APL Materials最新文献_第6页

Flexible arch-shaped triboelectric sensor based on 3D printing for badminton movement monitoring and intelligent recognition of technical movements 基于 3D 打印技术的柔性拱形三电传感器，用于羽毛球运动监测和技术动作智能识别

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-23 DOI: 10.1063/5.0219223

Yun Yang, Lei Jia, Ziheng Wang, Jie Suo, Xiaorui Yang, Shuping Xue, Yingying Zhang, Hui Li, Tingting Cai

{"title":"Flexible arch-shaped triboelectric sensor based on 3D printing for badminton movement monitoring and intelligent recognition of technical movements","authors":"Yun Yang, Lei Jia, Ziheng Wang, Jie Suo, Xiaorui Yang, Shuping Xue, Yingying Zhang, Hui Li, Tingting Cai","doi":"10.1063/5.0219223","DOIUrl":"https://doi.org/10.1063/5.0219223","url":null,"abstract":"Efficient monitoring and recognition of movement are crucial in enhancing athletic performance. Traditional methods have limitations in terms of high site requirements and power consumption, making them unsuitable for long-term tracking and monitoring. A potential solution to low-power monitoring of body area networks is triboelectric sensors. However, the current analysis method for badminton triboelectric sensing data is relatively simple, while flexible, triboelectric sensors based on 3D printing face issues such as discomfort when joints are bent or twisted in a large range. In light of this, a flexible arch-shaped triboelectric sensor based on 3D printing (FA-Sensor) is proposed. By combining neural network algorithms with the signal acquisition module and the master computer, an intelligent multi-sensor node system for badminton monitoring is established. The FA-Sensor exhibits high sensitivity to bending and twisting motions due to its elastic TPE shell and arched shape design. It minimizes interference with human motion during bending (10°–150°) or twisting (20°–100°) over a wide range. The peak output voltage of the FA-Sensor demonstrates a clear functional relationship with the bending angle, exhibiting piecewise sensitivities of 7.98 and 29.28 mV/°, respectively. For seven different parts of the human body, it can be quickly customized to different sizes, with stable and repeatable response outputs. In application, the badminton sports monitoring system enables real-time feedback and recognition of four typical technical movements, achieving a recognition accuracy rate of 97.2%. The system enables athletes to analyze and enhance badminton technology while also exhibiting promising potential for application in other intelligent sports domains.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"24 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141770260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-quality Ge1−xSnx (x = 0–0.11) realized by UHV-CVD using Ge2H6 and SnCl4: Materials growth, structural/optical properties, and prototype IR photodetectors 利用 Ge2H6 和 SnCl4，通过超高真空-化学气相沉积实现高质量 Ge1-xSnx（x = 0-0.11）：材料生长、结构/光学特性和红外光探测器原型

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-23 DOI: 10.1063/5.0213230

Changjiang Xie, Yue Li, Zhengjie Wu, Songsong Wu, Yixin Wang, Guangyang Lin, Cheng Li, Hui Cong, Chi Xu, Chunlai Xue

{"title":"High-quality Ge1−xSnx (x = 0–0.11) realized by UHV-CVD using Ge2H6 and SnCl4: Materials growth, structural/optical properties, and prototype IR photodetectors","authors":"Changjiang Xie, Yue Li, Zhengjie Wu, Songsong Wu, Yixin Wang, Guangyang Lin, Cheng Li, Hui Cong, Chi Xu, Chunlai Xue","doi":"10.1063/5.0213230","DOIUrl":"https://doi.org/10.1063/5.0213230","url":null,"abstract":"GeSn materials with Sn contents ranging between 0% and 11% have been successfully grown by using Ge2H6 and SnCl4 in a hot-wall UHV-CVD system at low reaction pressures of 0.2–0.4 Torr. Both fully strained and partially relaxed materials have been produced. It was found that the materials were of high crystallinity as evidenced by few threading dislocations from cross-sectional TEM. Photoluminescence studies have shown that the PL spectra shift to longer wavelengths, and the PL intensity increases exponentially as the Sn contents increase. The photoemission cutoff for a 9.5% Sn sample is beyond 2600 nm, and low temperature PL measurements have confirmed that this sample is already in the direct gap material regime. Prototype photoconductor devices were fabricated with a partially strained 5% Sn sample, showing much smaller dark currents and similar spectral coverage as compared to a fully strained 7.8% Sn device reported in the literature. The reported technical route has provided a new path toward high quality, low cost GeSn epitaxy, and will contribute to the development of group IV optoelectronics.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"25 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141784985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Patterning luminescent and stable perovskite-acrylic polymer composites via a convenient strategy 通过便捷的策略制备发光且稳定的过氧化物-丙烯酸聚合物复合材料

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-19 DOI: 10.1063/5.0223656

Jinxin Guo, Jing Wang, Shuang Chen, Peige Tong, Yifei Liu, Yiwei Zhang, Xinping Zhang

