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Microgrooves with low-index facets in halide vapor deposited (001) β-Ga2O3: origin of reverse leakage current in Schottky barrier diodes observed by high-sensitive emission microscopy and synchrotron X-ray topography 卤化物气相沉积 (001) β-Ga2O3 中具有低指数刻面的微凹槽：通过高灵敏发射显微镜和同步辐射 X 射线形貌图观察肖特基势垒二极管中反向漏电流的起源
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-07-16 DOI: 10.35848/1882-0786/ad5bbe
Makoto Kasu, Yuto Otsubo, Sayleap Sdoeung, Masanori Eguchi, Niloy Chandra Saha, Toshiyuki Oishi, Kohei Sasaki, Chia-Hung Lin, Jun Arima, Katsumi Kawasaki and Jun Hirabayashi
{"title":"Microgrooves with low-index facets in halide vapor deposited (001) β-Ga2O3: origin of reverse leakage current in Schottky barrier diodes observed by high-sensitive emission microscopy and synchrotron X-ray topography","authors":"Makoto Kasu, Yuto Otsubo, Sayleap Sdoeung, Masanori Eguchi, Niloy Chandra Saha, Toshiyuki Oishi, Kohei Sasaki, Chia-Hung Lin, Jun Arima, Katsumi Kawasaki and Jun Hirabayashi","doi":"10.35848/1882-0786/ad5bbe","DOIUrl":"https://doi.org/10.35848/1882-0786/ad5bbe","url":null,"abstract":"We have found microgrooves on the (001) β-Ga2O3 epitaxial deposited by halide vapor-phase epitaxy in Schottky barrier diodes to be killer defects at the point of reverse leakage-current flow [−10.0 μA at −64 V]. The microgrooves tended to align in the [010] direction and each microgroove consisted of (100), (001), and ( 02) low-index microfacets. The microgrooves were accompanied by polycrystalline defects on the [ 00] side. The electric field at the bottom of the microgrooves reached 5.27 × 105 V cm−1 at 50 V, which is approximately twice that of the flat surface.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"11 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141741514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor 具有超低理想系数的 600 V 以上侧向 AlN-on-AlN 肖特基势垒二极管
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-07-10 DOI: 10.35848/1882-0786/ad5e5a
Dinusha Herath Mudiyanselage, Dawei Wang, Bingcheng Da, Ziyi He and Houqiang Fu
{"title":"Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor","authors":"Dinusha Herath Mudiyanselage, Dawei Wang, Bingcheng Da, Ziyi He and Houqiang Fu","doi":"10.35848/1882-0786/ad5e5a","DOIUrl":"https://doi.org/10.35848/1882-0786/ad5e5a","url":null,"abstract":"This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic CVD (MOCVD) with an ultra-low ideality factor (η) of 1.65, a high Schottky barrier height of 1.94 eV, a breakdown voltage (BV) of 640 V, and a record high normalized BV by the anode-to-cathode distance. The device current was dominated by thermionic emission, while most previously reported AlN SBDs suffered from defect-induced current with higher η (>4). This work represents a significant step towards high-performance ultra-wide bandgap AlN-based high-voltage and high-power devices.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"57 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141608776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra-thin optical power converters based on Gires–Tournois resonator configuration operating in high-order modes 基于以高阶模式运行的 Gires-Tournois 谐振器配置的超薄光功率转换器
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-07-10 DOI: 10.35848/1882-0786/ad59f5
Zongkun Zhang, Dongjie Zhou, Chong Tan, Qianli Qiu, Huiyong Deng, Ning Dai and Jiaming Hao
{"title":"Ultra-thin optical power converters based on Gires–Tournois resonator configuration operating in high-order modes","authors":"Zongkun Zhang, Dongjie Zhou, Chong Tan, Qianli Qiu, Huiyong Deng, Ning Dai and Jiaming Hao","doi":"10.35848/1882-0786/ad59f5","DOIUrl":"https://doi.org/10.35848/1882-0786/ad59f5","url":null,"abstract":"In this study, we propose a strategy to construct high-performance ultra-thin optical power converters (OPCs) based on Gires–Tournois resonator configurations operating in high-order modes. Despite reducing the absorber thickness by 5.8 to 8.1 times, the proposed ultra-thin OPCs exhibit the same (comparable) energy absorption characteristic and demonstrate superior electrical performance compared to a thick OPC. It is revealed that such high absorption effects originated from the excitation of optical asymmetric Fabry–Perot-type high-order inference resonance modes and the electrical performance enhancement can be attributed to the reduction of the absorber thickness.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"45 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141608699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal conductivity of BaZrO3 and KTaO3 single crystals BaZrO3 和 KTaO3 单晶体的导热性
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-07-10 DOI: 10.35848/1882-0786/ad5c26
Makoto Tachibana, Cédric Bourgès and Takao Mori
