{"title":"多晶与单晶InP化学与电学性质的相关性","authors":"G. Jacob, R. Coquille, Y. Toudic","doi":"10.1016/0959-3527(90)90202-5","DOIUrl":null,"url":null,"abstract":"<div><p>In a joint research programme, Metaux Speciaux and CNET Lannion, France, have gained considerable insight into the behaviour of impurities in InP. As a result of a systematic series of chemical and electrical measurements, the growth of SI crystals with a very low concentration of the deep acceptor (Fe) at a level of about 10<sup>16</sup>cm<sup>−3</sup> can now be routinely achieved.</p></div>","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 5","pages":"Pages 28-29"},"PeriodicalIF":0.0000,"publicationDate":"1990-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90202-5","citationCount":"1","resultStr":"{\"title\":\"A corrlation of chemical & electrical properties of polycrystal & single crystal InP\",\"authors\":\"G. Jacob, R. Coquille, Y. Toudic\",\"doi\":\"10.1016/0959-3527(90)90202-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In a joint research programme, Metaux Speciaux and CNET Lannion, France, have gained considerable insight into the behaviour of impurities in InP. As a result of a systematic series of chemical and electrical measurements, the growth of SI crystals with a very low concentration of the deep acceptor (Fe) at a level of about 10<sup>16</sup>cm<sup>−3</sup> can now be routinely achieved.</p></div>\",\"PeriodicalId\":100494,\"journal\":{\"name\":\"Euro III-Vs Review\",\"volume\":\"3 5\",\"pages\":\"Pages 28-29\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0959-3527(90)90202-5\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Euro III-Vs Review\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0959352790902025\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Euro III-Vs Review","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0959352790902025","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A corrlation of chemical & electrical properties of polycrystal & single crystal InP
In a joint research programme, Metaux Speciaux and CNET Lannion, France, have gained considerable insight into the behaviour of impurities in InP. As a result of a systematic series of chemical and electrical measurements, the growth of SI crystals with a very low concentration of the deep acceptor (Fe) at a level of about 1016cm−3 can now be routinely achieved.
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