Nanoscale Horizons最新文献

{"title":"Plasmonic nanoparticle sensors: current progress, challenges, and future prospects","authors":"Krishna Kant, Reshma Beeram, Yi Cao, Paulo S. S. dos Santos, Lara González-Cabaleiro, Daniel García-Lojo, Heng Guo, Younju Joung, Siddhant Kothadiya, Marta Lafuente, Yong Xiang Leong, Yiyi Liu, Yuxiong Liu, Sree Satya Bharati Moram, Sanje Mahasivam, Sonia Maniappan, Daniel Quesada-González, Divakar Raj, Pabudi Weerathunge, Xinyue Xia, Qian Yu, Sara Abalde-Cela, Ramon A. Alvarez-Puebla, Rizia Bardhan, Vipul Bansal, Jaebum Choo, Luis C. C. Coelho, José M. M. M. de Almeida, Sergio Gómez-Graña, Marek Grzelczak, Pablo Herves, Jatish Kumar, Theobald Lohmueller, Arben Merkoçi, José Luis Montaño-Priede, Xing Yi Ling, Reyes Mallada, Jorge Pérez-Juste, María P. Pina, Srikanth Singamaneni, Venugopal Rao Soma, Mengtao Sun, Limei Tian, Jianfang Wang, Lakshminarayana Polavarapu and Isabel Pastoriza Santos","doi":"10.1039/D4NH00226A","DOIUrl":"10.1039/D4NH00226A","url":null,"abstract":"<p >Plasmonic nanoparticles (NPs) have played a significant role in the evolution of modern nanoscience and nanotechnology in terms of colloidal synthesis, general understanding of nanocrystal growth mechanisms, and their impact in a wide range of applications. They exhibit strong visible colors due to localized surface plasmon resonance (LSPR) that depends on their size, shape, composition, and the surrounding dielectric environment. Under resonant excitation, the LSPR of plasmonic NPs leads to a strong field enhancement near their surfaces and thus enhances various light–matter interactions. These unique optical properties of plasmonic NPs have been used to design chemical and biological sensors. Over the last few decades, colloidal plasmonic NPs have been greatly exploited in sensing applications through LSPR shifts (colorimetry), surface-enhanced Raman scattering, surface-enhanced fluorescence, and chiroptical activity. Although colloidal plasmonic NPs have emerged at the forefront of nanobiosensors, there are still several important challenges to be addressed for the realization of plasmonic NP-based sensor kits for routine use in daily life. In this comprehensive review, researchers of different disciplines (colloidal and analytical chemistry, biology, physics, and medicine) have joined together to summarize the past, present, and future of plasmonic NP-based sensors in terms of different sensing platforms, understanding of the sensing mechanisms, different chemical and biological analytes, and the expected future technologies. This review is expected to guide the researchers currently working in this field and inspire future generations of scientists to join this compelling research field and its branches.</p>","PeriodicalId":93,"journal":{"name":"Nanoscale Horizons","volume":" 12","pages":" 2085-2166"},"PeriodicalIF":8.0,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11378978/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142138674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unlocking the secrets of porous silicon formation: insights into magnesiothermic reduction mechanism using in situ powder X-ray diffraction studies†","authors":"Sarah A. Martell, Maximilian Yan, Robert H. Coridan, Kevin H. Stone, Siddharth V. Patwardhan and Mita Dasog","doi":"10.1039/D4NH00244J","DOIUrl":"10.1039/D4NH00244J","url":null,"abstract":"<p >The magnesiothermic reduction of SiO<small>₂</small> is an important reaction as it is a bulk method that produces porous Si for a wide range of applications directly from SiO<small>₂</small>. While its main advantage is potential tunability, the reaction behavior and final product properties are heavily dependent on many parameters including feedstock type. However, a complete understanding of the reaction pathway has not yet been achieved. Here, using <em>in situ</em> X-ray diffraction analysis, for the first time, various pathways through which the magnesiothermic reduction reaction proceeds were mapped. Further, the key parameters and conditions that determine which pathways are favored were determined. It was discovered that the reaction onset temperatures can be as low as 348 ± 7 °C, which is significantly lower when compared to previously reported values. The onset temperature is dependent on the size of Mg particles used in the reaction. Further, Mg<small>₂</small>Si was identified as a key intermediate rather than a reaction byproduct during the reduction process. Its rate of consumption is determined by the reaction temperature which needs to be &gt;561 °C. These findings can enable process and product optimization of the magnesiothermic reduction process to manufacture and tune porous Si for a range of applications.</p>","PeriodicalId":93,"journal":{"name":"Nanoscale Horizons","volume":" 10","pages":" 1833-1842"},"PeriodicalIF":8.0,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142071456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Valley-selective carrier transfer in SnS-based van der Waals heterostructures†","authors":"E. Sutter, H.