{"title":"Thermal conductivity of BaZrO3 and KTaO3 single crystals","authors":"Makoto Tachibana, Cédric Bourgès and Takao Mori","doi":"10.35848/1882-0786/ad5c26","DOIUrl":"https://doi.org/10.35848/1882-0786/ad5c26","url":null,"abstract":"BaZrO3 and KTaO3 are two rare examples of perovskite oxides that retain the ideal cubic structure down to the lowest temperature. In this paper, we report thermal conductivity (κ) between 300 and 773 K on single crystals of these compounds. For BaZrO3, the κ of 7.5 Wm−1K−1 at 300 K is ∼40% larger than the previously reported polycrystalline values. For KTaO3, our value of 13.1 Wm−1K−1 at 300 K clarifies the sources of error in some of the previously reported data. These results underscore the importance of high-quality experimental data in benchmarking the accuracy of advanced first-principles κ calculations.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"12 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141608698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Room temperature optical coupling of neodymium ions to photonic crystal L3 cavity in gallium nitride semiconductor 氮化镓半导体中钕离子与光子晶体 L3 腔的室温光学耦合
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-07-09 DOI: 10.35848/1882-0786/ad5bbd
Shin-ichiro Sato, Takao Oto
{"title":"Room temperature optical coupling of neodymium ions to photonic crystal L3 cavity in gallium nitride semiconductor","authors":"Shin-ichiro Sato, Takao Oto","doi":"10.35848/1882-0786/ad5bbd","DOIUrl":"https://doi.org/10.35848/1882-0786/ad5bbd","url":null,"abstract":"We demonstrate the optical coupling of implanted neodymium (Nd) ions in a photonic crystal (PhC)-L3 cavity on GaN at RT. The structure of the PhC-L3 cavity is designed by the electromagnetic field simulation to enhance the <sup>4</sup>\u0000<italic toggle=\"yes\">F</italic>\u0000<sub>3/2</sub>–<sup>4</sup>\u0000<italic toggle=\"yes\">I</italic>\u0000<sub>9/2</sub> and <sup>4</sup>\u0000<italic toggle=\"yes\">F</italic>\u0000<sub>3/2</sub>–<sup>4</sup>\u0000<italic toggle=\"yes\">I</italic>\u0000<sub>11/2</sub> transitions (916 and 1107 nm) in Nd<sup>3+</sup>. The highest enhancement ratio of 20-fold is achieved under our measurement conditions by the enhancement of spontaneous emission rate due to the Purcell effect in addition to the improvement of light collection efficiency. These results pave the way for the development of Ln-doped GaN based quantum light–matter interface and nanophotonics.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"49 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141571859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications 采用无金 Ti/Al/Ni/Ti 欧姆触点的高线性度 AlGaN/GaN HEMT，适用于 Ka 波段应用
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-06-30 DOI: 10.35848/1882-0786/ad5949
Che-Wei Hsu, Yueh-Chin Lin, Shao-Lun Lee, Kai-Wen Chen, Ying-Ciao Chen and Edward Yi Chang
{"title":"High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications","authors":"Che-Wei Hsu, Yueh-Chin Lin, Shao-Lun Lee, Kai-Wen Chen, Ying-Ciao Chen and Edward Yi Chang","doi":"10.35848/1882-0786/ad5949","DOIUrl":"https://doi.org/10.35848/1882-0786/ad5949","url":null,"abstract":"In this study, AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts were fabricated. The device presents a contact resistance (Rc) of 0.64 Ω·mm and high linearity characteristics. The two-tone measurement at 28 GHz shows that the 2 × 50 μm device exhibits an excellent third-order intercept point (OIP3) value of 41.64 dBm at VDS = 28 V, and an OIP3/PDC of 24.2. An OIP3 of 46.59 dBm was achieved when the device’s gate width was increased to 8 × 50 μm at VDS = 48 V. These results demonstrate that AlGaN/GaN HEMTs with Ti/Al/Ni/Ti ohmic contacts have potential for Ka-band applications.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"20 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141510216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Blue-emitting perovskite nanocrystals with enhanced optical properties through using NaBH4 利用 NaBH4 增强光学特性的蓝色发光过氧化物纳米晶体
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-06-27 DOI: 10.35848/1882-0786/ad52e6
Mao Goto, Naoaki Oshita, Kenshin Yoshida, Takuro Iizuka, Yusaku Morikawa, Hiroto Shimizu, Ryota Kobayashi, Takayuki Chiba, Satoshi Asakura and Akito Masuhara
{"title":"Blue-emitting perovskite nanocrystals with enhanced optical properties through using NaBH4","authors":"Mao Goto, Naoaki Oshita, Kenshin Yoshida, Takuro Iizuka, Yusaku Morikawa, Hiroto Shimizu, Ryota Kobayashi, Takayuki Chiba, Satoshi Asakura and Akito Masuhara","doi":"10.35848/1882-0786/ad52e6","DOIUrl":"https://doi.org/10.35848/1882-0786/ad52e6","url":null,"abstract":"APbX3-type [A = CH3NH3+ (MA+), NH2CH=NH2+ (FA+), X = Cl–, Br–, I–] organic–inorganic perovskite nanocrystals (PeNCs) have superior optical properties, such as emission with a narrow full width at half maximum and emission color tunability over the entire visible range. However, blue-emitting PeNCs [APb(Br/Cl)3] exhibit low photoluminescence quantum yields owing to Cl defects, hindering their practical applications. The Cl defects induce nonradiative recombination caused by the trap levels formed deep in the band gap. Herein, we report the preparation of blue-emitting PeNCs that exhibit excellent optical properties by using NaBH4 to decrease the number of Cl defects.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"360 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141530011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