{"title":"Patterning luminescent and stable perovskite-acrylic polymer composites via a convenient strategy","authors":"Jinxin Guo, Jing Wang, Shuang Chen, Peige Tong, Yifei Liu, Yiwei Zhang, Xinping Zhang","doi":"10.1063/5.0223656","DOIUrl":"https://doi.org/10.1063/5.0223656","url":null,"abstract":"Perovskite semiconductors have achieved great success during the last decades in the application of solar cells, light-emitting diodes, and photodiodes. Developing strategies to pattern perovskites with high-resolution is crucial to broaden the application scenarios of perovskite displays and on-chip lighting. However, the widely used lithography procedure has the problem of high-cost and complexity. In this study, we demonstrate a method to pattern a luminescent perovskite-acrylic polymer composite that is prepared by direct injection at room temperature. This strategy uses standard photoresists and UV lithography at room temperature, and then the pattern in the photoresists can be easily transferred to the perovskite-acrylic polymer composite. Finally, we can obtain high-quality micron-scale features. Furthermore, we demonstrate the universality of this strategy by adapting perovskite with different color emissions into the composite and patterning it using the same procedure. Another advantage of this patternable perovskite-acrylic polymer composite is its superb water-repellent properties, which are believed to be of great potential in underwater applications.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"9 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141739983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing supercapacitor energy density by TiN–ZnS composites unveiled as a promising electrode 通过 TiN-ZnS 复合材料提高超级电容器的能量密度，揭示其作为电极的前景

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-19 DOI: 10.1063/5.0221353

Muhammad Arif, Junaid Riaz, Amina Bibi, Hongran Yang, Ting Zhu

引用次数: 0

Harnessing nonlocal effects for wave localization and multi-frequency rainbow trapping in periodic structures 利用非局部效应实现周期性结构中的波定位和多频彩虹捕获

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-18 DOI: 10.1063/5.0201585

Jiao Wang, Nan Gao, Weiqiu Chen

引用次数: 0

Air vehicle humidity sensor based on PVA film humidity sensing principle 基于 PVA 薄膜湿度传感原理的空气车辆湿度传感器

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-18 DOI: 10.1063/5.0213766

Bo Wang, Bei Han, Ke Wang, Shengli Cao

{"title":"Air vehicle humidity sensor based on PVA film humidity sensing principle","authors":"Bo Wang, Bei Han, Ke Wang, Shengli Cao","doi":"10.1063/5.0213766","DOIUrl":"https://doi.org/10.1063/5.0213766","url":null,"abstract":"In order to ensure the flight safety of an aircraft and reduce the loss of humidity to the precision instruments and equipment in the aircraft, this study designs a small-size resonator antenna shape based on Radio Frequency Identification (RFID) technology and sensor principles. The resonator antenna makes use of the characteristics of the square ring and bent resonator and, at the same time, adopts the polyvinyl alcohol film with strong hygroscopic performance as the moisture-sensitive material. The equivalent resonant circuit of the sensor is constructed, and the parameters are optimized according to the principle of “coarse tuning of inductance parameters and fine tuning of capacitance parameters” to determine the optimal size. The relationship between the resonance frequency and the resonance response of humidity was investigated by the optimized model of the RFID resonator and polyvinyl alcohol (PVA). The simulation results show that as the relative humidity increases from 29.1 %RH to 90.9 %RH, the dielectric constant of the PVA film increases from 5.3 to 22 and the resonance frequency of the resonator decreases significantly from 4.74 to 4.12 GHz, with a total offset of 620 MHz, and the sensitivity is as high as 10.03 MHz/%RH. The results show that the designed sensor has a high sensitivity to humidity changes and a wide humidity detection range, providing an advanced solution for the detection and control of humidity inside aircraft.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"23 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141739731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication of pristine 2D heterostructures for scanning probe microscopy 制造用于扫描探针显微镜的原始二维异质结构

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-17 DOI: 10.1063/5.0213542

James McKenzie, Nileema Sharma, Xiaolong Liu

{"title":"Fabrication of pristine 2D heterostructures for scanning probe microscopy","authors":"James McKenzie, Nileema Sharma, Xiaolong Liu","doi":"10.1063/5.0213542","DOIUrl":"https://doi.org/10.1063/5.0213542","url":null,"abstract":"Material-by-design has been a long-standing aspiration that has recently become a reality. Such designer materials have been repeatedly demonstrated using the top-down approach of mechanical exfoliation and stacking, leading to a variety of artificial 2D heterostructures with new properties that are otherwise unattainable. Consequently, tremendous research frontiers in physics, chemistry, engineering, and life science have been created. While thousands of layered crystals exist in nature, only a few dozen of them with manageable chemical-stability have been made into heterostructures using this method. Moreover, experimental investigations of materials that have received limited exploration in the 2D realm, such as cuprates, halides, and perovskites, along with their heterostructures, have been fundamentally hindered by their rapid chemical degradation. Another critical challenge imposed by exfoliating and stacking 2D layers in ambient environment is the absorption of itinerant gas molecules that further contaminate sensitive 2D interfaces in the heterostructures. Such contamination and compromised material properties significantly hinder surface-sensitive local probes—scanning probe microscopy (SPM)—that often require nanometer to atomic scale surface cleanliness. In this article, we aim to provide a technical review of recent development toward 2D materials and heterostructure fabrication in more controlled environments that are suitable for SPM characterizations. These include the development of more efficient mechanical exfoliation and dry-transfer techniques, as well as the incorporation of 2D material exfoliation and transfer in inert gas, low vacuum, and, eventually, ultra-high vacuum environments. Finally, we provide an outlook on the remaining challenges and opportunities in ultra-clean 2D material fabrication techniques.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"61 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141739799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electric field enhancement of the superconducting spin-valve effect via strain-transfer across a ferromagnetic/ferroelectric interface 通过铁磁/铁电界面上的应变传递实现超导自旋阀效应的电场增强

