APL Materials最新文献_第6页

Role of the coupling of the electronic transitions on the order of the metal-to-insulator phase transition in nickelates 电子转变耦合对镍酸盐中金属-绝缘体相变顺序的影响

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-08-19 DOI: 10.1063/5.0221334

Lucia Varbaro, Lukas Korosec, Chih-Ying Hsu, Duncan T. L. Alexander, Nicolas Jaouen, Jean-Marc Triscone

引用次数: 0

Surface reconstructions and electronic structure of metallic delafossite thin films 金属 delafossite 薄膜的表面重构和电子结构

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-08-15 DOI: 10.1063/5.0217540

Qi Song, Zhiren He, Brendan D. Faeth, Christopher T. Parzyck, Anna Scheid, Chad J. Mowers, Yufan Feng, Qing Xu, Sonia Hasko, Jisung Park, Matthew R. Barone, Y. Eren Suyolcu, Peter A. van Aken, Betül Pamuk, Craig J. Fennie, Phil D. C. King, Kyle M. Shen, Darrell G. Schlom

{"title":"Surface reconstructions and electronic structure of metallic delafossite thin films","authors":"Qi Song, Zhiren He, Brendan D. Faeth, Christopher T. Parzyck, Anna Scheid, Chad J. Mowers, Yufan Feng, Qing Xu, Sonia Hasko, Jisung Park, Matthew R. Barone, Y. Eren Suyolcu, Peter A. van Aken, Betül Pamuk, Craig J. Fennie, Phil D. C. King, Kyle M. Shen, Darrell G. Schlom","doi":"10.1063/5.0217540","DOIUrl":"https://doi.org/10.1063/5.0217540","url":null,"abstract":"The growing interest in the growth and study of thin films of low-dimensional metallic delafossites, with the general formula ABO2, is driven by their potential to exhibit electronic and magnetic characteristics that are not accessible in bulk systems. The layered structure of these compounds introduces unique surface states as well as electronic and structural reconstructions, making the investigation of their surface behavior pivotal to understanding their intrinsic electronic structure. In this work, we study the surface phenomena of epitaxially grown PtCoO2, PdCoO2, and PdCrO2 films, utilizing a combination of molecular-beam epitaxy and angle-resolved photoemission spectroscopy. Through precise control of surface termination and treatment, we discover a pronounced 3×3 surface reconstruction in PtCoO2 films and PdCoO2 films, alongside a 2 × 2 surface reconstruction observed in PdCrO2 films. These reconstructions have not been reported in prior studies of delafossites. Furthermore, our computational investigations demonstrate the BO2 surface’s relative stability compared to the A-terminated surface and the significant reduction in surface energy facilitated by the reconstruction of the A-terminated surface. These experimental and theoretical insights illuminate the complex surface dynamics in metallic delafossites, paving the way for future explorations of their distinctive properties in low-dimensional studies.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"45 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Interpretable machine learning for materials discovery: Predicting CO2 adsorption properties of metal–organic frameworks 用于材料发现的可解释机器学习：预测金属有机框架的二氧化碳吸附特性

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-08-15 DOI: 10.1063/5.0222154

Yukun Teng, Guangcun Shan

{"title":"Interpretable machine learning for materials discovery: Predicting CO2 adsorption properties of metal–organic frameworks","authors":"Yukun Teng, Guangcun Shan","doi":"10.1063/5.0222154","DOIUrl":"https://doi.org/10.1063/5.0222154","url":null,"abstract":"Metal–organic frameworks (MOFs), as novel porous crystalline materials with high porosity and a large specific surface area, have been increasingly utilized for CO2 adsorption. Machine learning (ML) combined with molecular simulations is used to identify MOFs with high CO2 adsorption capacity from millions of MOF structures. In this study, 23 structural and molecular features and 765 calculated features were proposed for the ML model and trained on a hypothetical MOF dataset for CO2 adsorption at different pressures. The calculated features improved the prediction accuracy of the ML model by 15%–20% and revealed its interpretability, consistent with the analysis of the interaction potential. Subsequently, the importance of the relevant features was ranked at different pressures. Regardless of the pressure, the molecular structure and pore size were the most critical factors. van der Waals force-related descriptors gained more competitive advantages at low pressures, whereas electrical-field-related descriptors gradually dominated at high pressures. Overall, this study provides a novel perspective to guide the initial high-throughput screening of MOFs as high-performance CO2 adsorption materials.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"30 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Room temperature chiral magnetoresistance in a chiral-perovskite-based perpendicular spin valve 基于手性透闪石的垂直自旋阀中的室温手性磁阻

