Analog Integrated Circuits and Signal Processing最新文献

{"title":"Metamaterial absorber-based rectifier circuit for efficient RF energy harvesting at 2.4 ghz for IoT applications","authors":"Ayşe Incesu Dokumaci,&nbsp;Fatih Özkan Alkurt,&nbsp;Lulu Wang,&nbsp;Muharrem Karaaslan","doi":"10.1007/s10470-025-02412-1","DOIUrl":"10.1007/s10470-025-02412-1","url":null,"abstract":"<div><p>The radio frequency (RF) energy harvesting system collects electromagnetic energy that is freely propagating in the environment to charge low-power devices. In this study, we propose a novel voltage rectifier circuit based on a metamaterial absorber. Radio frequency energy in the 2.4 GHz ISM band is harvested from the environment by a metamaterial absorber and converted into direct current (DC) energy in a rectifier circuit. First, a high-efficiency metamaterial absorber of size 34 mm x 34 mm x 1.6 mm is designed on an FR4 substrate, followed by the design of a voltage rectifier circuit. The metamaterial absorber operates in the 2.4 GHz ISM band and is designed using a Finite Integration Technique (FIT) based simulation program that provides parametric and genetic algorithm tools. The design achieves a Reflection Coefficient <span>(:left({text{S}}_{11}right))</span> of -26 dB and an absorption value of 99% at a working frequency of 2.4 GHz, independent of polarization direction. The voltage rectifier circuit is designed using Advanced Design System (ADS) software, and it achieves an efficiency of 73% for 5 dBm input power at 2.4 GHz. The designed metamaterial absorber structure and rectification circuit have been fabricated in the laboratory, and the simulation and fabrication results are consistent. The energy harvesting system presented in this study can generate electrical energy to power low-power Internet of Things (IoT) devices at a voltage of 1.9 V DC.</p></div>","PeriodicalId":7827,"journal":{"name":"Analog Integrated Circuits and Signal Processing","volume":"124 1","pages":""},"PeriodicalIF":1.2,"publicationDate":"2025-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143908755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A review of optical beam steering technologies in LiDAR photonic chips","authors":"S. Kavitha,&nbsp;M. Baskaran","doi":"10.1007/s10470-025-02404-1","DOIUrl":"10.1007/s10470-025-02404-1","url":null,"abstract":"<div><p>The capabilities of LiDAR (Light Detection and Ranging) systems have been revolutionized by the development of a revolutionary photonic device that can precisely guide optical beams. Beam steering in traditional LiDAR systems frequently depends on mechanical parts, which can reduce reliability, speed, and accuracy. With the solid-state solution provided by this innovative chip-based method, scanning rates can be accelerated, resolution can be increased, and durability can be enhanced. The device can dynamically adjust the direction of the laser beam without shifting any physical components by utilizing the concepts of optical phased arrays. This innovative technology could improve applications in a number of industries, such as robots, environmental monitoring, and rider less cars. The chip opens the door for more sophisticated and adaptable LiDAR solutions because of its small size and low power consumption, which make it perfect for integration into a variety of devices.</p></div>","PeriodicalId":7827,"journal":{"name":"Analog Integrated Circuits and Signal Processing","volume":"124 1","pages":""},"PeriodicalIF":1.2,"publicationDate":"2025-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143908758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"New FTFNTA-based tunable charge-controlled memristance simulator and its mutation to floating flux-controlled memristor emulator","authors":"Nagendra Kumar Vishwakarma,&nbsp;Bal Chand Nagar","doi":"10.1007/s10470-025-02402-3","DOIUrl":"10.1007/s10470-025-02402-3","url":null,"abstract":"<div><p>This paper presents a novel charge-controlled memristance simulator utilizing an analog building block known as the Four Terminal Floating Nullor Transconductance Amplifier (FTFNTA) along with three grounded passive elements. The reported emulation configuration distinguishes itself from many existing memristor emulators by eliminating the necessity for voltage multiplication without compromising operating ranges. Instead, it utilizes the transconductance amplifier stage of the FTFNTA to achieve the multiplication function. The working of the discussed emulation configuration has been confirmed by performing simulations conducted using PSPICE employing the commercial off-the-shelf (COTS) available ICs utilized in constructing the FTFNTA. The current–voltage characteristics demonstrate that the hardware realization of the proposed circuit perfectly realizes the memristor function in both incremental/decremental configurations. The results also suggest that by modifying the parameters’ values the frequency range can be extended up to 12 MHz. Furthermore, the efficacy of the reported charge-controlled memristance simulator has been tested in a mutator circuit to realize a floating flux-controlled memristor. The results are in confirmation with the flux-controlled memristor’s element characteristics.