-P. Komsa and P. Sutter","doi":"10.1039/D4NH00231H","DOIUrl":"10.1039/D4NH00231H","url":null,"abstract":"<p >Valleytronics, <em>i.e.</em>, use of the valley degree of freedom in semiconductors as an information carrier, is a promising alternative to conventional approaches for information processing. Transition metal dichalcogenides with degenerate <em>K</em>/<em>K</em>′ valleys have received attention as prototype 2D/layered semiconductors for valleytronics, but these systems rely on exotic effects such as the valley-Hall effect for electrical readout of the valley occupancy. Non-traditional valleytronic systems hosting sets of addressable non-degenerate valleys could overcome this limitation. In the van der Waals semiconductor Sn(<small>II</small>) sulfide (SnS), for instance, different bandgaps and band edges may allow manipulating the population of the <em>X</em>- and <em>Y</em>-valleys <em>via</em> charge transfer across interfaces to other layered semiconductors. Here, we establish this concept by comparing SnS flakes and SnS-based heterostructures. Cathodoluminescence spectroscopy shows a striking reversal of the luminescence intensity of the two valleys in SnS–GeS van der Waals stacks, which stems from a selective electron transfer from the <em>Y</em>-valley into GeS while <em>X</em>-valley electrons remain confined to SnS. Our results suggest that non-traditional systems, embodied here by SnS-based van der Waals heterostructures, open avenues for valley-selective readout relying on design parameters such as heterostructure band offsets that are among the core concepts of semiconductor technology.</p>","PeriodicalId":93,"journal":{"name":"Nanoscale Horizons","volume":" 10","pages":" 1823-1832"},"PeriodicalIF":8.0,"publicationDate":"2024-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142015624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultrabroadband nonlinear enhancement of mid-infrared frequency upconversion in hyperbolic metamaterials†","authors":"Congfu Zhang, Zhaolu Wang, Changchang Zhang, Wenjuan Shi, Wei Li, Ke Gao and Hongjun Liu","doi":"10.1039/D4NH00240G","DOIUrl":"10.1039/D4NH00240G","url":null,"abstract":"<p >Metamaterials have demonstrated significant potential for enhancing nonlinear processes at the nanoscale. The presence of narrowband hot-spots and highly inhomogeneous mode-field distributions often limit the enhancement of nonlinear interactions over larger spatial scales. This has posed a formidable challenge in achieving simultaneous enhancement across a broadband spectral range, significantly constraining the potential of photonic nanostructures in enhancing nonlinear frequency conversion. Here, we propose a broadband resonant mode matching method through near-field examinations that supports the multipole modes and enables the development of an ultrabroadband-enhanced 3–5 μm mid-infrared frequency upconversion technique utilizing a hyperbolic triangular pyramidal metasurface. The gap-plasma mode of the hyperbolic metamaterial multilayer system excites narrowly high-order resonances at near-infrared pump light wavelengths, while the slow-light effect generated by the dipoles achieves ultrabroadband near-field enhancement at mid-infrared wavelengths. The symmetry breaking of the triangular structure localizes these resonant modes at the tips, enabling mode-matched modulation at different wavelengths, and thus boosting the nonlinear frequency conversion process. Our approach provides a promising platform for metasurface-based frequency conversion techniques.</p>","PeriodicalId":93,"journal":{"name":"Nanoscale Horizons","volume":" 10","pages":" 1792-1803"},"PeriodicalIF":8.0,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141970079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reversing the magnetization of 50-nm-wide ferromagnets by ultrashort magnons in thin-film yttrium iron garnet†","authors":"Shreyas S. Joglekar, Korbinian Baumgaertl, Andrea Mucchietto, Francis Berger and Dirk Grundler","doi":"10.1039/D4NH00095A","DOIUrl":"10.1039/D4NH00095A","url":null,"abstract":"<p >Spin waves (magnons) can enable neuromorphic computing by which one aims at overcoming limitations inherent to conventional electronics and the von Neumann architecture. Encoding magnon signal by reversing magnetization of a nanomagnetic memory bit is pivotal to realize such novel computing schemes efficiently. A magnonic neural network was recently proposed consisting of differently configured nanomagnets that control nonlinear magnon interference in an underlying yttrium iron garnet (YIG) film [Papp <em>et al.</em>, <em>Nat. Commun.