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-08-15 DOI: 10.1063/5.0221834

Min-Gu Kang, In-Kook Hwang, Hee-Chang Kyung, Jaimin Kang, Donghyeon Han, Soogil Lee, Junyoung Kwon, Kyung-Jin Lee, Jihyeon Yeom, Byong-Guk Park

{"title":"Room temperature chiral magnetoresistance in a chiral-perovskite-based perpendicular spin valve","authors":"Min-Gu Kang, In-Kook Hwang, Hee-Chang Kyung, Jaimin Kang, Donghyeon Han, Soogil Lee, Junyoung Kwon, Kyung-Jin Lee, Jihyeon Yeom, Byong-Guk Park","doi":"10.1063/5.0221834","DOIUrl":"https://doi.org/10.1063/5.0221834","url":null,"abstract":"Chirality-induced spin selectivity (CISS) allows for the generation of spin currents without the need for ferromagnets or external magnetic fields, enabling innovative spintronic device designs. One example is a chiral spin valve composed of ferromagnetic and chiral materials, in which the resistance depends on both the magnetization direction of the ferromagnet and the chirality of the chiral material. So far, chiral spin valves have predominately employed chiral organic molecules, which have limited device applications. Chiral perovskites, which combine the properties of inorganic perovskites with chiral organic molecules, provide an excellent platform for exploring CISS-based devices. However, previous chiral perovskite-based spin valves exhibited magnetoresistance (MR) only at low temperatures. Here, we report room temperature MR in a chiral spin valve consisting of chiral perovskites/AlOx/perpendicular ferromagnet structures. It is observed that the chiral MR increases with rising temperature, suggesting the crucial role of phonon-induced enhancement of spin–orbit coupling in CISS in our device. Furthermore, we enhanced the chiral MR by introducing chiral molecules with amplified chirality. This highlights the potential of chirality engineering to improve CISS and the associated chiral MR, thereby opening possibilities for chiral spin valves tailored for cutting-edge spintronic applications.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"62 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142225268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Elastocaloric effect and cooling performance of NiTi sheets in a continuous rotating bending elastocaloric cooler 连续旋转弯曲弹性冷却器中镍钛板的弹性热效应和冷却性能

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-08-15 DOI: 10.1063/5.0217563

Siyuan Cheng, Wanju Sun, Xueshi Li, Jiongjiong Zhang

{"title":"Elastocaloric effect and cooling performance of NiTi sheets in a continuous rotating bending elastocaloric cooler","authors":"Siyuan Cheng, Wanju Sun, Xueshi Li, Jiongjiong Zhang","doi":"10.1063/5.0217563","DOIUrl":"https://doi.org/10.1063/5.0217563","url":null,"abstract":"Elastocaloric cooling technology has the prospect of becoming a commercialized green alternative to current vapor-compression technology, and the systematic characterization of the elastocaloric effect and microstructure has become increasingly significant for the optimization of elastocaloric coolers and heat pumps. In this work, a comprehensive elastocaloric effect characterization for a dog-bone shaped NiTi sheet with a thickness of 0.5 mm was performed for the application in a compact continuous rotating bending elastocaloric cooler. The elastocaloric effect was found to be nearly identical under Brayton-like and sinusoidal force-controlled cyclic tensile loadings. The maximum adiabatic temperature change values of 31 and 23 K were recorded in Brayton-like cyclic loadings under maximum applied stress of 600 and 400 MPa, respectively, with an applied strain rate of 0.1 s−1. During fatigue tests, large applied stress (&gt;600 MPa) and high applied strain rates (&gt;0.1 s−1) tended to result in premature failure of the NiTi sheet samples. In the continuous rotating bending elastocaloric cooler, the sheets generated a temperature span of 6 K between the copper heat sink and heat source. The results of this work provide a set of thermophysical property data for the elastocaloric solid refrigerant and insights for the optimization of structural and operational parameters in elastocaloric coolers and heat pumps.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"77 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Advances in InGaN-based RGB micro-light-emitting diodes for AR applications: Status and perspective 用于 AR 应用的基于 InGaN 的 RGB 微型发光二极管的进展：现状与展望

