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Skew scattering and side jump of spin wave across magnetic texture 磁结构中自旋波的斜散射和侧跳
arXiv: Materials Science Pub Date : 2020-10-09 DOI: 10.1103/PHYSREVB.103.054428
Jin Lan, Jiang Xiao
{"title":"Skew scattering and side jump of spin wave across magnetic texture","authors":"Jin Lan, Jiang Xiao","doi":"10.1103/PHYSREVB.103.054428","DOIUrl":"https://doi.org/10.1103/PHYSREVB.103.054428","url":null,"abstract":"Spin wave and magnetic texture are two elementary excitations in magnetic systems, and their interaction leads to rich magnetic phenomena. By describing the spin wave and the magnetic texture using their own collective coordinates, we find that they interact as classical particles traveling in mutual electromagnetic fields. Based on this unified collective coordinate model, we find that both skew scattering and side jump may occur as spin wave passing through magnetic textures. The skew scattering is associated with the magnetic topology of the texture, while the side jump is correlated to the total magnetization of the texture. We illustrate the concepts of skew scattering and side jump by investigating the spin wave trajectories across the topological magnetic Skyrmion and the topologically trivial magnetic bubble respectively.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":"36 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85746249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Vacancy defects induced changes in the electronic and optical properties of NiO studied by spectroscopic ellipsometry and first-principles calculations 利用椭圆偏振光谱和第一性原理计算研究了空位缺陷引起的NiO电子和光学性质的变化
arXiv: Materials Science Pub Date : 2020-10-07 DOI: 10.1063/5.0021650
K. Egbo, C. Liu, C. Ekuma, K. Yu
{"title":"Vacancy defects induced changes in the electronic and optical properties of NiO studied by spectroscopic ellipsometry and first-principles calculations","authors":"K. Egbo, C. Liu, C. Ekuma, K. Yu","doi":"10.1063/5.0021650","DOIUrl":"https://doi.org/10.1063/5.0021650","url":null,"abstract":"Native defects in semiconductors play an important role in their optoelectronic properties. Nickel oxide (NiO) is one of the few wide-gap p-type oxide semiconductors and its conductivity is believed to be controlled primarily by Ni-vacancy acceptors. Herein, we present a systematic study comparing the optoelectronic properties of stoichiometric NiO, oxygen-rich NiO with Ni vacancies (NiO:VNi), and Ni-rich NiO with O vacancies (NiO:VO). The optical properties were obtained by spectroscopic ellipsometry, while valence band spectra were probed by high-resolution x-ray photoelectron spectroscopy. The experimental results are directly compared to first-principles density functional theory + U calculations. Computational results confirm that gap states are present in both NiO systems with vacancies. Gap states in NiO:Vo are predominantly Ni 3d states, while those in NiO:VNi are composed of both Ni 3d and O 2p states. The absorption spectra of the NiO:VNi sample show significant defect-induced features below 3.0 eV compared to NiO and NiO:VO samples. The increase in sub-gap absorptions in NiO:VNi can be attributed to gap states observed in the electronic density of states. The relation between native vacancy defects and electronic and optical properties of NiO are demonstrated, showing that at similar vacancy concentration, the optical constants of NiO:VNi deviate significantly from those of NiO:VO. Our experimental and computational results reveal that although VNi are effective acceptors in NiO, they also degrade the visible transparency of the material. Hence, for transparent optoelectronic device applications, an optimization of native VNi defects with extrinsic doping is required to simultaneously enhance p-type conductivity and transparency.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":"14 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79107371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 34
Effects of Antimony Deposition on Field-Emission Current Density of Ge/Si 锑沉积对Ge/Si场发射电流密度的影响
arXiv: Materials Science Pub Date : 2020-10-07 DOI: 10.1115/1.4050208
