Applied physics reviews最新文献

{"title":"A novel tapered quartz tuning fork-based laser spectroscopy sensing","authors":"Yufei Ma, Shunda Qiao, Runqiu Wang, Ying He, Chao Fang, Tiantian Liang","doi":"10.1063/5.0214874","DOIUrl":"https://doi.org/10.1063/5.0214874","url":null,"abstract":"A novel tapered quartz tuning fork (QTF) was designed to enhance its stress magnitude and charge distribution in QTF-based laser spectroscopy, which had a low resonant frequency of 7.83 kHz and a wide fork gap for long energy accumulation time and easy optical alignment. Compared to the reported rectangular QTF, this tapered QTF transfers the maximum stress position from the root to the middle to improve its sensing performance. Furthermore, the unique design eliminates the 90° right angles typically found in standard QTFs, which often lead to undesired “webs” and “facets” during the etching process. This design minimizes performance degradation by reducing the presence of residual unexpected materials. QTF-based laser spectroscopy of quartz-enhanced photoacoustic spectroscopy (QEPAS) and light-induced thermoelastic spectroscopy (LITES) were adopted to verify its performance. Compared with the widely used standard QTF, the total surface charge of the tapered QTF was improved 5.08 times and 5.69 times in QEPAS and LITES simulations, respectively. Experiments revealed that this tapered QTF-based QEPAS sensor had a 3.02 times improvement in signal-to-noise-ratio (SNR) compared to the standard QTF-based system. Adding an acoustic micro-resonator to this tapered QTF-based QEPAS sensor improved the signal level by 97.20 times. The minimum detection limit (MDL) for acetylene (C2H2) detection was determined to be 16.45 ppbv. In the LITES technique, compared to the standard QTF, this tapered QTF-based sensor had a 3.60 times improvement in SNR. The MDL for C2H2 detection was determined to be 146.39 ppbv.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"40 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142488418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Time-resolved x-ray imaging of nanoscale spin-wave dynamics at multi-GHz frequencies using low-alpha synchrotron operation","authors":"S. Mayr, J. Förster, S. Finizio, K. Schultheiss, R. A. Gallardo, R. Narkovicz, G. Dieterle, A. Semisalova, J. Bailey, E. Kirk, A. Suszka, J. Lindner, J. Gräfe, J. Raabe, G. Schütz, M. Weigand, H. Stoll, S. Wintz","doi":"10.1063/5.0206576","DOIUrl":"https://doi.org/10.1063/5.0206576","url":null,"abstract":"Time-resolved x-ray microscopy is used in a low-alpha synchrotron operation mode to image spin dynamics at an unprecedented combination of temporal and spatial resolution. Thereby, nanoscale spin waves with wavelengths down to 70 nm and frequencies up to 30 GHz are directly observed in ferromagnetic thin film microelements with spin vortex ground states. In an antiparallel ferromagnetic bilayer system, we detect the propagation of both optic and acoustic modes, the latter exhibiting even a strong non-reciprocity. In single-layer systems, quasi-uniform spin waves are observed together with modes of higher order (up to the 4th order), bearing precessional nodes over the thickness of the film. Furthermore, the effects of magnetic material properties, film thickness, and magnetic fields on the spin-wave spectrum are determined experimentally. Our experimental results are consistent with numerical calculations from a micromagnetic theory even on these so-far unexplored time- and length scales.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"234 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142487358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring anti-ferroelectric thin films with high energy storage performance by moderating phase transition","authors":"Tianfu Zhang, Yangyang Si, Xudong Li, Yijie Li, Tao Wang, Qinghua Zhang, Yunlong Tang, Zuhuang Chen","doi":"10.1063/5.0226576","DOIUrl":"https://doi.org/10.1063/5.0226576","url":null,"abstract":"Anti-ferroelectric thin films are renowned for their signature double hysteresis loops and sheds light on the distinguished energy storage capabilities of dielectric capacitors in modern electronic devices. However, anti-ferroelectric capacitors are still facing the dual challenges of low energy density and efficiency to achieve state-of-the-art performance. Their large hysteresis and sharp first-order phase transition usually results in a low energy storage efficiency and easy breakdown, severely obscuring its future application. In this study, we demonstrate that anti-ferroelectric (Pb0.97La0.02)(Zr1−xSnx)O3 epitaxial thin films exhibit enhanced energy storage performance through local structural heterogeneity to moderate the first-order phase transition by calculating the corresponding polarization as a function of switching time for the first time. The films exhibit remarkable enhanced breakdown strength (∼3.47 MV/cm, ∼5 times the value for PbZrO3) and energy storage performance. Our endeavors have culminated in the ingenious formulation of a novel strategy, namely, the postponement of polarization processes, thereby elevating the breakdown strength and total energy storage performance. This landmark achievement has unveiled a fresh vista of investigative opportunities for advancing the energy storage prowess of electric dielectrics.