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-08-14 DOI: 10.1063/5.0222618

Panpan Li, Jacob Ewing, Matthew S. Wong, Yifan Yao, Hongjian Li, Srinivas Gandrothula, Jordan M. Smith, Mike Iza, Shuji Nakamura, Steven P. DenBaars

引用次数: 0

Enhanced electrical performance in graphene field-effect transistors through post-annealing of high-k HfLaO gate dielectrics 通过对高 K HfLaO 栅极电介质进行后退火处理提高石墨烯场效应晶体管的电气性能

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-08-14 DOI: 10.1063/5.0207559

Chunlin Liu, Xuesong Li, Ling-Xuan Qian, Jing Tian, Xiping Zhang

{"title":"Enhanced electrical performance in graphene field-effect transistors through post-annealing of high-k HfLaO gate dielectrics","authors":"Chunlin Liu, Xuesong Li, Ling-Xuan Qian, Jing Tian, Xiping Zhang","doi":"10.1063/5.0207559","DOIUrl":"https://doi.org/10.1063/5.0207559","url":null,"abstract":"High-k gate dielectrics have attracted a great deal of attention in the investigation of transistors due to their unique properties such as superior gate controllability. However, their integration into graphene field-effect transistors (GFETs) remains problematic and the physical mechanisms governing the performance of these devices are still not fully understood. In this study, the effects of post-annealing on GFETs utilizing the high-k HfLaO ternary oxide as the gate dielectric were comprehensively investigated. The HfLaO film was deposited on top of graphene by magnetron sputtering, and the device performance with various post-annealing temperatures was conducted. It was found that post-annealing temperature can effectively increase the dielectric constant through balancing the oxygen-vacancy defects and moisture absorption. Both the surface morphology of HfLaO and performance of GFETs were investigated, and the fabricated GFETs exhibit notable electrical performance enhancements. Specifically, GFETs with a 200 °C post-annealed HfLaO gate dielectric demonstrate the optimal device performance, featuring a minimal Dirac point voltage (VDirac) of 1.1 V and a minimal hysteresis (ΔVDirac) of 0.5 V. The extracted hole and electron mobilities are 4012 and 1366 cm2/V · s, respectively, nearly one order of magnitude higher than that of GFETs with as-deposited HfLaO. This work outperforms other existing GFETs utilizing high-k gate dielectric and chemical vapor deposition grown graphene in terms of both carrier mobility and on–off ratio. It is also noted that the excessive post-annealing temperature can negatively impact the GFET performance through introducing oxygen vacancies, increasing the surface roughness, lowering the breakdown voltage, and inducing recrystallization.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"171 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Polymer assisted deposition of YIG thin films with thickness control for spintronics applications 聚合物辅助沉积用于自旋电子学应用的具有厚度控制功能的 YIG 薄膜

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-08-14 DOI: 10.1063/5.0223260

Rubén Corcuera, Pilar Jiménez-Cavero, Rafael Pérez del Real, Francisco Rivadulla, Rafael Ramos, José Ignacio Morales-Aragonés, Soraya Sangiao, César Magén, Luis Morellón, Irene Lucas

{"title":"Polymer assisted deposition of YIG thin films with thickness control for spintronics applications","authors":"Rubén Corcuera, Pilar Jiménez-Cavero, Rafael Pérez del Real, Francisco Rivadulla, Rafael Ramos, José Ignacio Morales-Aragonés, Soraya Sangiao, César Magén, Luis Morellón, Irene Lucas","doi":"10.1063/5.0223260","DOIUrl":"https://doi.org/10.1063/5.0223260","url":null,"abstract":"The use of magnetic garnets in new technologies such as spintronic devices requires fine-structured thin films. Classical fabrication techniques for these materials, typically physical vapor deposition methods, lead to excellent magnetic behavior. However, availability and scalability for potential applications are well restricted. In this study, we propose an innovative approach to fabricating Yttrium Iron Garnet thin films with precise thickness control achieved through iterative layer deposition via a chemical synthesis route. Remarkably, the iterative deposition process results in films exhibiting exceptional crystallinity. Magnetic characterization provides saturation magnetization and coercivity values on par with those reported in literature, summed to narrow ferromagnetic resonance lines. Therefore, in this work we demonstrate the viability of polymer assisted deposition as a promising alternative thinking about scalability to conventional deposition techniques for this material. Notably, our findings reveal energy conversion efficiencies comparable to those achieved with materials synthesized via physical vapor deposition methods.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"210 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal contribution to current-driven antiferromagnetic-order switching 热对电流驱动反铁磁阶切换的贡献

