APL Materials最新文献_第7页

Structural and magnetic properties of molecular beam epitaxy (MnSb2Te4)x(Sb2Te3)1−x topological materials with exceedingly high Curie temperature 具有超高居里温度的分子束外延 (MnSb2Te4)x(Sb2Te3)1-x 拓扑材料的结构和磁学特性

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-12 DOI: 10.1063/5.0195940

Candice R. Forrester, Christophe Testelin, Kaushini Wickramasinghe, Ido Levy, Dominique Demaille, David Hrabovsky, Xiaxin Ding, Lia Krusin-Elbaum, Gustavo E. Lopez, Maria C. Tamargo

{"title":"Structural and magnetic properties of molecular beam epitaxy (MnSb2Te4)x(Sb2Te3)1−x topological materials with exceedingly high Curie temperature","authors":"Candice R. Forrester, Christophe Testelin, Kaushini Wickramasinghe, Ido Levy, Dominique Demaille, David Hrabovsky, Xiaxin Ding, Lia Krusin-Elbaum, Gustavo E. Lopez, Maria C. Tamargo","doi":"10.1063/5.0195940","DOIUrl":"https://doi.org/10.1063/5.0195940","url":null,"abstract":"Tuning the properties of magnetic topological materials is of interest to realize exotic physical phenomena, new quantum phases and quasiparticles, and topological spintronic devices. However, current topological materials exhibit Curie temperature (TC) values far below those needed for practical applications. In recent years, significant progress has been made to control and optimize TC, particularly through defect-engineering of these structures. Most recently, we reported TC values up to 80 K for (MnSb2Te4)x(Sb2Te3)1−x when 0.7 ≤ x ≤ 0.85 by controlling the composition x and the Mn content in these structures during molecular beam epitaxy growth. In this study, we show further enhancement of the TC, as high as 100 K, by maintaining high Mn content and reducing the growth rate from 0.9 nm/min to 0.5 nm/min. Derivative curves of the Hall resistance and the magnetization reveal the presence of two TC components contributing to the overall value and suggest TC1 and TC2 have distinct origins: excess Mn in MnSb2Te4 septuple layers (SLs) and high Mn content in Sb2−yMnyTe3 quintuple layer (QL) alloys, respectively. To elucidate the mechanisms promoting higher TC values in this system, we show evidence of enhanced structural disorder due to the excess Mn that occupies not only Sb sites but also Te sites, leading to the formation of a new crystal structure for these materials. Learning to control defects that enhance desired magnetic properties and understanding the mechanisms that promote high TC in magnetic topological materials such as (Mn1+ySb2−yTe4)x(Sb2−yMnyTe3)1−x is of great importance to achieve practical quantum devices.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"35 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141613066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Healing gradient degradation in Nb3Sn SRF cavities using a recoating method 使用重涂法修复 Nb3Sn SRF 型腔中的梯度退化

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-10 DOI: 10.1063/5.0218739

Eric Viklund, David N. Seidman, Sam Posen, Brad M. Tennis, Grigory Eremeev

引用次数: 0

Assignments of vibrational lines to OD-impurity complexes for adventitious impurities in β-Ga2O3 β-Ga2O3中偶发杂质的OD-杂质复合物振动线赋值

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-10 DOI: 10.1063/5.0219979

Andrew Venzie, Michael Stavola, W. Beall Fowler, Evan R. Glaser, Marko J. Tadjer, Jason I. Forbus, Mary Ellen Zvanut, Stephen J. Pearton

{"title":"Assignments of vibrational lines to OD-impurity complexes for adventitious impurities in β-Ga2O3","authors":"Andrew Venzie, Michael Stavola, W. Beall Fowler, Evan R. Glaser, Marko J. Tadjer, Jason I. Forbus, Mary Ellen Zvanut, Stephen J. Pearton","doi":"10.1063/5.0219979","DOIUrl":"https://doi.org/10.1063/5.0219979","url":null,"abstract":"Hydrogen in β-Ga2O3 passivates shallow impurities and deep-level defects and can have a strong effect on conductivity. More than a dozen O–D vibrational lines have been reported for β-Ga2O3 treated with the heavy isotope of hydrogen, deuterium. To explain the large number of O–D centers that have been observed, the involvement of additional nearby defects and impurities has been proposed. A few O–H centers have been associated with specific impurities that were introduced intentionally during crystal growth. However, definitive assignments of O–H and O–D vibrational lines associated with important adventitious impurities, such as Si and Fe, have been difficult. A set of well-characterized Si-doped β-Ga2O3 epitaxial layers with different layer thicknesses has been deuterated and investigated by vibrational spectroscopy to provide new evidence for the assignment of a line at 2577 cm−1 to an OD–Si complex. The vibrational properties of several of the reported OD-impurity complexes are consistent with the existence of a family of defects with a VGa1ic−D center at their core that is perturbed by a nearby impurity.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"26 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141588333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Photo-induced collective charge-density-wave dynamics in bulk 1T-VSe2 块体 1T-VSe2 中光诱导的集体电荷密度波动力学

