Structural, Swanepoel’s method, optical and electrical parameters of vacuum evaporated Zn50Se50 thin films

IF 1.2 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Chalcogenide Letters Pub Date : 2023-01-01 DOI:10.15251/cl.2023.201.19

A. Alwany, G. Youssef, M. Algradee, M. Abdel-Rahim, A. Alnakhlani, B. Hassan

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Abstract

Thin films of Zn50Se50 were prepared by the vacuum evaporation technique on glass substrates. The influence of annealing temperature (Tann.) on the structural and optical properties of ZnSe polycrystalline films was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical transmittance T (λ). The crystalline phases that were found in the Zn50Se50 thin films are ZnSe, Se and Zn. The refractive index (n) and the thickness of the films (d) were calculated using Swanepoel’s method for the films annealed at (423 K). The mechanism of optical absorption follows the rule of direct transition. The values of band gap (EG) were found to decrease from about 2.933 to 2.635 eV with the increasin of the Tann. from 300 to 423 K. Urbach energy (EU) was calculated and found to the increase by increasing Tann. The dispersion of the n was discussed in terms of the single-oscillator Wemple and DiDomenico model. The Arrhenius formula was used to discuss the electrical conductivity (σDC), activation energy (ΔE) and preexponential factor (σo).

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真空蒸发Zn50Se50薄膜的结构、斯瓦内普尔法、光学和电学参数

采用真空蒸发技术在玻璃基板上制备了Zn50Se50薄膜。采用x射线衍射仪(XRD)、扫描电镜(SEM)和透射率T (λ)研究了退火温度(Tann.)对ZnSe多晶薄膜结构和光学性能的影响。在Zn50Se50薄膜中发现的晶相为ZnSe、Se和Zn。利用斯瓦内普尔法计算了在(423 K)退火的薄膜的折射率(n)和薄膜厚度(d)，其光吸收机制遵循直接跃迁规律。随着Tann的增加，带隙(EG)从2.933 eV减小到2.635 eV。从300到423 K。计算了乌尔巴赫能(EU)，发现随着鞣制含量的增加，乌尔巴赫能(EU)增加。用单振Wemple和DiDomenico模型讨论了n的色散。采用Arrhenius公式讨论了电导率(σDC)、活化能(ΔE)和指前因子(σo)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

1.80

自引率

20.00%

发文量

审稿时长

1 months

期刊介绍： Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.