783 MHz fundamental repetition rate all-fiber ring laser mode-locked by carbon nanotubes 由碳纳米管锁模的 783 MHz 基本重复率全光纤环形激光器
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-06-17 DOI: 10.35848/1882-0786/ad548f
Maolin Dai, Bowen Liu, Yifan Ma, Takuma Shirahata, Ruoao Yang, Zhigang Zhang, Sze Yun Set and Shinji Yamashita
{"title":"783 MHz fundamental repetition rate all-fiber ring laser mode-locked by carbon nanotubes","authors":"Maolin Dai, Bowen Liu, Yifan Ma, Takuma Shirahata, Ruoao Yang, Zhigang Zhang, Sze Yun Set and Shinji Yamashita","doi":"10.35848/1882-0786/ad548f","DOIUrl":"https://doi.org/10.35848/1882-0786/ad548f","url":null,"abstract":"We demonstrate a 783 MHz fundamental repetition rate mode-locked Er-doped all-fiber ring laser with a pulse width of 623 fs. By using carbon nanotubes saturable absorber, a relatively low self-starting pump threshold of 108 mW is achieved. The laser has a very compact footprint less than 10 cm × 10 cm, benefiting from the all-active-fiber cavity design. The robust mode-locking is confirmed by the low relative intensity noise and a long-term stability test. We propose a new scheme for generating high repetition rate femtosecond optical pulses from a compact and stable all-active-fiber ring oscillator.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"20 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141522999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Surface and interface physics driven by quantum materials 量子材料驱动的表面和界面物理学
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-06-07 DOI: 10.35848/1882-0786/ad4468
Shuji Hasegawa
{"title":"Surface and interface physics driven by quantum materials","authors":"Shuji Hasegawa","doi":"10.35848/1882-0786/ad4468","DOIUrl":"https://doi.org/10.35848/1882-0786/ad4468","url":null,"abstract":"Electronic states at the boundaries of crystals, such as surfaces, interfaces, edges, hinges, corners, and extremities, play crucial roles in emerging quantum materials, such as graphene and similar monatomic-layer materials, van der Waals crystals, and topological insulators. Electronic states at such boundaries are different from those inside the three- or two-dimensional crystals, not only because of the truncation of crystal lattices but also because of space-inversion-symmetry breaking and difference in topology in band structures across the boundaries. Such quantum materials are expected to advance energy-saving/-harvesting technology as well as quantum computing/information technology because of exotic phenomena, such as spin–momentum locking of an electron, pure spin current, dissipation-less charge current, nonreciprocal current, and possible Majorana fermions. In this review, their fundamental concepts are introduced from the viewpoint of surface physics, in which atomic and electronic structures, as well as charge/spin transport properties, are directly probed using state-of-the-art techniques.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"1 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141550957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Oxygen-related defects in 4H-SiC from first principles 从第一原理看 4H-SiC 中的氧相关缺陷
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-05-23 DOI: 10.35848/1882-0786/ad45ae
Sosuke Iwamoto, Takayoshi Shimura, Heiji Watanabe and Takuma Kobayashi
{"title":"Oxygen-related defects in 4H-SiC from first principles","authors":"Sosuke Iwamoto, Takayoshi Shimura, Heiji Watanabe and Takuma Kobayashi","doi":"10.35848/1882-0786/ad45ae","DOIUrl":"https://doi.org/10.35848/1882-0786/ad45ae","url":null,"abstract":"We investigated the abundance, structures, energy levels, and spin states of oxygen-related defects in 4H-SiC on the basis of first-principles calculations. We applied a hybrid functional in the overall calculations, which gives reliable defect properties, and also considered relevant defect charge states. We identified the oxygen interstitial (Oi,1), substitutional oxygen (OC), and oxygen-vacancy (OCVSi) complex as prominent defects in n-type conditions. Among them, OCVSi was predicted as a spin-1 defect with NIR emission in a previous study. On the basis of the obtained results, we discuss the possible spin decoherence sources when employing OCVSi as a spin-to-photon interface.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"87 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141152333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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