Technologie und anwendung des peltier-effektes

W. Hänlein
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引用次数: 2

Abstract

The practical application of the Peltier effect has been made possible by the development of suitable thermoelectric semiconductors. The use of bismuth antimonium and bismuth selenium tellurides permits a thermoelectric figure of merit of 0·0030–0·0035 per degree Kelvin. The maximum temperature difference obtaining between the hot and cold junction of industrial thermoelements ranges between 60 and 70°C. These semiconductors are produced by powder metallurgical methods or by melting methods. The powder metallurgical method offers the advantage of freedom in shaping, but the thermoelectric figure of merit obtained is not so high as with the melting method. The latter method is generally restricted to cylindrical shapes, prismatic legs being obtained only by cutting cylindrical bodies. In the construction of heat sinks preference is currently being given to the plate type of construction since it provides mechanical stability and permits locally concentrated heat absorption. The practical use of Peltier cooling units is recommended in cases where low heat absorption capacities are required, i.e. in a range in which compressors with their high cooling capacity and high space requirements cannot be used.

技术和效应效应的应用
适当的热电半导体的发展使珀尔帖效应的实际应用成为可能。碲化铋锑和碲化铋硒的使用使热电性能值达到每开尔文0·0030-0·0035。工业热电元件的热端和冷端之间的最大温差在60至70°C之间。这些半导体是用粉末冶金法或熔化法生产的。粉末冶金法具有成形自由的优点,但得到的热电系数不如熔炼法高。后一种方法通常限于圆柱形,只有通过切割圆柱体才能获得棱柱形腿。在建造散热器时,目前优先考虑的是板式结构,因为它提供了机械稳定性并允许局部集中吸热。在对吸热能力要求较低的情况下,即在不能使用具有高制冷量和高空间要求的压缩机的范围内,建议实际使用珀尔帖冷却机组。
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