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"30 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142487197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"2D layered halide perovskite for field-effect transistors","authors":"Tufan Paul, Silvia Colella, Emanuele Orgiu","doi":"10.1063/5.0206658","DOIUrl":"https://doi.org/10.1063/5.0206658","url":null,"abstract":"Field-effect transistors are crucial components for modern electronics, generating significant research and profitable interest. Metal halide perovskites have recently emerged as a pioneering active material in solar cells, generating interest in their potential use in other electronic and (opto)electronic devices, including field-effect transistors and phototransistors. However, before they can be commercialized, they still face significant challenges owing to their immanent instabilities with respect to heat, moisture, and light. In contrast, due to their exceptional environmental stability, the newly emerging two-dimensional Ruddlesden–Popper type perovskites have garnered significant recognition. The current state of the field is covered in this review article, as are the problems, and a perspective for the scenarios of perovskite field-effect transistors. The effects of temperature, light, and measurement conditions are taken into account, as well as the physics of the device and the fundamental mechanisms that drive these devices, such as ion migration and ionic defects. Subsequently, the performance of perovskite transistors and phototransistors described so far is analyzed and critically evaluated. Finally, the major roadblocks to perovskite transistor advancement are identified and explored. The lessons learned from other perovskite optoelectronic devices are investigated in order to address these obstacles and bring these devices closer to industrial implementation.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"75 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142486504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On the study of proximity magnetism in van der Waals graphene/CuCrP2S6 heterostructure via the anomalous Hall effect","authors":"Yuriy Dedkov, Elena Voloshina","doi":"10.1063/5.0223563","DOIUrl":"https://doi.org/10.1063/5.0223563","url":null,"abstract":"Recently, several experimental works have appeared in the literature where induced magnetism in single- and few-layer graphene (SL-gr and FL-gr) interfaced with layered van der Waals materials was investigated via the application of the anomalous Hall effect (AHE). In most of these works, it is suggested that the observation of the AHE in such systems can be explained by a magnetic exchange interaction appearing at the interface between graphene and the underlying magnetic insulator. Considering the recently studied FL-graphene/bulk-CuCrP2S6 system as an example, our careful and rigorous analysis of recent experimental and theoretical data presented in the literature shows that the claimed observation of the AHE and magnetic proximity effect in this system is not supported. Moreover, the theoretically calculated electronic structures of the studied system contain serious errors and flaws that cannot be considered as an accurate description of such an interface and cannot be taken as solid support for the proposed proximity effect.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"19 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142448458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photonic Ising machines for combinatorial optimization problems","authors":"Yuan Gao, Guanyu Chen, Luo Qi, Wujie Fu, Zifeng Yuan, Aaron J. Danner","doi":"10.1063/5.0216656","DOIUrl":"https://doi.org/10.1063/5.0216656","url":null,"abstract":"The demand for efficient solvers of complicated combinatorial optimization problems, especially those classified as NP-complete or NP-hard, has recently led to increased exploration of novel computing architectures. One prominent collective state computing paradigm embodied in the so-called Ising machines has recently attracted considerable research attention due to its ability to optimize complex problems with large numbers of interacting variables. Ising model-inspired solvers, thus named due to mathematical similarities to the well-known model from solid-state physics, represent