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Chalcogenide Letters最新文献

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Impact of TeO2-B2O3 manipulation on optical and radiation shielding properties of mixed glass former borotellurite glass TeO2-B2O3处理对混合玻璃原硼碲酸盐玻璃光学和辐射屏蔽性能的影响
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2023-01-01 DOI: 10.15251/cl.2023.207.515
D. Said, N. M. Samsudin, M. Naaim, M. I. Sayyed, M. Zaid, M. Azlan, S. M. Iskandar, N. N. Yusof, E. S. Sazali, R. Hisam
{"title":"Impact of TeO2-B2O3 manipulation on optical and radiation shielding properties of mixed glass former borotellurite glass","authors":"D. Said, N. M. Samsudin, M. Naaim, M. I. Sayyed, M. Zaid, M. Azlan, S. M. Iskandar, N. N. Yusof, E. S. Sazali, R. Hisam","doi":"10.15251/cl.2023.207.515","DOIUrl":"https://doi.org/10.15251/cl.2023.207.515","url":null,"abstract":"(80-x)B2O3-xTeO2-10Li2O-Al2O3 (x=10-60 mol%) mixed glass former (MGF) glasses were prepared by using melt-quenching method to investigate the effect of mixed glass former between B2O3 and TeO2 on the optical properties and to evaluate the radiation shielding ability of the glass. Extremes observed at x=40 mol% for all optical properties’ parameters were suggested due to large number of non-bridging oxygen. The radiation shielding properties of the glass samples were determined for 0.284 MeV–1.333 MeV energy range by using Phy-X/PSD software. The studied radiation parameters have shown enhancement due to high density and high atomic number, Z of Te over B","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"1 1","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67024622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of femtosecond nonlinear optical coefficients for Bi doped Se85-xTe15Bix chalcogenide thin films 掺铋Se85-xTe15Bix硫系薄膜飞秒非线性光学系数研究
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2023-01-01 DOI: 10.15251/cl.2023.205.353
P. Yadav, C. Tyagi, A. Devi, N. Gahlot
{"title":"Study of femtosecond nonlinear optical coefficients for Bi doped Se85-xTe15Bix chalcogenide thin films","authors":"P. Yadav, C. Tyagi, A. Devi, N. Gahlot","doi":"10.15251/cl.2023.205.353","DOIUrl":"https://doi.org/10.15251/cl.2023.205.353","url":null,"abstract":"The present work reports the influence of selenium replacement by bismuth on the nonlinear optical parameters of ternary Se85-xTe15Bix (x=0, 1, 2, 3, 4, 5 atomic %) chalcogenide thin films. Calculation of nonlinear refractive index (n2), two-photon absorption coefficient (β2) and third-order susceptibility (χ (3)) by well known Z-scan technique with femtosecond laser pulses were done. The Z-scan spectra for Se85-xTe15Bix upto Bi= 4 atomic % results in self- focusing behavior of n2 is positive while for Bi=5 atomic % n2 is negative. The behavior of n2 by using different physical parameters are exlpained. The comparison of experimental and theoretical values of n2 with pure silica are also studied. The presence of the valley at focus in open aperture Z-scan graph demonstrates strong reverse saturable absorption. The figure of merit (FOM) for the SeTe-Bi chalcogenide thin films is found to be less than 1 and are beneficial for all-optical switch devices.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"1 1","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67024873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The effect of the structure on the physical properties in GexAs10Se90-x glasses 结构对GexAs10Se90-x玻璃物理性能的影响
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2023-01-01 DOI: 10.15251/cl.2023.201.55
S. W. Xu, T. Liang, X. Y. Zhu
