Profiling of compound semiconductors using point contact techniques: Part 2

Abstract

In the first part of this two part article by Solid State Measurements, Inc., Pittsburgh, PA, USA, the point contact current voltage (PCIV) technique for characterizing III–V semiconductors was introduced. This technique involves stepping specially conditioned point contacts down a beveled surface into the sample. The SSM 350 III–V and Silicon Characterization System is a computer controlled, automatic profiling system for silicon, germanium, and III–V, II–VI, and IV–IV binary and ternary compound semiconductor systems.