V. Burobina
{"title":"Effects of Antimony Deposition on Field-Emission Current Density of Ge/Si","authors":"V. Burobina","doi":"10.1115/1.4050208","DOIUrl":"https://doi.org/10.1115/1.4050208","url":null,"abstract":"To estimate the field-emission current density of a germanium/silicon heterosystem, 20-nm Ge/Si(100) were grown by molecular beam epitaxy. The surface of one sample was covered with a layer of antimony, which was removed in vacuum prior to the samples being measured. A second sample of Ge/Si was exposed to room air in the absence of antimony. The current-voltage characteristics of both samples obtained by scanning tunneling microscopy were discovered to be in agreement with classical Fowler-Nordheim theory. The density of emission current from Ge nanocrystal exceeds the density of emission current from the wetting layer of Ge/Si. The density of emission current of pure Ge nanocrystal is less than the density of emission current of Ge nanocrystal with adsorption layers.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":"5 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85587892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Imaging Topological Spin Structures Using Light-Polarization and Magnetic Microscopy 利用光偏振和磁显微镜成像拓扑自旋结构
arXiv: Materials Science Pub Date : 2020-10-07 DOI: 10.1103/PHYSREVAPPLIED.15.024040
Till Lenz, G. Chatzidrosos, Zhiyuan Wang, L. Bougas, Y. Dumeige, A. Wickenbrock, Nico Kerber, J. Z'azvorka, Fabian Kammerbauer, M. Kläui, Zeeshawn Kazi, K. Fu, K. Itoh, H. Watanabe, D. Budker
{"title":"Imaging Topological Spin Structures Using Light-Polarization and Magnetic Microscopy","authors":"Till Lenz, G. Chatzidrosos, Zhiyuan Wang, L. Bougas, Y. Dumeige, A. Wickenbrock, Nico Kerber, J. Z'azvorka, Fabian Kammerbauer, M. Kläui, Zeeshawn Kazi, K. Fu, K. Itoh, H. Watanabe, D. Budker","doi":"10.1103/PHYSREVAPPLIED.15.024040","DOIUrl":"https://doi.org/10.1103/PHYSREVAPPLIED.15.024040","url":null,"abstract":"We present an imaging modality that enables detection of magnetic moments and their resulting stray magnetic fields. We use wide-field magnetic imaging that employs a diamond-based magnetometer and has combined magneto-optic detection (e.g. magneto-optic Kerr effect) capabilities. We employ such an instrument to image magnetic (stripe) domains in multilayered ferromagnetic structures.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":"43 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73893873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Identification of LiNi and VNi acceptor levels in doped nickel oxide 掺杂氧化镍中LiNi和VNi受体水平的鉴定
arXiv: Materials Science Pub Date : 2020-10-06 DOI: 10.1063/5.0032102
R. Karsthof, H. von Wenckstern, V. S. Olsen, M. Grundmann
{"title":"Identification of LiNi and VNi acceptor levels in doped nickel oxide","authors":"R. Karsthof, H. von Wenckstern, V. S. Olsen, M. Grundmann","doi":"10.1063/5.0032102","DOIUrl":"https://doi.org/10.1063/5.0032102","url":null,"abstract":"Nickel oxide, in particular in its doped, semiconducting form, is an important component of several optoelectronic devices. Doping NiO is commonly achieved either by incorporation of lithium, which readily occupies Ni sites substitutionally, producing the Li$_{text{Ni}}$ acceptor, or by supplying reactive oxygen species during NiO film deposition, which leads to the formation of Ni vacancies (V$_{mathrm{Ni}}$). However, the energetic position of these acceptors in the NiO band gap has not been experimentally determined until today. In this work, we close this knowledge gap by studying rectifying n$^{++}$p heterojunctions of NiO on top of fluorine-doped tin oxide. These structures show sufficient rectification to perform electric characterization by defect spectroscopic techniques, specifically capacitance-voltage and thermal admittance spectroscopy. Using these methods, the (0/-) charge transition levels are determined to be 190meV and 409meV above the valence band edge for the Li$_{text{Ni}}$ and the V$_{text{Ni}}$ acceptor, respectively.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":"34 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85408113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