{"title":"The effect of the structure on the physical properties in GexAs10Se90-x glasses","authors":"S. W. Xu, T. Liang, X. Y. Zhu","doi":"10.15251/cl.2023.201.55","DOIUrl":"https://doi.org/10.15251/cl.2023.201.55","url":null,"abstract":"We have prepared a group of GexAs10Se90-x glass(x=5, 10, 15, 20, 25, 30, and 35 at. %) and investigated their structure and physical properties. It was found that, the minimum refractive index and maximum optical bandgap occur in Ge25As10Se65 glass that is chemically stoichiometric. Analysis of Raman spectra of the glasses indicated that the number of the Ge-Ge, As-As, and Se-Se homopolar bonds is closely related to the bandgap, because the band-tails formed by homopolar bonds could reduce the optical bandgap. The transition behavior of the structural units and physical properties of the glasses occurs at the glass with the chemically stoichiometric composition, and thus the chemical composition dominates physical properties of GexAs10Se90-x chalcogenide glasses","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49588853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural, Swanepoel’s method, optical and electrical parameters of vacuum evaporated Zn50Se50 thin films 真空蒸发Zn50Se50薄膜的结构、斯瓦内普尔法、光学和电学参数
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2023-01-01 DOI: 10.15251/cl.2023.201.19
A. Alwany, G. Youssef, M. Algradee, M. Abdel-Rahim, A. Alnakhlani, B. Hassan
{"title":"Structural, Swanepoel’s method, optical and electrical parameters of vacuum evaporated Zn50Se50 thin films","authors":"A. Alwany, G. Youssef, M. Algradee, M. Abdel-Rahim, A. Alnakhlani, B. Hassan","doi":"10.15251/cl.2023.201.19","DOIUrl":"https://doi.org/10.15251/cl.2023.201.19","url":null,"abstract":"Thin films of Zn50Se50 were prepared by the vacuum evaporation technique on glass substrates. The influence of annealing temperature (Tann.) on the structural and optical properties of ZnSe polycrystalline films was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical transmittance T (λ). The crystalline phases that were found in the Zn50Se50 thin films are ZnSe, Se and Zn. The refractive index (n) and the thickness of the films (d) were calculated using Swanepoel’s method for the films annealed at (423 K). The mechanism of optical absorption follows the rule of direct transition. The values of band gap (EG) were found to decrease from about 2.933 to 2.635 eV with the increasin of the Tann. from 300 to 423 K. Urbach energy (EU) was calculated and found to the increase by increasing Tann. The dispersion of the n was discussed in terms of the single-oscillator Wemple and DiDomenico model. The Arrhenius formula was used to discuss the electrical conductivity (σDC), activation energy (ΔE) and preexponential factor (σo).","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46771467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural, electronic and thermoelectric properties of LiAlX2 (X=S and Se) chalcopyrites: promising for thermoelectric power generators LiAlX2（X=S和Se）硫黄铁矿的结构、电子和热电性能：有望用于热电发电机
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2023-01-01 DOI: 10.15251/cl.2023.201.73
J. Kumari, C. Singh, R. Agrawal, B. L. Choudhary, A. Verma
{"title":"Structural, electronic and thermoelectric properties of LiAlX2 (X=S and Se) chalcopyrites: promising for thermoelectric power generators","authors":"J. Kumari, C. Singh, R. Agrawal, B. L. Choudhary, A. Verma","doi":"10.15251/cl.2023.201.73","DOIUrl":"https://doi.org/10.15251/cl.2023.201.73","url":null,"abstract":"Herein, we have inquired the structural, electronic and thermoelectric properties of the couple of chalcopyrite structured solids LiAlX2 (X=S and Se) with the help of density functional theory (DFT), which is tracked by resolution of the Boltzmann transport equation with the constant relaxation time calculations. The LDA (Localized Density Approximation), PBE (Perdew-Burke-Ernzerhof), PBEsol (PBE functional revised for solids) and WC (Wu-Cohen) exchange correlation potentials have been used. The calculated lattice constants a = 5.271 Å; c = 10.178 Å and a = 6.226 Å; c = 12.165 Å for LiAlS2 and LiAlSe2 respectively and the band gap of the mentioned compounds are found in range from 1.74 eV to 3.13 eV. The dependency of thermoelectric parameters are calculated with different temperature (300-800K) and carrier concentration 1018 1019 cm-3 . From the study of ZT (figure of merit’s ZT= S2 σT/κ the dimensionless parameter) and it is found that it’s value for both the compounds in n-type as well as in p-type region is ‘unity’. Since these compounds can be the promising candidate for thermoelectric devices also these compounds are non-toxic, eco-friendly and good alternative for the green and renewable source of electric power generators.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46062494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural, morphology and optical properties studies of Ni doped CdSe thin films Ni掺杂CdSe薄膜的结构、形貌及光学性能研究