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-08-14 DOI: 10.1063/5.0219729

Myoung-Woo Yoo, Virginia O. Lorenz, Axel Hoffmann, David G. Cahill

{"title":"Thermal contribution to current-driven antiferromagnetic-order switching","authors":"Myoung-Woo Yoo, Virginia O. Lorenz, Axel Hoffmann, David G. Cahill","doi":"10.1063/5.0219729","DOIUrl":"https://doi.org/10.1063/5.0219729","url":null,"abstract":"In information technology devices, current-driven state switching is crucial in various disciplines including spintronics, where the contribution of heating to the switching mechanism plays an inevitable role. Recently, current-driven antiferromagnetic order switching has attracted considerable attention due to its implications for next-generation spintronic devices. Although the switching mechanisms can be explained by spin dynamics induced by spin torques, some reports have claimed that demagnetization above the Néel temperature due to Joule heating is critical for switching. Here, we present a systematic method and an analytical model to quantify the thermal contribution due to Joule heating in micro-electronic devices, focusing on current-driven octupole switching in the non-collinear antiferromagnet, Mn3Sn. The results consistently show that the critical temperature for switching remains relatively constant above the Néel temperature, while the threshold current density depends on the choice of substrate and the base temperature. In addition, we provide an analytical model to calculate the Joule-heating temperature, which quantitatively explains our experimental results. From numerical calculations, we illustrate the reconfiguration of magnetic order during cooling from a demagnetized state of polycrystalline Mn3Sn. This work provides not only deeper insights into magnetization switching in antiferromagnets, but also a general guideline for evaluating the Joule-heating temperature excursions in micro-electronic devices.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"97 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal conductivity of double polymorph Ga2O3 structures 双多晶体 Ga2O3 结构的导热性

IF 6.1 2区材料科学

APL Materials Pub Date : 2024-08-14 DOI: 10.1063/5.0213985

Azat Abdullaev, Kairolla Sekerbayev, Alexander Azarov, Vishnukanthan Venkatachalapathy, Vinay S. Chauhan, Zhandos Utegulov, Andrej Kuznetsov

{"title":"Thermal conductivity of double polymorph Ga2O3 structures","authors":"Azat Abdullaev, Kairolla Sekerbayev, Alexander Azarov, Vishnukanthan Venkatachalapathy, Vinay S. Chauhan, Zhandos Utegulov, Andrej Kuznetsov","doi":"10.1063/5.0213985","DOIUrl":"https://doi.org/10.1063/5.0213985","url":null,"abstract":"Recently discovered double gamma/beta (γ/β) polymorph Ga2O3 structures constitute a class of novel materials providing an option to modulate functional properties across interfaces without changing the chemical compositions of materials, in contrast to that in conventional heterostructures. In this work, for the first time, we investigate thermal transport in such homo-interface structures as an example of their physical properties. In particular, the cross-plane thermal conductivity (k) was measured by femtosecond laser-based time-domain thermoreflectance with MHz modulation rates, effectively obtaining depth profiles of the thermal conductivity across the γ-/β-Ga2O3 structures. In this way, the thermal conductivity of γ-Ga2O3 ranging from 1.84 to 2.11 W m−1 K−1 was found to be independent of the initial β-substrates orientations, in accordance with the cubic spinel structure of the γ-phase and consistently with the molecular dynamics simulation data. In turn, the thermal conductivity of monoclinic β-Ga2O3 showed a distinct anisotropy, with values ranging from 10 W m−1 K−1 for [−201] to 20 Wm−1 K−1 for [010] orientations. Thus, for double γ-/β-Ga2O3 polymorph structures formed on [010] β-substrates, there is an order of magnitude difference in thermal conductivity across the γ/β interface, which can potentially be exploited in thermal energy conversion applications.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"17 1","pages":""},"PeriodicalIF":6.1,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142197830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0