使用点接触技术的化合物半导体剖面:第2部分

R.J. Hillard, H.L. Berkowitz, J.M. Heddleson, R.G. Mazur, P. Rai-Choudhury
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引用次数: 0

摘要

在这篇由固态测量公司(Solid State Measurements, Inc., Pittsburgh, PA, USA)撰写的两部分文章的第一部分中,介绍了用于表征III-V半导体的点接触电流电压(PCIV)技术。该技术涉及将特殊条件的点接触沿斜面进入样品。SSM 350 III-V和硅表征系统是一种计算机控制的自动分析系统,用于硅,锗和III-V, II-VI和IV-IV二元和三元化合物半导体系统。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Profiling of compound semiconductors using point contact techniques: Part 2

In the first part of this two part article by Solid State Measurements, Inc., Pittsburgh, PA, USA, the point contact current voltage (PCIV) technique for characterizing III–V semiconductors was introduced. This technique involves stepping specially conditioned point contacts down a beveled surface into the sample. The SSM 350 III–V and Silicon Characterization System is a computer controlled, automatic profiling system for silicon, germanium, and III–V, II–VI, and IV–IV binary and ternary compound semiconductor systems.

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