</em>, 2021, <strong>12</strong>, 6422]. In this study, we explore the nonvolatile encoding of magnon signals by switching the magnetization of periodic and aperiodic arrays (gratings) of Ni<small>₈₁</small>Fe<small>₁₉</small> (Py) nanostripes with widths <em>w</em> between 50 nm and 200 nm. Integrating 50-nm-wide nanostripes with a coplanar waveguide, we excited magnons having a wavelength <em>λ</em> of ≈100 nm. At a small spin-precessional power of 11 nW, these ultrashort magnons switch the magnetization of 50-nm-wide Py nanostripes after they have propagated over 25 μm in YIG in an applied field. We also demonstrate the magnetization reversal of nanostripes patterned in an aperiodic sequence. We thereby show that the magnon-induced reversal happens regardless of the width and periodicity of the nanostripe gratings. Our study enlarges substantially the parameter regime for magnon-induced nanomagnet reversal on YIG and is important for realizing in-memory computing paradigms making use of magnons with ultrashort wavelengths at low power consumption.</p>","PeriodicalId":93,"journal":{"name":"Nanoscale Horizons","volume":" 10","pages":" 1740-1748"},"PeriodicalIF":8.0,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11339637/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142015623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"CoX2Y4: a family of two-dimensional magnets with versatile magnetic order†","authors":"Ziyuan Zhao, Zhao Liu, Mark T. Edmonds and Nikhil V. Medhekar","doi":"10.1039/D4NH00103F","DOIUrl":"10.1039/D4NH00103F","url":null,"abstract":"<p >Two-dimensional (2D) magnetic materials offer a promising platform for nanoscale spintronics and for exploration of novel physical phenomena. Here, we predict a diverse range of magnetic orders in cobalt-based 2D single septuple layers CoX<small>₂</small>Y<small>₄</small>, namely, CoBi<small>₂</small>Te<small>₄</small>, CoBi<small>₂</small>Se<small>₂</small>Te<small>₂</small>, CoBi<small>₂</small>Se<small>₄</small>, and CoSb<small>₂</small>Te<small>₄</small>. Notably, CoBi<small>₂</small>Te<small>₄</small> presents intrinsic non-collinear antiferromagnetism (AFM), while the others display collinear AFM. The emergence of AFM in all CoX<small>₂</small>Y<small>₄</small> materials is attributed to the antiferromagnetic 90° Co–Te(Se)–Co superexchange coupling. The origin of non-collinear/collinear orders lies in competing Heisenberg exchange interactions within the Co triangular lattice. A pivotal factor governing the non-collinear order of CoBi<small>₂</small>Te<small>₄</small> is the vanishingly small ratio of exchange coupling between next-nearest neighbour Co and the nearest neighbour Co (<em>J</em><small>₂</small>/<em>J</em><small>₁</small> ∼ 0.01). Furthermore, our investigation into strain effects on CoX<small>₂</small>Y<small>₄</small> lattices demonstrates the tunability of the magnetic state of CoSb<small>₂</small>Te<small>₄</small> from collinear to non-collinear. Our prediction of the unique non-collinear AFM in 2D suggests the potential for observing extraordinary magnetic phenomena in 2D, including non-collinear scattering and magnetic domain walls.</p>","PeriodicalId":93,"journal":{"name":"Nanoscale Horizons","volume":" 10","pages":" 1804-1812"},"PeriodicalIF":8.0,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Emulation of neuron and synaptic functions in spin–orbit torque domain wall devices†","authors":"Durgesh Kumar, Ramu Maddu, Hong Jing Chung, Hasibur Rahaman, Tianli Jin, Sabpreet Bhatti, Sze Ter Lim, Rachid Sbiaa and S. N. Piramanayagam","doi":"10.1039/D3NH00423F","DOIUrl":"10.1039/D3NH00423F","url":null,"abstract":"<p >Neuromorphic computing (NC) architecture has shown its suitability for energy-efficient computation. Amongst several systems, spin–orbit torque (SOT) based domain wall (DW) devices are one of the most energy-efficient contenders for NC. To realize spin-based NC architecture, the computing elements such as synthetic neurons and synapses need to be developed. However, there are very few experimental investigations on DW neurons and synapses. The present study demonstrates the energy-efficient operations of neurons and synapses by using novel reading and writing strategies. We have used a W/CoFeB-based energy-efficient SOT mechanism to drive the DWs at low current densities. We have used the concept of meander devices for achieving synaptic functions. By doing this, we have achieved 9 different resistive states in experiments. We have experimentally demonstrated the functional spike and step neurons. Additionally, we have engineered the anomalous Hall bars by incorporating several pairs, in comparison to conventional Hall crosses, to increase the sensitivity as well as signal-to-noise ratio (SNR). We have performed micromagnetic simulations and transport measurements to demonstrate the above-mentioned functionalities.