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-10 DOI: 10.1063/5.0204205

P. Sutar, D. Grabnar, D. Vengust, D. Svetin, E. Goreshnik, D. Mihailovic, T. Mertelj

引用次数: 0

Application of triboelectric nanogenerator in self-powered motion detection devices: A review 三电纳米发电机在自供电运动检测设备中的应用：综述

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-03 DOI: 10.1063/5.0219633

Hongyuan Jiang, Xin Lv, Kai Wang

{"title":"Application of triboelectric nanogenerator in self-powered motion detection devices: A review","authors":"Hongyuan Jiang, Xin Lv, Kai Wang","doi":"10.1063/5.0219633","DOIUrl":"https://doi.org/10.1063/5.0219633","url":null,"abstract":"Among today’s bustling lifestyles, the demand for autonomous, durable, and low-maintenance healthcare systems has surged, surpassing that of earlier periods. Nanostructured and environmentally friendly materials employed in nanogenerator technology offer a novel avenue for biomedical applications by harnessing biomechanical energy. Triboelectric Nanogenerators (TENGs) have emerged as comprehensive solutions, furnishing self-sustaining, eco-conscious, and compact devices. Recognizing the immense potential of TENGs, this paper presents a comprehensive overview of its motion detection. Our analysis delves into the versatility of TENG-based motion detection systems, providing wearable, user-friendly solutions powered by human motion. Recent advancements in triboelectric devices are cataloged, elucidating their structural intricacies, capabilities, performance metrics, and future prospects. In addition, the article also outlines the applications of different TENGs in motion monitoring, including contact, non-contact, and single-electrode mode. The evolution of intelligent wearable technologies has extended our capacities in communication, healthcare, and various other domains beyond our biological limits. Apart from the Internet of Things, the concept of Internet of bodies or beings is poised for rapid advancement, promising further transformation of our lifestyles. Conclusively, we present insights into forthcoming opportunities and plausible strategies to address anticipated hurdles.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"48 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141549939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dimensionality-driven power-law gap in the bilayer TaTe2 grown by molecular-beam epitaxy 分子束外延生长的双层 TaTe2 中尺寸驱动的幂律间隙

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-02 DOI: 10.1063/5.0213957

Bruno Kenichi Saika, Satoshi Yoshida, Markel Pardo-Almanza, Natsuki Mitsuishi, Masato Sakano, Yuita Fujisawa, Yue Wang, Yoshihiro Iwasa, Hideki Matsuoka, Hidefumi Takahashi, Shintaro Ishiwata, Yoshinori Okada, Masaki Nakano, Kyoko Ishizaka

引用次数: 0

Transfer of hexagonal boron nitride quantum emitters onto arbitrary substrates with zero thermal budget 将六方氮化硼量子发射器转移到零热预算的任意基底上

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-02 DOI: 10.1063/5.0218367

Dante J. O’Hara, Hsun-Jen Chuang, Kathleen M. McCreary, Mehmet A. Noyan, Sung-Joon Lee, Enrique D. Cobas, Berend T. Jonker

{"title":"Transfer of hexagonal boron nitride quantum emitters onto arbitrary substrates with zero thermal budget","authors":"Dante J. O’Hara, Hsun-Jen Chuang, Kathleen M. McCreary, Mehmet A. Noyan, Sung-Joon Lee, Enrique D. Cobas, Berend T. Jonker","doi":"10.1063/5.0218367","DOIUrl":"https://doi.org/10.1063/5.0218367","url":null,"abstract":"The van der Waals material hexagonal boron nitride (hBN) has emerged as a promising candidate for hosting room temperature single-photon emitters (SPEs) for next-generation quantum technologies. However, the requirement of a high temperature anneal (850 °C or higher) to activate the SPEs in hBN makes it difficult to integrate into hybrid structures that cannot tolerate such temperatures, including all silicon-based circuits. In this work, we present a method to deterministically activate quantum emitters in multilayered hBN on a process substrate, followed by a zero thermal budget transfer to a target substrate. This technique does not lead to any degradation or loss of photon purity in the hBN emitters and provides a procedure for combining high-purity emitters with other exciting photonic, magnetic, or electrical properties to explore new physical phenomena. The ability to transfer hBN emitters onto arbitrary substrates creates new technological possibilities to incorporate these quantum photonic properties into photonic integrated circuits and plasmonic devices.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"1 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141532144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The origin of magnetic ordering and reduced mobility in KTaO3-based 2DEGs: Interfacial interdiffusion KTaO3 基二维电子元件中磁性有序性和迁移率降低的原因：界面相互扩散

