相同。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Finding the average GaAs MESFET among the spreads

FET-based MMICs and MICs are usually designed around a fixed FET which is intended to be typical of the process which it represents. This article addresses the question of whether the electrical characteristics of a technologically mean device are the same as those of devices obtained by averaging the electrical characteristics of several different devices.

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