a promising alternative to traditional von Neumann computer architectures due to their high degree of inherent parallelism. While there are many possible physical realizations of Ising solvers, just as there are many possible implementations of any binary computer, photonic Ising machines (PIMs) use primarily optical components for computation, taking advantage of features like lower power consumption, fast calculation speeds, the leveraging of physical optics to perform the calculations themselves, possessing decent scalability and noise tolerance. Photonic computing in the form of PIMs may offer certain computational advantages that are not easily achieved with non-photonic approaches and is nonetheless an altogether fascinating application of photonics to computing. In this review, we provide an overview of Ising machines generally, introducing why they are useful, what types of problems they can tackle, and how different Ising solvers can be compared and benchmarked. We delineate their various operational mechanisms, advantages, and limitations vis-à-vis non-photonic Ising machines. We describe their scalability, interconnectivity, performance, and physical dimensions. As research in PIMs continues to progress, there is a potential that photonic computing could well emerge as a way to handle large and challenging optimization problems across diverse domains. This review serves as a comprehensive resource for researchers and practitioners interested in understanding capabilities and potential of PIMs in addressing such complex optimization problems.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"56 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142436309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Novel dopant-free ferromagnetic Mott-like insulator and high-energy correlated-plasmons in unconventional strongly correlated s band of low-dimensional gold","authors":"Muhammad Avicenna Naradipa, Angga Dito Fauzi, Bin Leong Ong, Muhammad Aziz Majidi, Caozheng Diao, Ganesh Ji Omar, Ariando Ariando, Mark B. H. Breese, Eng Soon Tok, Andrivo Rusydi","doi":"10.1063/5.0177314","DOIUrl":"https://doi.org/10.1063/5.0177314","url":null,"abstract":"Ferromagnetic insulators and plasmons have attracted a lot of interest due to their rich fundamental science and applications. Recent research efforts have been made to find dopant-free ferromagnetic insulators and unconventional plasmons independently both in strongly correlated electron systems. However, our understanding of them is still lacking. Existing dopant-free ferromagnetic insulator materials are mostly limited to complex d- or f-systems with extremely low Curie temperature, low-symmetry structure, and strict growth conditions on specific substrates, limiting their compatibility with industrial applications. Unconventional plasmon is, on the other hand, a quasiparticle that originates from the collective excitation of correlated-charges, yet they are rarely explored, particularly in ferromagnetic insulator materials. Herewith, we present a novel, room temperature dopant-free ferromagnetic Mott-like insulator with a high-symmetry structure in unconventional strongly correlated s band of low-dimensional highly oriented single-crystal gold quantum dots (HOSG-QDs) on MgO(001). Interestingly, HOSG-QDs show new high-energy correlated-plasmons with low-plasmonics-loss. With a series of state-of-the-art experimental techniques, we find that the Mott-insulating state is tunable with surprisingly strong spin-splitting and spin polarization accompanied by strong s–s transitions, disappearance of Drude response, and generating new Mott-like gap. Supported with a series of theoretical calculations, the interplay of quantum confinement, many-body electronic correlations, and hybridizations tunes electron–electron correlations in s band and determines the ferromagnetism, Mott-like insulator, and high-energy correlated-plasmons. Our result shows a new class of room temperature dopant-free ferromagnetic Mott-like insulator and high-energy correlated-plasmons with low-loss in strongly correlated s band and opens unexplored applications of low-dimensional gold in spin field-effect transistors and plasmonics.