N-polar GaN/AlN resonant tunneling diodes n极GaN/AlN谐振隧道二极管
arXiv: Materials Science Pub Date : 2020-10-05 DOI: 10.1063/5.0022143
Yongjin Cho, J. Encomendero, S. Ho, H. Xing, D. Jena
{"title":"N-polar GaN/AlN resonant tunneling diodes","authors":"Yongjin Cho, J. Encomendero, S. Ho, H. Xing, D. Jena","doi":"10.1063/5.0022143","DOIUrl":"https://doi.org/10.1063/5.0022143","url":null,"abstract":"N-polar GaN/AlN resonant tunneling diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current-voltage characteristics reveal a negative differential conductance (NDC) region with a peak tunneling current of 6.8$pm$ 0.8 kA/cm$^2$ at a forward bias of ~8 V. Under reverse bias, the polarization-induced threshold voltage is measured at ~$-$4 V. These resonant and threshold voltages are well explained with the polarization field which is opposite to that of the metal-polar counterpart, confirming the N-polarity of the RTDs. When the device is biased in the NDC-region, electronic oscillations are generated in the external circuit, attesting to the robustness of the resonant tunneling phenomenon. In contrast to metal-polar RTDs, N-polar structures have the emitter on the top of the resonant tunneling cavity. As a consequence, this device architecture opens up the possibility of seamlessly interfacing$-$via resonant tunneling injection$-$a wide range of exotic materials with III-nitride semiconductors, providing a route to explore new device physics.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":"112 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87648385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Transversal flexoelectric coefficient for nanostructures at finite deformations from first principles 基于第一性原理的有限变形纳米结构横向挠曲电系数
arXiv: Materials Science Pub Date : 2020-10-05 DOI: 10.1103/PHYSREVMATERIALS.5.L030801
D. Codony, I. Arias, Phanish Suryanarayana
{"title":"Transversal flexoelectric coefficient for nanostructures at finite deformations from first principles","authors":"D. Codony, I. Arias, Phanish Suryanarayana","doi":"10.1103/PHYSREVMATERIALS.5.L030801","DOIUrl":"https://doi.org/10.1103/PHYSREVMATERIALS.5.L030801","url":null,"abstract":"We present a novel formulation for calculating the transversal flexoelectric coefficient of nanostructures at finite deformations from first principles. Specifically, we introduce the concept of emph{radial polarization} to make the coefficient a well-defined quantity for uniform bending deformations. We use the framework to calculate the flexoelectric coefficient for group IV atomic monolayers using density functional theory. We find that graphene's coefficient is significantly larger than previously reported, with a charge transfer mechanism that differs from other members of its group.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":"177 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80676938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
Ternary hypervalent silicon hydrides via lithium at high pressure 高压下三元高价硅氢化物
arXiv: Materials Science Pub Date : 2020-10-04 DOI: 10.1103/physrevmaterials.4.113607
Tianxiao Liang, Zihan Zhang, Xiaolei Feng, Haojun Jia, C. Pickard, Simon A. T. Redfern, D. Duan
{"title":"Ternary hypervalent silicon hydrides via lithium at high pressure","authors":"Tianxiao Liang, Zihan Zhang, Xiaolei Feng, Haojun Jia, C. Pickard, Simon A. T. Redfern, D. Duan","doi":"10.1103/physrevmaterials.4.113607","DOIUrl":"https://doi.org/10.1103/physrevmaterials.4.113607","url":null,"abstract":"Hydrogen is rarely observed as ligand in hypervalent species, however, we find that high-pressure hydrogenation may stabilise hypervalent hydrogen-rich materials. Focussing on ternary silicon hydrides via lithium doping, we find anions composed of hypervalent silicon with H ligands formed under high pressure. Our results reveal two new hypervalent anions: layered-SiH$_{5}^{-}$ and tricapped trigonal prismatic SiH$_{6}^{2-}$. These differ from octahedral SiH$_{6}^{2-}$ described in earlier studies. In addition, there are further hydrogen-rich structures Li$_{3}$SiH$_{10}$ and Li$_{2}$SiH$_{6+delta}$ which may be stabilised at high pressure. Our work provides pointers to future investigations on hydrogen-rich materials.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":"86 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79839276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Angle-dependence of interlayer coupling in twisted transition metal dichalcogenide heterobilayers 扭曲过渡金属二硫系异质层层间耦合的角度依赖性
