Photo-induced effects in Ge-Ga-Se films

IF 1.2 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Chalcogenide Letters Pub Date : 2023-01-01 DOI:10.15251/cl.2023.207.507

Z. Zhang, Y. Sun, Z. Yang, T. Wei, J. Wu, X. S. Wang, R. Wang

引用次数: 0

Abstract

We investigated photo-induced effects in Ge-Ga-Se films. It was found that, thermal annealing causes the increase of the bandgap in the as-prepared films, and all three annealed films show photodarkening (PD) behavior with light illumination but the change of optical bandgap is minimum in Ge25 film. Such PD behavior can be recovered by reannealing of the film. The kinetic process of Tf/Ti exhibits part recovering of PD during the cycle of laser on and off. Moreover, no obvious structural change can be observed in the Raman spectra of the films at different states, especially in that of Ge25 film.

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Ge-Ga-Se薄膜的光致效应

我们研究了锗镓硒薄膜的光致效应。结果表明，热退火使薄膜的带隙增大，三种退火后的薄膜在光照下都表现出光变暗(PD)行为，但Ge25薄膜的带隙变化最小。这种PD行为可以通过薄膜的再退火来恢复。在激光开启和关闭的循环过程中，Tf/Ti的动力学过程表现出PD的部分恢复。在不同状态下，薄膜的拉曼光谱没有明显的结构变化，尤其是Ge25薄膜的拉曼光谱。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

1.80

自引率

20.00%

发文量

审稿时长

1 months

期刊介绍： Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.