发布求助
文献互助 智能选刊 最新文献

Applied Physics Express最新文献

筛选
英文 中文
Suppression of stacking-fault expansion in 4H-SiC diodes by helium implantation 通过氦植入抑制 4H-SiC 二极管的堆叠故障扩展
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-08-20 DOI: 10.35848/1882-0786/ad6be5
Tong Li, Hitoshi Sakane, Shunta Harada, Masashi Kato
{"title":"Suppression of stacking-fault expansion in 4H-SiC diodes by helium implantation","authors":"Tong Li, Hitoshi Sakane, Shunta Harada, Masashi Kato","doi":"10.35848/1882-0786/ad6be5","DOIUrl":"https://doi.org/10.35848/1882-0786/ad6be5","url":null,"abstract":"Bipolar degradation is a critical problem in Silicon carbide devices, caused by the expansion of single Shockley stacking faults (1SSFs) from basal plane dislocations. This paper presents the effects of helium implantation on the suppression of 1SSFs expansion. The fabricated PiN diodes were analyzed using current–voltage characteristics and electroluminescence imaging. The results show that helium implantation can effectively suppress 1SSFs expansion without significantly degrading diode performance. We consider that this suppression is due to the pinning of dislocations by point defects introduced during helium implantation, and the reduction of carrier lifetime may also play a role in suppressing 1SSFs expansion.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"2 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142198267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Stratified polymer dissolution model based on impedance data from quartz crystal microbalance method 基于石英晶体微天平法阻抗数据的分层聚合物溶解模型
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-08-20 DOI: 10.35848/1882-0786/ad6ad0
Yuqing Jin, Yuko Tsutsui Ito, Takahiro Kozawa, Takashi Hasebe, Kazuo Sakamoto, Makoto Muramatsu
{"title":"Stratified polymer dissolution model based on impedance data from quartz crystal microbalance method","authors":"Yuqing Jin, Yuko Tsutsui Ito, Takahiro Kozawa, Takashi Hasebe, Kazuo Sakamoto, Makoto Muramatsu","doi":"10.35848/1882-0786/ad6ad0","DOIUrl":"https://doi.org/10.35848/1882-0786/ad6ad0","url":null,"abstract":"In lithography, the development process is essential for achieving high fidelity. The quartz crystal microbalance (QCM) method is a primary tool for analyzing the dissolution kinetics of resist polymers by measuring their frequency and impedance. However, impedance charts are underutilized. We propose a stratified polymer dissolution model (SPDM) to simulate polymer dissolution in developers and analyze QCM charts. Using SPDM, we accurately reproduced both the frequency and impedance charts. The feature values describing the dissolution kinetics were successfully extracted from the QCM charts, enabling the investigation of the effects of developers on dissolution kinetics.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"28 16 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142198463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A tunable high-order micro-perforated panel metamaterial with low-frequency broadband acoustic absorption 具有低频宽带吸声性能的可调谐高阶微穿孔板超材料
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-08-20 DOI: 10.35848/1882-0786/ad6956
Chongrui Liu, Xiaoli Liu, Zexiang Xie, Jiu Hui Wu, Fuyin Ma
{"title":"A tunable high-order micro-perforated panel metamaterial with low-frequency broadband acoustic absorption","authors":"Chongrui Liu, Xiaoli Liu, Zexiang Xie, Jiu Hui Wu, Fuyin Ma","doi":"10.35848/1882-0786/ad6956","DOIUrl":"https://doi.org/10.35848/1882-0786/ad6956","url":null,"abstract":"We proposed a tunable high-order micro-perforated panel metamaterial for broadband absorption, in which the energy dissipation modes is reconstructed by the cavity partition plates. Owing to the more degrees of freedom in impedance design, the metamaterial not only obtains multiple perfect absorption peaks with broader bandwidth, but also allows for flexible frequency regulations. By coupling 12 high-order cells, the metamaterial finally achieves a smooth spectrum with 94% average absorption across the range of 300–3200 Hz, which is verified by the simulation and experiment. This metamaterial could have great applications in noise control engineering owing to the extraordinary performance.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"6 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142198464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spatial and temporal thermal management of a spintronic terahertz emitter 自旋电子太赫兹发射器的空间和时间热管理
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-08-12 DOI: 10.35848/1882-0786/ad6955
Gabriel Gandubert, Joel Edouard Nkeck, Xavier Ropagnol, Denis Morris, François Blanchard