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2023-01-01 DOI: 10.15251/cl.2023.205.367
A. J. Jarjees Alsoofy, R. Ali, Z. A. Mosa, N. Habubi, S. Chiad
{"title":"Structural, morphology and optical properties studies of Ni doped CdSe thin films","authors":"A. J. Jarjees Alsoofy, R. Ali, Z. A. Mosa, N. Habubi, S. Chiad","doi":"10.15251/cl.2023.205.367","DOIUrl":"https://doi.org/10.15251/cl.2023.205.367","url":null,"abstract":"Thermal evaporation was used to prepare nickel (Ni) doped cadmium selenide thin films in different proportions (0, 1 and 3) wt.% on glass substrates at room temperature. According to XRD examination, all films possessed a polycrystalline hexagonal structure, with the (002) plane as the ideal orientation. According to AFM analysis, the average particle size decreases as the amount of doping increases, showing that the distribution of grains has become more uniform. The transmission and distortion ratios of the films were measured to learn more about their optical properties, which revealed that the (CdSe) films' transmittance decreased as the Ni films were doped, respectively. Additionally, it was discovered that all produced films had absorption coefficients larger than (α >104 𝑐𝑐𝑚𝑚- 1 ) and that the value of this coefficient rises with increasing doping. The films exhibited all direct optical energy gaps, according to the findings (CdSe). As the doping fraction decreased, the gap values decreased from 1.72 eV to 1.62 eV.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"1 1","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67024939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical investigation of fundamental physical properties of full-Heusler Co2VZ (Z= Al, Bi, Ga, Ge) compounds 全heusler Co2VZ (Z= Al, Bi, Ga, Ge)化合物基本物理性质的理论研究
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2023-01-01 DOI: 10.15251/cl.2023.207.535
S. Mahla, R. Agrawal, S. Kumar, P. Singh, M. Lal, S. Singh, A. Verma
{"title":"Theoretical investigation of fundamental physical properties of full-Heusler Co2VZ (Z= Al, Bi, Ga, Ge) compounds","authors":"S. Mahla, R. Agrawal, S. Kumar, P. Singh, M. Lal, S. Singh, A. Verma","doi":"10.15251/cl.2023.207.535","DOIUrl":"https://doi.org/10.15251/cl.2023.207.535","url":null,"abstract":"A subclass of ternary intermetallic known as Heusler compounds is being employed in the steel industry to increase material strength. This study examines the structural, electrical, optical, and magnetic properties of Co2VZ (Z=Al, Bi, Ge, Si) compounds using two different methods. First is full potential linearized augmented plane wave (FP-LAPW) method by WIEN2k and second is pseudo potential method by Atomic Tool Kit-Virtual Nano-Lab. The equivalent energy gaps in the minority-spin of Co2VZ (Z= Al, Bi, Ga, Ge) with WIEN2k code, which displays 100% spin polarization, are 0.703, 0.384, 0.186, and 0.67 eV near to the Fermi level. Furthermore, it is discovered that these compounds are absolutely half-metallic ferromagnetic (HMF). With the exception of Co2VBi, which exhibits metallic properties, the aforementioned compounds exhibit 0.525, 0.0, 0.553, and 0.786 eV band gaps in the ATK-VNL code and indicate 100% spin polarization. The magnetic moments of the compounds Co2VZ (Z= Al, Bi, Ga, Ge) are found to be 2.976, 4.003, 1.989, and 3.001 µB, respectively, in the WIEN2k code. The relative magnetic moments of the aforementioned compounds are also 1.991, 3.947, 1.999, and 2.997 µB, according to the ATK-VNL code.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"1 1","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67024963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photo-induced effects in Ge-Ga-Se films Ge-Ga-Se薄膜的光致效应
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2023-01-01 DOI: 10.15251/cl.2023.207.507
Z. Zhang, Y. Sun, Z. Yang, T. Wei, J. Wu, X. S. Wang, R. Wang
