Advanced Energy Conversion最新文献_第8页

Radioisotope-photovoltaic energy conversion system 放射性同位素-光伏能量转换系统

Advanced Energy Conversion Pub Date : 1965-07-01 DOI: 10.1016/0365-1789(65)90029-9

D.G. Gritton, R.C. Bourke

引用次数: 2

Statistisches modell einer gas-diffusionselektrode—II. Der strömungswiderstand 温室气体转接接地…这个阻力

Advanced Energy Conversion Pub Date : 1965-07-01 DOI: 10.1016/0365-1789(65)90032-9

Dietmar R. Proksch, August W. Winsel

引用次数: 3

Technologie und anwendung des peltier-effektes 技术和效应效应的应用

Advanced Energy Conversion Pub Date : 1965-07-01 DOI: 10.1016/0365-1789(65)90028-7

W. Hänlein

{"title":"Technologie und anwendung des peltier-effektes","authors":"W. Hänlein","doi":"10.1016/0365-1789(65)90028-7","DOIUrl":"10.1016/0365-1789(65)90028-7","url":null,"abstract":"<div>The practical application of the Peltier effect has been made possible by the development of suitable thermoelectric semiconductors. The use of bismuth antimonium and bismuth selenium tellurides permits a thermoelectric figure of merit of 0·0030–0·0035 per degree Kelvin. The maximum temperature difference obtaining between the hot and cold junction of industrial thermoelements ranges between 60 and 70°C. These semiconductors are produced by powder metallurgical methods or by melting methods. The powder metallurgical method offers the advantage of freedom in shaping, but the thermoelectric figure of merit obtained is not so high as with the melting method. The latter method is generally restricted to cylindrical shapes, prismatic legs being obtained only by cutting cylindrical bodies. In the construction of heat sinks preference is currently being given to the plate type of construction since it provides mechanical stability and permits locally concentrated heat absorption. The practical use of Peltier cooling units is recommended in cases where low heat absorption capacities are required, i.e. in a range in which compressors with their high cooling capacity and high space requirements cannot be used.</div>","PeriodicalId":100032,"journal":{"name":"Advanced Energy Conversion","volume":"5 2","pages":"Pages 103-106, IN5-IN6, 107-110, IN7-IN8, 111-112, IN9-IN10, 113-114, IN11-IN12, 115-116, IN13-IN14, 117-118"},"PeriodicalIF":0.0,"publicationDate":"1965-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0365-1789(65)90028-7","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85495759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Zum betriebsverhalten elektrodenloser MHD-wandler. Berücksichtigung der endbereiche in längsrichtung 是机器的无氧慢动作。垂直旋转后端

Advanced Energy Conversion Pub Date : 1965-07-01 DOI: 10.1016/0365-1789(65)90030-5

H. Weh , G. Waltke

引用次数: 1

Single crystal gallium phosphide solar cells 单晶磷化镓太阳能电池

Advanced Energy Conversion Pub Date : 1965-07-01 DOI: 10.1016/0365-1789(65)90031-7

A.S. Epstein, W.O. Groves

{"title":"Single crystal gallium phosphide solar cells","authors":"A.S. Epstein, W.O. Groves","doi":"10.1016/0365-1789(65)90031-7","DOIUrl":"10.1016/0365-1789(65)90031-7","url":null,"abstract":"<div>Solar cells have been fabricated from epitaxially deposited single crystal gallium phosphide. Two types of cells have been found: (1) Those having their major spectral response at about 0·75 μ and referred. to as extrinsic, and (2) those which have their main response at 0·45 μ and are referred to as intrinsic cells.For the extrinsic cells, at 23°C in sunlight, an open circuit voltage (Voc) of about 0·6 V with a short circuit current density, Jsc, of 4 mA/cm2 has been found. Conversion efficiencies somewhat above 1 per cent have been noted. Correspondingly, for the 0·45 μ cells a Voc at 23°C of 1·35 V and a Jsc of 1·4 mA/cm2 have been obtained with a conversion efficiency, measured in sunlight, up to 1 per cent. Cell areas have ranged from 0·2 cm2 to 0·5 cm2.With increasing temperature, the Voc of both types of cells decreases with a temperature coefficient, β of about 3 mV/deg. The Jsc of the 0·45 μ cell increases with temperature and the temperature variation can be expressed as <figure><img></figure> with ΔE≈ ·05 eV. The extrinsic cell, on the other hand, shows no change in Jsc to 200°C, after which it decreases rapidly.The p-n junctions of these cells appear to be graded as evidenced by the capacity-voltage (c-v) relation which suggests a 1/c3 variation with voltage. From measurement of the minority carrier diffusion length using the technique of Logan and Chynoweth [1] the minority carrier lifetime in these cells is found to vary between 10−10 and 10−12 sec.</div>","PeriodicalId":100032,"journal":{"name":"Advanced Energy Conversion","volume":"5 2","pages":"Pages 161-172"},"PeriodicalIF":0.0,"publicationDate":"1965-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0365-1789(65)90031-7","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77819525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