{"title":"Spatial and temporal thermal management of a spintronic terahertz emitter","authors":"Gabriel Gandubert, Joel Edouard Nkeck, Xavier Ropagnol, Denis Morris, François Blanchard","doi":"10.35848/1882-0786/ad6955","DOIUrl":"https://doi.org/10.35848/1882-0786/ad6955","url":null,"abstract":"This work presents methods for addressing undesirable thermal effects induced by the pump beam of an oscillator laser to improve the efficiency of a terahertz (THz) spintronic emitter. We explore two approaches: spatial distribution of pump energy using a 2D lens array and temporal modulation of the pump duty cycle. Optimizing the spatial distribution approximately doubles the THz signal by increasing local heat dissipation, delaying the saturation limit. Similarly, temporal spreading of pump pulses by adjusting the duty cycle allows greater thermal relaxation within the heterostructure, enhancing the overall efficiency of THz wave generation.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"12 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142225286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microscopic mechanisms of nitrogen doping in silicon carbide during epitaxial growth 碳化硅外延生长过程中氮掺杂的微观机制
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-08-12 DOI: 10.35848/1882-0786/ad524c
Souichiro Yamauchi, Ichiro Mizushima, Takashi Yoda, Atsushi Oshiyama, Kenji Shiraishi
{"title":"Microscopic mechanisms of nitrogen doping in silicon carbide during epitaxial growth","authors":"Souichiro Yamauchi, Ichiro Mizushima, Takashi Yoda, Atsushi Oshiyama, Kenji Shiraishi","doi":"10.35848/1882-0786/ad524c","DOIUrl":"https://doi.org/10.35848/1882-0786/ad524c","url":null,"abstract":"We report first-principles calculations that unveil elementary processes of nitrogen donor doping during epitaxial growth of silicon carbide (SiC). We find that a N<sub>2</sub> molecule adsorbed on the terrace migrates to a particular step edge where under-coordinated Si atoms appear, or is directly adsorbed near the step edge, and then dissociated there via the step-molecule interaction. This results in the N atom being eventually incorporated at the C substitutional site of the step. The calculated energy barriers indicate that the N incorporation reactions at the step edges occur at a typically high temperature in SiC epitaxial growth.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"27 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142225285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra-high electron mobility in Sn-doped two-dimensional Ga2O3 modified by biaxial strain and electric field 双轴应变和电场修饰的掺锡二维 Ga2O3 中的超高电子迁移率
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-08-06 DOI: 10.35848/1882-0786/ad65b4
H Zeng, C Ma and M Wu
{"title":"Ultra-high electron mobility in Sn-doped two-dimensional Ga2O3 modified by biaxial strain and electric field","authors":"H Zeng, C Ma and M Wu","doi":"10.35848/1882-0786/ad65b4","DOIUrl":"https://doi.org/10.35848/1882-0786/ad65b4","url":null,"abstract":"2D Ga2O3 exhibits overwhelming advantages over its bulk counterpart, whereas manipulating the carriers is rare. We report strain-dependent electronic structures and transport properties of Sn-doped 2D Ga2O3 using first-principles calculations with deformation potential theory. The band gaps are tunable from 2.23 eV to 1.20 eV due to the strain-mediated σ* anti-bonding and π bonding state variations. Specifically, ultra-high electron mobility of 22579.32 cm2V−1s−1 is predicated under 8% tensile. Further electric field modulations suggest the retaining of band gap and effective mass. These results highlight its property manipulations and nanoscale electronic applications.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"19 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141930699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Circularly polarized plane terahertz waves radiated from a resonant tunneling diode integrated with a collimating metalens and quarter-wave plate 从集成了准直金属片和四分之一波板的共振隧道二极管辐射出的圆偏振平面太赫兹波
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-08-04 DOI: 10.35848/1882-0786/ad52e5
Takehito Suzuki, Kota Endo, Takahito Haruishi, Kazuisao Tsuruda, Kouhei Urashima and Shunji Yamamori
{"title":"Circularly polarized plane terahertz waves radiated from a resonant tunneling diode integrated with a collimating metalens and quarter-wave plate","authors":"Takehito Suzuki, Kota Endo, Takahito Haruishi, Kazuisao Tsuruda, Kouhei Urashima and Shunji Yamamori","doi":"10.35848/1882-0786/ad52e5","DOIUrl":"https://doi.org/10.35848/1882-0786/ad52e5","url":null,"abstract":"Terahertz flat optics based on metasurfaces can replace massive optical components with optically thin components. However, metasurfaces with unprecedented material properties frequently produce a specified function, and terahertz flat optics has yet to be commonly adopted in terahertz devices that require multiple functions. Here, we present a two-layer component composed of a collimating metalens and a quarter-wave plate that convert linearly polarized terahertz wide-angle radiation waves from a resonant tunneling diode to circularly polarized plane waves. Our findings would be applied to laminate structures with optical vortices, ultrahigh directivity and arbitrary wavefront control in 6 G wireless communications.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"66 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141930700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination 在晶格匹配的 AlInN 层上形成具有反锥形边缘结构的 GaN 介面，以实现正斜边端接
