通过氦植入抑制 4H-SiC 二极管的堆叠故障扩展

IF 2.3 4区物理与天体物理 Q3 PHYSICS, APPLIED

Applied Physics Express Pub Date : 2024-08-20 DOI:10.35848/1882-0786/ad6be5

Tong Li, Hitoshi Sakane, Shunta Harada, Masashi Kato

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引用次数: 0

摘要

双极降解是碳化硅器件中的一个关键问题，它是由基底面位错引起的单肖克利堆叠断层（1SSF）扩展造成的。本文介绍了氦植入对抑制 1SSF 扩展的影响。利用电流-电压特性和电致发光成像分析了制作的 PiN 二极管。结果表明，氦植入能有效抑制 1SSFs 扩展，而不会明显降低二极管的性能。我们认为这种抑制作用是由于氦植入过程中引入的点缺陷对位错的钉扎作用，载流子寿命的缩短也可能在抑制 1SSFs 扩展方面起到一定作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Suppression of stacking-fault expansion in 4H-SiC diodes by helium implantation

Bipolar degradation is a critical problem in Silicon carbide devices, caused by the expansion of single Shockley stacking faults (1SSFs) from basal plane dislocations. This paper presents the effects of helium implantation on the suppression of 1SSFs expansion. The fabricated PiN diodes were analyzed using current–voltage characteristics and electroluminescence imaging. The results show that helium implantation can effectively suppress 1SSFs expansion without significantly degrading diode performance. We consider that this suppression is due to the pinning of dislocations by point defects introduced during helium implantation, and the reduction of carrier lifetime may also play a role in suppressing 1SSFs expansion.

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来源期刊

Applied Physics Express 物理-物理：应用

CiteScore

4.80

自引率

8.70%

发文量

310

审稿时长

1.2 months

期刊介绍： Applied Physics Express (APEX) is a letters journal devoted solely to rapid dissemination of up-to-date and concise reports on new findings in applied physics. The motto of APEX is high scientific quality and prompt publication. APEX is a sister journal of the Japanese Journal of Applied Physics (JJAP) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).