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-17 DOI: 10.1063/5.0211769

Tomohiro Kikuta, Sachio Komori, Keiichiro Imura, Tomoyasu Taniyama

{"title":"Electric field enhancement of the superconducting spin-valve effect via strain-transfer across a ferromagnetic/ferroelectric interface","authors":"Tomohiro Kikuta, Sachio Komori, Keiichiro Imura, Tomoyasu Taniyama","doi":"10.1063/5.0211769","DOIUrl":"https://doi.org/10.1063/5.0211769","url":null,"abstract":"In a ferromagnet/superconductor/ferromagnet (F/S/F) superconducting spin-valve (SSV), a change in the magnetization alignment of the two F layers modulates the critical temperature (Tc) of the S layer. The Tc-switching effect (the SSV effect) is based on the interplay between superconductivity and magnetism. The fast and large resistive switching associated with Tc-switching is suitable for nonvolatile cryogenic memory applications. However, the external magnetic field-based operation of SSVs is hindering their miniaturization, and therefore, electric field control of the SSV effect is desired. Here, we report epitaxial growth of a La0.67Ca0.33MnO3/YBa2Cu3O7/La0.67Ca0.33MnO3 SSV on a piezo-electric [Pb(Mg0.33Nb0.67)O3]0.7-[PbTiO3]0.3 (001) substrate and demonstrate electric field control of the SSV effect. Electric field-induced strain-transfer from the piezo-electric substrate increases the magnetization and Tc of the SSV and leads to an enhancement of the magnitude of Tc-switching. The results are promising for the development of magnetic-field-free superconducting spintronic devices, in which the S/F interaction is not only sensitive to the magnetization alignment but also to an applied electric field.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"40 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141739732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical contrast analysis of α-RuCl3 nanoflakes on oxidized silicon wafers 氧化硅晶片上的α-RuCl3 纳米片的光学对比分析

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-17 DOI: 10.1063/5.0212132

Tatyana V. Ivanova, Daniel Andres-Penares, Yiping Wang, Jiaqiang Yan, Daniel Forbes, Servet Ozdemir, Kenneth S. Burch, Brian D. Gerardot, Mauro Brotons-Gisbert

{"title":"Optical contrast analysis of α-RuCl3 nanoflakes on oxidized silicon wafers","authors":"Tatyana V. Ivanova, Daniel Andres-Penares, Yiping Wang, Jiaqiang Yan, Daniel Forbes, Servet Ozdemir, Kenneth S. Burch, Brian D. Gerardot, Mauro Brotons-Gisbert","doi":"10.1063/5.0212132","DOIUrl":"https://doi.org/10.1063/5.0212132","url":null,"abstract":"α-RuCl3, a narrow-band Mott insulator with a large work function, offers intriguing potential as a quantum material or as a charge acceptor for electrical contacts in van der Waals devices. In this work, we perform a systematic study of the optical reflection contrast of α-RuCl3 nanoflakes on oxidized silicon wafers and estimate the accuracy of this imaging technique to assess the crystal thickness. Via spectroscopic micro-ellipsometry measurements, we characterize the wavelength-dependent complex refractive index of α-RuCl3 nanoflakes of varying thickness in the visible and near-infrared. Building on these results, we simulate the optical contrast of α-RuCl3 nanoflakes with thicknesses below 100 nm on SiO2/Si substrates under different illumination conditions. We compare the simulated optical contrast with experimental values extracted from optical microscopy images and obtain good agreement. Finally, we show that optical contrast imaging allows us to retrieve the thickness of the RuCl3 nanoflakes exfoliated on an oxidized silicon substrate with a mean deviation of −0.2 nm for thicknesses below 100 nm with a standard deviation of only 1 nm. Our results demonstrate that optical contrast can be used as a non-invasive, fast, and reliable technique to estimate the α-RuCl3 thickness.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"82 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141739795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic and magneto-transport properties of non-collinear antiferromagnetic Mn3Ge epitaxial films 非共轭反铁磁性 Mn3Ge 外延薄膜的磁性和磁传输特性

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-07-12 DOI: 10.1063/5.0217710

Yutaro Takeuchi, Hossein Sepehri-Amin, Satoshi Sugimoto, Takanobu Hiroto, Shinya Kasai

引用次数: 0