Room temperature optical coupling of neodymium ions to photonic crystal L3 cavity in gallium nitride semiconductor

Abstract

We demonstrate the optical coupling of implanted neodymium (Nd) ions in a photonic crystal (PhC)-L3 cavity on GaN at RT. The structure of the PhC-L3 cavity is designed by the electromagnetic field simulation to enhance the ⁴ F _3/2–⁴ I _9/2 and ⁴ F _3/2–⁴ I _11/2 transitions (916 and 1107 nm) in Nd³⁺. The highest enhancement ratio of 20-fold is achieved under our measurement conditions by the enhancement of spontaneous emission rate due to the Purcell effect in addition to the improvement of light collection efficiency. These results pave the way for the development of Ln-doped GaN based quantum light–matter interface and nanophotonics.