Zum betriebsverhalten des wanderfeld-mhd-wandlers mit berückischtigung der randströmung 用于游轮假设假设路由

Advanced Energy Conversion Pub Date : 1965-05-01 DOI: 10.1016/0365-1789(65)90013-5

H. Weh, P.V. Grumbkow

引用次数: 1

Galvano-thermomagnetic phenomena and the figure of merit in bismuth—I transport properties of intrinsic material 固有材料中铋- i输运性质的电热磁现象和优值图

Advanced Energy Conversion Pub Date : 1965-05-01 DOI: 10.1016/0365-1789(65)90010-X

T.C. Harman, J.M. Honig, B.M. Tarmy

{"title":"Galvano-thermomagnetic phenomena and the figure of merit in bismuth—I transport properties of intrinsic material","authors":"T.C. Harman, J.M. Honig, B.M. Tarmy","doi":"10.1016/0365-1789(65)90010-X","DOIUrl":"https://doi.org/10.1016/0365-1789(65)90010-X","url":null,"abstract":"<div>Transport theory based on the relaxation time formalism has been applied to bismuth; the results are used in Part II of this paper to determine the figure of merit of Bi in energy conversion processes. Using the Jones-Shoenberg model for bismuth, analytic expressions have been derived for the electrical resistivity, thermal conductivity, and for the Hall, Seebeck and Nernst coefficients. The Boltzmann transport equation was solved for the perturbed distribution function using anisotropic relaxation times. The result was then introduced in the transport integrals for the electric current and for energy flux to obtain the phenomenological equations for each set of charge carriers associated with a given ellipsoid. The contributions of each group of carriers were then added in the common symmetry coordinate system of the crystal to obtain the above-mentioned transport coefficients. To derive analytic expressions, it was necessary to consider the special cases where the magnetic field is aligned with each of the three symmetry axes and to pass to the limit of very low or very high magnetic fields.</div>","PeriodicalId":100032,"journal":{"name":"Advanced Energy Conversion","volume":"5 1","pages":"Pages 1-19"},"PeriodicalIF":0.0,"publicationDate":"1965-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0365-1789(65)90010-X","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91756215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

A comparison of several models for porous gas-diffusion electrodes 多孔气体扩散电极几种模型的比较

Advanced Energy Conversion Pub Date : 1965-05-01 DOI: 10.1016/0365-1789(65)90012-3

R. Darby

引用次数: 6

Effects of electron irradiation on N on P silicon solar cells 电子辐照对P硅太阳能电池氮的影响

Advanced Energy Conversion Pub Date : 1965-05-01 DOI: 10.1016/0365-1789(65)90011-1

Werner Luft

{"title":"Effects of electron irradiation on N on P silicon solar cells","authors":"Werner Luft","doi":"10.1016/0365-1789(65)90011-1","DOIUrl":"https://doi.org/10.1016/0365-1789(65)90011-1","url":null,"abstract":"<div>Radiation tests on bare N/P silicon solar cells and solar cells with various cover materials were performed with 1 MeV energy electrons for integrated fluxes up to 1016 e/cm2.The effect of electron irradiation upon the physical, electrical, optical, and thermal characteristics of the cells were analyzed and are presented in parametric form wherever practical. In particular, the changes with electron flux in the electrical output, and the temperature coefficients of the electrical output as well as the effect of the angle of incident radiation upon the output, have been investigated. The variations of spectral transmittance of cover materials and the spectral reflectance at angles of incidence between zero and 75 degrees were measured and the data compared to the electrical measurements results. The solar absorptance as a function of angle of incidence and the hemispherical emittance were calculated.All electrical measurements were performed under illumination closely approximating the spectrum of solar irradiation in outer space, and at the intensity of the solar constant. This is of particular importance when studying the effects of charged particle radiation, since the data thus obtained can be directly utilized for spacecraft solar array design.</div>","PeriodicalId":100032,"journal":{"name":"Advanced Energy Conversion","volume":"5 1","pages":"Pages 21-40, IN1, 41"},"PeriodicalIF":0.0,"publicationDate":"1965-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0365-1789(65)90011-1","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91720957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Galvano-thermomagnetic phenomena and the figure of merit in bismuth—I transport properties of intrinsic material 固有材料中铋- i输运性质的电热磁现象和优值图

Advanced Energy Conversion Pub Date : 1965-05-01 DOI: 10.1016/0365-1789(65)90010-X

T. Harman, J. Honig, B. M. Tarmy

引用次数: 9