{"title":"Photo-induced effects in Ge-Ga-Se films","authors":"Z. Zhang, Y. Sun, Z. Yang, T. Wei, J. Wu, X. S. Wang, R. Wang","doi":"10.15251/cl.2023.207.507","DOIUrl":"https://doi.org/10.15251/cl.2023.207.507","url":null,"abstract":"We investigated photo-induced effects in Ge-Ga-Se films. It was found that, thermal annealing causes the increase of the bandgap in the as-prepared films, and all three annealed films show photodarkening (PD) behavior with light illumination but the change of optical bandgap is minimum in Ge25 film. Such PD behavior can be recovered by reannealing of the film. The kinetic process of Tf/Ti exhibits part recovering of PD during the cycle of laser on and off. Moreover, no obvious structural change can be observed in the Raman spectra of the films at different states, especially in that of Ge25 film.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"64 1","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67025063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Composition-dependent properties and network structure of Ge-Se-Te chalcogenide glasses Ge-Se-Te硫系玻璃的组分依赖性质和网络结构
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2023-01-01 DOI: 10.15251/cl.2023.201.1
L. Yang, G. Zhou, C. G. Lin
{"title":"Composition-dependent properties and network structure of Ge-Se-Te chalcogenide glasses","authors":"L. Yang, G. Zhou, C. G. Lin","doi":"10.15251/cl.2023.201.1","DOIUrl":"https://doi.org/10.15251/cl.2023.201.1","url":null,"abstract":"Ge12.5Se87.5-xTex (0≤x≤45) glasses were selected for elucidating the composition-dependent properties and network structure of Te-containing glasses. With increasing Te content (x), Vickers hardness (Hv) and glass transition temperature (Tg) initially increased and then decreased, showing a compositional threshold at x=27.5. It is found that the compositional trend of Hv and Tg is in good accordance with the structural evolution studied by Raman spectra. The results suggest that the introduction of Te leads to the evolution of the network connectivity and average bond strength of Ge12.5Se87.5-xTex glass structure, which imposes an opposite impact on the structural properties (Hv and Tg). This work provides a new insight to the structure-property correlation of Ge-Se-Te, which would facilitate the understanding of the structural role of Te in ChGs.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41899965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phase-change transіtіon of chalcogenіde system Ge8Sb2-xBіxTe11 thіn fіlm usіng sіngle femtosecond laser pulses 采用单飞秒激光脉冲的硫原<e:1>体系(ge8sb2 - xb<s:1> xte11)的相变转换<e:1>
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2022-12-21 DOI: 10.15251/cl.2022.1912.909
V. Karabyn, J. Mіstrіk, Y. Tveryanovіch, P. Bezdіcka, D. Hіmіcs, B. Frumarova, P. Knotek, T. Wagner
{"title":"Phase-change transіtіon of chalcogenіde system Ge8Sb2-xBіxTe11 thіn fіlm usіng sіngle femtosecond laser pulses","authors":"V. Karabyn, J. Mіstrіk, Y. Tveryanovіch, P. Bezdіcka, D. Hіmіcs, B. Frumarova, P. Knotek, T. Wagner","doi":"10.15251/cl.2022.1912.909","DOIUrl":"https://doi.org/10.15251/cl.2022.1912.909","url":null,"abstract":"The phase transformatіon amorphous to crystallіne of thіn fіlms Ge8Sb2-xBіxTe11 system (where x = 0; 1; 2) deposіted by the Flash Thermal Evaporatіon (FE). Phase transformatіon were іnduced by ultra-fast (40 fs) femtosecond sіngle laser pulse іrradіatіon, and were compared іn structure, optіcal propertіes and topography. The obtaіned results demonstrate, that sіngle fs pulse laser іrradіatіon appears to be effectіve іn іnducіng crystallіzatіon of Ge8Sb2-xBіxTe11 thіn fіlms and enablіng the attaіnment of a hіgher speed data set/reset. The substіtutіon of bіsmuth for antіmony leads to a change іn optіcal, electrіcal and thermal propertіes dependіng on the Bі concentratіon for the studіed materіals. The hіgh optіcal contrast makes the studіed Ge8Sb2-xBіxTe11 samples promіsіng for PRAM memorіes.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46155611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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