具有超低理想系数的 600 V 以上侧向 AlN-on-AlN 肖特基势垒二极管

IF 2.3 4区物理与天体物理 Q3 PHYSICS, APPLIED

Applied Physics Express Pub Date : 2024-07-10 DOI:10.35848/1882-0786/ad5e5a

Dinusha Herath Mudiyanselage, Dawei Wang, Bingcheng Da, Ziyi He and Houqiang Fu

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引用次数: 0

摘要

这封信报告了通过金属有机化学气相沉积 (MOCVD) 技术在单晶氮化铝基底上演示的横向氮化铝肖特基势垒二极管 (SBD)，其理想度系数 (η)为 1.65，肖特基势垒高度为 1.94 eV，击穿电压 (BV) 为 640 V，按阳极到阴极距离归一化的 BV 为创纪录的高值。器件电流主要由热离子发射产生，而之前报道的大多数 AlN SBD 器件都存在较高η（>4）的缺陷诱导电流。这项工作标志着向高性能超宽带隙氮化铝基高压和大功率器件迈出了重要一步。

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Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor

This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic CVD (MOCVD) with an ultra-low ideality factor (η) of 1.65, a high Schottky barrier height of 1.94 eV, a breakdown voltage (BV) of 640 V, and a record high normalized BV by the anode-to-cathode distance. The device current was dominated by thermionic emission, while most previously reported AlN SBDs suffered from defect-induced current with higher η (>4). This work represents a significant step towards high-performance ultra-wide bandgap AlN-based high-voltage and high-power devices.

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来源期刊

Applied Physics Express 物理-物理：应用

CiteScore

4.80

自引率

8.70%

发文量

310

审稿时长

1.2 months

期刊介绍： Applied Physics Express (APEX) is a letters journal devoted solely to rapid dissemination of up-to-date and concise reports on new findings in applied physics. The motto of APEX is high scientific quality and prompt publication. APEX is a sister journal of the Japanese Journal of Applied Physics (JJAP) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).