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-01 DOI: 10.1063/5.0206068

Zixin Fan, Qiangtao Sui, Feng Ran, Haoming Ling, Dingyi Li, Zihao Wang, Pan Chen, Yan Liang, Jiandi Zhang

{"title":"The origin of magnetic ordering and reduced mobility in KTaO3-based 2DEGs: Interfacial interdiffusion","authors":"Zixin Fan, Qiangtao Sui, Feng Ran, Haoming Ling, Dingyi Li, Zihao Wang, Pan Chen, Yan Liang, Jiandi Zhang","doi":"10.1063/5.0206068","DOIUrl":"https://doi.org/10.1063/5.0206068","url":null,"abstract":"Recently, KTaO3 (KTO)-based 5d two-dimensional electron gases (2DEGs), characterized by robust spin–orbit coupling, have emerged as promising candidates for future spintronic devices. However, the carrier mobility of KTO-based 2DEGs is typically lower than that of SrTiO3-based 2DEGs, which limits their further development. It is imperative to explore the underlying causes of diminished carrier mobility and devise strategies to augment it. In addition, the genesis of magnetism within KTO-based 2DEGs remains ambiguous. In this study, the 2DEG within the amorphous-EuTiO3/KTO (a-ETO/KTO) heterostructure demonstrates a high electron mobility of 289.1 cm2 V−1 s−1, which exhibits a significant decrease as the film growth temperatures increase. This decrease can be primarily ascribed to electron scattering by impurities, which is induced by the amplified interfacial element interdiffusion at a higher film growth temperature. In addition, the magnetism of 2DEGs for samples grown at different temperatures shows an increasing trend with growth temperatures, which is predominantly derived from the interdiffusion of Eu atoms. This study provides an in-depth analysis of the origin of magnetic ordering and reduced mobility in KTO-based 2DEGs, which will promote the further development of 2DEGs for future applications in electronic devices.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"9 10 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141532145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A highly sensitive modified triple split ring metamaterial-based sensor for blood sample detection based on dielectric property alteration 基于介电特性改变的高灵敏度改良三分裂环超材料传感器，用于血液样本检测

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-01 DOI: 10.1063/5.0218374

Abdullah Al Mahfazur Rahman, Mohammad Tariqul Islam, Phumin Kirawanich, Badariah Bais, Haitham Alsaif, Abdulwadoud A. Maash, Ahasanul Hoque, Md. Moniruzzaman, Md. Shabiul Islam, Mohamed S. Soliman

{"title":"A highly sensitive modified triple split ring metamaterial-based sensor for blood sample detection based on dielectric property alteration","authors":"Abdullah Al Mahfazur Rahman, Mohammad Tariqul Islam, Phumin Kirawanich, Badariah Bais, Haitham Alsaif, Abdulwadoud A. Maash, Ahasanul Hoque, Md. Moniruzzaman, Md. Shabiul Islam, Mohamed S. Soliman","doi":"10.1063/5.0218374","DOIUrl":"https://doi.org/10.1063/5.0218374","url":null,"abstract":"This research paper demonstrates a metamaterial (MTM) based sensing technique to detect various blood samples by analyzing their dielectric properties. The performance of this MTM-based sensor is evaluated with the help of mimicked human blood samples that closely resemble the dielectric properties of actual human blood samples. Moreover, the ISM band frequency of 2.4 GHz is chosen as one of the reference resonance frequencies due to its various industrial and medical applications. The resonating patch is developed on the FR-4 substrate with a dimension of 10 × 20 mm2 that provides sharp reference resonances of 2.4 and 4.72 GHz for the spectra of the transmission coefficient with a good quality factor (Q-factor). The MTM sensor can detect the mimicked blood samples with a maximum frequency deviation of up to 650 MHz at 2.4 GHz and up to 850 MHz at 4.72 GHz, with maximum sensitivity of 0.917 and 0.707, respectively. The measured results using the prototype of the sensor support the simulation result with good agreement, indicating high sensing capability. Due to its high sensitivity, figure of merit (FoM), and frequency shifting with dielectric property changes in blood samples, the developed MTM-based sensor can be implemented effectively for quick sensing of infected blood samples and biomedical applications.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"321 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141509002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of ion irradiation on superconducting thin films 离子辐照对超导薄膜的影响

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-01 DOI: 10.1063/5.0202851

Katja Kohopää, Alberto Ronzani, Robab Najafi Jabdaraghi, Arijit Bera, Mário Ribeiro, Dibyendu Hazra, Jorden Senior, Mika Prunnila, Joonas Govenius, Janne S. Lehtinen, Antti Kemppinen

引用次数: 0