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-07-31 DOI: 10.35848/1882-0786/ad64ba
Takayoshi Oshima, Masataka Imura, Yuichi Oshima
{"title":"Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination","authors":"Takayoshi Oshima, Masataka Imura, Yuichi Oshima","doi":"10.35848/1882-0786/ad64ba","DOIUrl":"https://doi.org/10.35848/1882-0786/ad64ba","url":null,"abstract":"GaN mesas were fabricated by sequential dry and wet etching of a +<italic toggle=\"yes\">c</italic>-oriented GaN layer onto a lattice-matched AlInN layer for future applications of positive beveled edge termination, which is desirable for preventing premature breakdown of power devices. The dry etching produced hexagonal AlInN/GaN mesas surrounded by <italic toggle=\"yes\">m</italic>-plane sidewalls with six protrusions at the vertices. The subsequent hot phosphoric acid etching selectively etched the AlInN layer to expose and etch the chemically unstable −<italic toggle=\"yes\">c</italic> surface of the GaN layer, which formed reverse-tapered {<inline-formula>\u0000<tex-math>\u0000<?CDATA $10bar{1}bar{2}$?>\u0000</tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mn>10</mml:mn><mml:mover accent=\"true\"><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mo>¯</mml:mo></mml:mover><mml:mover accent=\"true\"><mml:mrow><mml:mn>2</mml:mn></mml:mrow><mml:mo>¯</mml:mo></mml:mover></mml:math>\u0000<inline-graphic xlink:href=\"apexad64baieqn1.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula>} facets. The protrusions were sacrificed during the wet etching to prevent undesirable positive tapering at the vertices.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"36 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141872124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polarization-dependent photoluminescence of Ce-implanted MgO and MgAl2O4 氧化镁和氧化铝镁的偏振依赖性光致发光
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-07-18 DOI: 10.35848/1882-0786/ad59f4
Manato Kawahara, Yuichiro Abe, Koki Takano, F. Joseph Heremans, Jun Ishihara, Sean E. Sullivan, Christian Vorwerk, Vrindaa Somjit, Christopher P. Anderson, Gary Wolfowicz, Makoto Kohda, Shunsuke Fukami, Giulia Galli, David D. Awschalom, Hideo Ohno and Shun Kanai
{"title":"Polarization-dependent photoluminescence of Ce-implanted MgO and MgAl2O4","authors":"Manato Kawahara, Yuichiro Abe, Koki Takano, F. Joseph Heremans, Jun Ishihara, Sean E. Sullivan, Christian Vorwerk, Vrindaa Somjit, Christopher P. Anderson, Gary Wolfowicz, Makoto Kohda, Shunsuke Fukami, Giulia Galli, David D. Awschalom, Hideo Ohno and Shun Kanai","doi":"10.35848/1882-0786/ad59f4","DOIUrl":"https://doi.org/10.35848/1882-0786/ad59f4","url":null,"abstract":"Since the qubit’s performance of solid-state spin centers depends highly on the host material, spin centers using new host materials may offer new qubit applications. We investigate the optical properties of Ce-implanted MgO and MgAl2O4 as potential materials holding the optically accessible qubit. We find that the photoluminescence of Ce-implanted MgAl2O4 is more than 10 times brighter than that of Ce-implanted MgO and observe polarization-dependent emission of Ce center in MgAl2O4 with 2% at 4 K under 500 mT, suggesting that the properties required for initializing and reading the state of the spin qubit have been achieved.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"84 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141741512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fundamentals and recent advances of terahertz resonant tunneling diodes 太赫兹谐振隧穿二极管的基本原理和最新进展
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-07-18 DOI: 10.35848/1882-0786/ad5c27
Safumi Suzuki and Masahiro Asada
{"title":"Fundamentals and recent advances of terahertz resonant tunneling diodes","authors":"Safumi Suzuki and Masahiro Asada","doi":"10.35848/1882-0786/ad5c27","DOIUrl":"https://doi.org/10.35848/1882-0786/ad5c27","url":null,"abstract":"During the last two decades, rapid advancements in RT oscillators that use resonant tunneling diodes (RTDs) have been reported, with operations approaching the limits of electronic device oscillators. Although RTD devices are known for HF operation, milliwatt-level high-output powers have been recently obtained using a single device. Moreover, interesting operations using feedback and injection locking phenomena are also emerging. This paper outlines the basic oscillation principles, oscillation characteristics, and applications of RTD devices. Unlike previous reviews, the basic parts include harmonic signal generation, the construction of resonators and antennas, and bias circuits, which have been newly summarized. A graphical method for determining oscillation is introduced, and the oscillator characteristics are summarized in terms of new indicators, such as power density. This paper also includes the modulation characteristics of the intrinsic part of the device, spectral changes owing to feedback, and the characteristics of the RTD device as a receiver.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"1 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141741513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信