</p>","PeriodicalId":93,"journal":{"name":"Nanoscale Horizons","volume":" 11","pages":" 1962-1977"},"PeriodicalIF":8.0,"publicationDate":"2024-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Harnessing a silicon carbide nanowire photoelectric synaptic device for novel visual adaptation spiking neural networks†","authors":"Zhe Feng, Shuai Yuan, Jianxun Zou, Zuheng Wu, Xing Li, Wenbin Guo, Su Tan, Haochen Wang, Yang Hao, Hao Ruan, Zhihao Lin, Zuyu Xu, Yunlai Zhu, Guodong Wei and Yuehua Dai","doi":"10.1039/D4NH00230J","DOIUrl":"10.1039/D4NH00230J","url":null,"abstract":"<p >Visual adaptation is essential for optimizing the image quality and sensitivity of artificial vision systems in real-world lighting conditions. However, additional modules, leading to time delays and potentially increasing power consumption, are needed for traditional artificial vision systems to implement visual adaptation. Here, an ITO/PMMA/SiC-NWs/ITO photoelectric synaptic device is developed for compact artificial vision systems with the visual adaption function. The theoretical calculation and experimental results demonstrated that the heating effect, induced by the increment light intensity, leads to the photoelectric synaptic device enabling the visual adaption function. Additionally, a visual adaptation artificial neuron (VAAN) circuit was implemented by incorporating the photoelectric synaptic device into a LIF neuron circuit. The output frequency of this VAAN circuit initially increases and then decreases with gradual light intensification, reflecting the dynamic process of visual adaptation. Furthermore, a visual adaptation spiking neural network (VASNN) was constructed to evaluate the photoelectric synaptic device based visual system for perception tasks. The results indicate that, in the task of traffic sign detection under extreme weather conditions, an accuracy of 97% was achieved (which is approximately 12% higher than that without a visual adaptation function). Our research provides a biologically plausible hardware solution for visual adaptation in neuromorphic computing.</p>","PeriodicalId":93,"journal":{"name":"Nanoscale Horizons","volume":" 10","pages":" 1813-1822"},"PeriodicalIF":8.0,"publicationDate":"2024-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Epitaxial strain manipulation of the cluster glass state in LaMnO3 films","authors":"Yongmei Liang, Haonan Lian, Yaqiang Li, Dan Liu, Baochen Han, Jian Qi and Dongxiao Ma","doi":"10.1039/D4NH00090K","DOIUrl":"10.1039/D4NH00090K","url":null,"abstract":"<p >As a new-type magnetic state, the cluster glass state in manganite is arousing considerable attention due to its important theoretical value and extensive application prospects in condensed matter physics and spintronics. Due to the complex magnetic interactions, the cluster glass state is difficult to form and regulate in single films. Studies report a new phenomenon that epitaxial strain can regulate the formation of the cluster glass state in LaMnO<small>₃</small> (LMO) films. Comparing LMO thin films with different thicknesses grown on a (001)-oriented LaAlO<small>₃</small> (LAO) single crystal substrate, we found that the 20-nm-thick LMO film is more likely to form the cluster glass state than the 60-nm-thick and 120-nm-thick films. This can be attributed to the uneven distribution of strain and Mn ions in the depth profile. Our work demonstrates that thickness is an important method for regulating the formation of the cluster glass state in LMO films.</p>","PeriodicalId":93,"journal":{"name":"Nanoscale Horizons","volume":" 10","pages":" 1785-1791"},"PeriodicalIF":8.0,"publicationDate":"2024-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141886345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quantifying the effect of nanosheet dimensions on the piezoresistive response of printed graphene nanosheet networks†","authors":"Eoin Caffrey, Jose M. Munuera, Tian Carey and Jonathan N. Coleman","doi":"10.1039/D4NH00224E","DOIUrl":"10.1039/D4NH00224E","url":null,"abstract":"<p >Printed networks of 2D nanosheets have found a range of applications in areas including electronic devices, energy storage systems and sensors. For example, the ability to print graphene networks onto flexible substrates enables the production of high-performance strain sensors. The network resistivity is known to be sensitive to the nanosheet dimensions which implies the piezoresistance might also be size-dependent. In this study, the effect of nanosheet thickness on the piezoresistive response of nanosheet networks has been investigated. To achieve this, we liquid-exfoliated graphene nanosheets which were then subjected to centrifugation-based size selection followed by spray deposition onto flexible substrates. The resultant devices show increasing resistivity and gauge factor with increasing nanosheet thickness. We analyse the resistivity <em>versus</em> thickness data using a recently reported model and develop a new model to fit the gauge factor <em>versus</em> thickness data. This analysis allowed us to differentiate between the effect of strain on inter-nanosheet junctions and the straining of the individual nanosheets within the network. Surprisingly, our data implies the nanosheets themselves to display a negative piezo response.</p>","PeriodicalId":93,"journal":{"name":"Nanoscale Horizons","volume":" 10","pages":" 1774-1784"},"PeriodicalIF":8.0,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2024/nh/d4nh00224e?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141869768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}