arXiv: Materials Science Pub Date : 2020-10-02 DOI: 10.1021/acs.jpcc.0c09372.s001
W. Geng, V. Wang, J. Lin, T. Ohno, J. Nara
{"title":"Angle-dependence of interlayer coupling in twisted transition metal dichalcogenide heterobilayers","authors":"W. Geng, V. Wang, J. Lin, T. Ohno, J. Nara","doi":"10.1021/acs.jpcc.0c09372.s001","DOIUrl":"https://doi.org/10.1021/acs.jpcc.0c09372.s001","url":null,"abstract":"We reveal by first-principles calculations that the interlayer binding in a twisted MoS2/MoTe2 heterobilayer decreases with increasing twist angle, due to the increase of the interlayer overlapping degree, a geometric quantity describing well the interlayer steric effect. The binding energy is found to be a Gaussian-like function of twist angle. The resistance to rotation, an analogue to the interlayer sliding barrier, can also be defined accordingly. In sharp contrast to the case of MoS2 homobilayer, here the energy band gap reduces with increasing twist angle. We find a remarkable interlayer charge transfer from MoTe2 to MoS2 which enlarges the band gap, but this charge transfer weakens with greater twisting and interlayer overlapping degree. Our discovery provides a solid basis in twistronics and practical instruction in band structure engineering of van der Waals heterostructures.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":"31 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81935856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A molecular dynamics investigation of mechanical properties of graphene reinforced iron composite and the effect of vacancy defect distance from the matrix-fiber interface 石墨烯增强铁复合材料力学性能的分子动力学研究及空位缺陷距离对基体-纤维界面的影响
arXiv: Materials Science Pub Date : 2020-10-01 DOI: 10.1063/5.0037502
Raashiq Ishraaq, Mahmudur Rashid, A. Afsar
{"title":"A molecular dynamics investigation of mechanical properties of graphene reinforced iron composite and the effect of vacancy defect distance from the matrix-fiber interface","authors":"Raashiq Ishraaq, Mahmudur Rashid, A. Afsar","doi":"10.1063/5.0037502","DOIUrl":"https://doi.org/10.1063/5.0037502","url":null,"abstract":"Graphene is a material of excellent mechanical properties, which make it an ideal fiber for reinforcing metal. Since iron is the most used metal in the world, reinforcing iron with graphene can reduce the overall requirement of material in any application where strength is demanded. However, the effect of graphene reinforcement on the mechanical properties of iron needs to be known before the industrial application of the composite. In this paper, we have investigated the mechanical properties of graphene-reinforced iron composite by Molecular Dynamics (MD) method for various conditions. The properties were investigated by applying uniaxial tension on a modeled representative volume element (RVE). The effect of temperature on the mechanical property of the composite was also studied because the knowledge is required for manufacturing products with the composite operating at a wide temperature range. MD analysis also revealed that the initiation of fracture is from the matrix-fiber interface. We also investigated how the distance of vacancy defects from the matrix-fiber interface affects the mechanical properties of the composite, which can be used to select a suitable manufacturing process. The results obtained from this study show that vacancy defects lower the strength at a greater extent as it gets closer to the interface.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":"79 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73046823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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