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"13 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142436310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unconventional exchange bias and enhanced spin pumping efficiency due to diluted magnetic oxide at the Co/ZnO interface","authors":"Xiaoqi Liao, Chunmei Wang, Duo Zhao, Wei Tang, Huawei Liang, Yu-Jia Zeng, Chris Van Haesendonck, Qinghai Song, Haoliang Liu","doi":"10.1063/5.0209098","DOIUrl":"https://doi.org/10.1063/5.0209098","url":null,"abstract":"Exchange bias (EB) is normally created by the interfacial exchange coupling at a ferromagnetic/antiferromagnetic (FM/AFM) interface. FM/AFM interfaces have also been proved to perform enhanced spin angular momentum transfer efficiency in spin pumping (SP), compared with typical FM/nonmagnetic interfaces. Here, we report an unexpected EB and enhanced SP between a ferromagnet and semiconductor. Considerable EB has been observed in Co films grown on ZnO single crystal due to the interface antiferromagnetism of the Zn1−xCoxO (x depends on the Co solubility limit in ZnO) layer. Moreover, SP measurements demonstrate a giant spin pumping efficiency at the Co/ZnO interface with a bump (spin mixing conductance Geff↑↓= 28 nm−2) around the blocking temperature TB ∼ 75 K. The enhanced SP is further confirmed by inverse spin Hall effect measurements and the spin Hall angle θISHE of Zn1−xCoxO is estimated to be 0.011. The bound magnetic polarons with s–d exchange interaction between donor electrons and magnetic cation ions in Zn1−xCoxO play a key role in the formation of antiferromagnetism with giant Geff↑↓. Our work provides a new insight into spin physics at FM/semiconducting interfaces.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"32 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142398304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Inhibiting the current spikes within the channel layer of LiCoO2-based three-terminal synaptic transistors","authors":"Yue Chen, Weijian Zhang, Yuezhen Lu, Minzhen Chen, Jing Chen, Hongyi Lu, Yubiao Niu, Guiying Zhao, Jianming Tao, Jiaxin Li, Yingbin Lin, Oleg Kolosov, Zhigao Huang","doi":"10.1063/5.0200811","DOIUrl":"https://doi.org/10.1063/5.0200811","url":null,"abstract":"Synaptic transistors, which emulate the behavior of biological synapses, play a vital role in information processing and storage in neuromorphic systems. However, the occurrence of excessive current spikes during the updating of synaptic weight poses challenges to the stability, accuracy, and power consumption of synaptic transistors. In this work, we experimentally investigate the main factors for the generation of current spikes in the three-terminal synaptic transistors that use LiCoO2 (LCO), a mixed ionic-electronic conductor, as the channel layer. Kelvin probe force microscopy and impedance testing results reveal that ion migration and adsorption at the drain–source-channel interface cause the current spikes that compromise the device's performance. By controlling the crystal orientation of the LCO channel layer to impede the in-plane migration of lithium ions, we show that the LCO channel layer with the (104) preferred orientation can effectively suppress both the peak current and power consumption in the synaptic transistors. Our study provides a unique insight into controlling the crystallographic orientation for the design of high-speed, high-robustness, and low-power consumption nano-memristor devices.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"207 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142398306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Oxygen vacancy order–disorder transition process during topotactic filament formation in a perovskite oxide tracked by Raman microscopy and transmission electron microscopy","authors":"Heung-Sik Park, Jinhyuk Jang, Ji Soo Lim, Jeonghun Suh, Si-Young Choi, Chan-Ho Yang","doi":"10.1063/5.0212526","DOIUrl":"https://doi.org/10.1063/5.0212526","url":null,"abstract":"Vacancy-ordered perovskite oxides are attracting attention due to their diverse functions such as resistive switching, electrocatalytic activity, oxygen diffusivity, and ferroelectricity. It is important to clarify the chemical lattice strains arising from compositional changes and the associated vacancy order–disorder phase transitions at the atomic scale. Here, we elucidate the intermediate process of a topotactic phase transition in Ca-doped bismuth ferrite films consisting of alternating stacks of oxygen perovskite layers and a brownmillerite-type oxygen vacancy layer. We use Raman spectroscopy and transmission electron microscopy to closely examine the evolution of local strains exerted on the constituent sub-layers by electrochemical oxidation. A negative Raman chemical shift is observed during oxidation, which is linearly correlated with the local negative chemical expansivity of the oxygen layer. It seemingly contradicts with the general trend that oxides undergo lattice contraction upon oxidation. Oxygen vacancies initially confined in the vacancy layers can be understood to diffuse into the oxygen layers during melting of the ordered structure. The finding deepens our understanding of the electro-chemo-mechanical coupling of vacancy-ordered oxides.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"16 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142398302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}