</p></div>","PeriodicalId":7827,"journal":{"name":"Analog Integrated Circuits and Signal Processing","volume":"124 1","pages":""},"PeriodicalIF":1.2,"publicationDate":"2025-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143908788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A new nano-scale authentication architecture for improving the security of human-computer interaction systems based on quantum computing","authors":"Seyed-Sajad Ahmadpour,&nbsp;Muhammad Zohaib,&nbsp;Nima Jafari Navimipour,&nbsp;Neeraj Kumar Misra,&nbsp;Hadi Rasmi,&nbsp;Huseyn Salahov,&nbsp;Danial Bakhshayeshi Avval,&nbsp;Ahmad Habibizad Navin,&nbsp;Mehdi Hosseinzadeh","doi":"10.1007/s10470-025-02390-4","DOIUrl":"10.1007/s10470-025-02390-4","url":null,"abstract":"<div><p>Human-Computer Interaction (HCI) is an interdisciplinary area of study focusing on the interaction of users and computers by scheming interactive computer interfaces. In addition, HCI systems need security to confirm user authentication, which is a crucial issue in these systems. Hence, user authentication is vital, allowing only authorized users to access data. Authentication is critical to the digital world since it provides security and safety for digital data. Moreover, a digital signature is an authentication method to confirm the accuracy and reliability of digital documents or communications. In addition, designing the circuit based on the complementary metal-oxide semiconductor (CMOS) technology can affect the security and safety of digital data due to the excessive heat dissipation of circuits. On the other hand, quantum-dot cellular automata (QCA) and reversible logic as alternative technologies to CMOS address these problems. Since QCA and reversible logic circuits have minimal energy dissipation, which is considered nearly zero, approaching these technologies proves extremely difficult for any hacker. This work presents an effective structure for the authenticator and human-computer interaction using QCA and IBM quantum computing with Qiskit simulations. The proposed structure has outperformed current circuits in terms of area, cell count, and latency. The paper demonstrates the QCA reversible logic layout of the proposed HCI authenticator and integrates IBM quantum computing simulations using Qiskit for validation. The implementation and testing of results are performed utilizing QCADesigner-2.0.3 and Qiskit simulation tools. The accuracy and efficiency of the proposed design are validated through simulation-derived comparison values, and energy dissipation simulations prove that the suggested circuit dissipates minimal energy.</p></div>","PeriodicalId":7827,"journal":{"name":"Analog Integrated Circuits and Signal Processing","volume":"124 1","pages":""},"PeriodicalIF":1.2,"publicationDate":"2025-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143908756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance-driven OFET design for advanced hydrogen gas sensing applications","authors":"Yogesh Thakur,&nbsp;Mamta Khosla,&nbsp;Balwinder Raj","doi":"10.1007/s10470-025-02420-1","DOIUrl":"10.1007/s10470-025-02420-1","url":null,"abstract":"<div><p>Hydrogen gas sensing, a crucial area of research with wide-ranging applications, was significantly advanced by the findings of this study. Because they can identify leaks and stop any risks, hydrogen (H₂) gas sensors are crucial for safety in sectors that use fuel-cell technology, hydrogen generation, and storage. They are also essential for developing H₂ as a power source and environmental monitoring. Analyzing the effects of changes in semiconductor channel thickness on the functionality of organic field-effect transistors (OFETs) in H₂ gas detection is a critical component of this study. The study concentrated on channel thickness between 15 and 45 nm, analyzing how these differences affect the sensitivity through ON and OFF current changes. In this work, a platinum (Pt) gate electrode was used to detect H₂ gas using a top-gate top-contact (TGTC) design. Hydrogen gas causes the electrical characteristics of the sensor to vary, enabling effective detection by tracking modifications in the field-effect behavior of the active layer. The simulation results show a trade-off between sensitivity, device performance, and channel thickness, highlighting the importance of optimizing the channel thickness during fabrication to increase sensitivity. Channel thickness is crucial for stability and sensitivity in OFET-based gas sensors; thinner channels are associated with lower durability, whereas thicker channels lead to lower performance. To maximize the total sensor performance, this analysis aims to achieve an equilibrium between low-cost fabrication and sensitivity. These observations provide helpful directions for the development and fabrication of extremely sensitive low-cost hydrogen gas sensors.</p></div>","PeriodicalId":7827,"journal":{"name":"Analog Integrated Circuits and Signal Processing","volume":"123 3","pages":""},"PeriodicalIF":1.2,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143888663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two dimensional chaotic scheme for image encryption in FPGA","authors":"Pradipta Sarkar,&nbsp;Anup Kumar Das,&nbsp;Aloke Saha,&nbsp;Mrinal Kanti Mandal","doi":"10.1007/s10470-025-02401-4","DOIUrl":"10.1007/s10470-025-02401-4","url":null,"abstract":"<div><p>Transmitting data via the Internet has always posed significant security threats. Before and after the epidemic, there have been reports of an increase in hacking and infiltration cases in proportion to the number of digital transactions. As a result, there is a greater need for secure financial transactions. This field of study suggests using chaotic sequences, complex keys, and bit shuffling in encryption algorithms as a secure method for encrypting and decrypting images in a software and hardware environment. In order to ensure that the encryption meets the requirements, this article employs a variety of approaches and performance evaluations, such as histogram analysis, correlation, NPCR, UACI, the NIST test, MAE, and entropy analysis. This article describes how to use an FPGA board with a novel chaotic map that is two-dimensional and initialised using complex bit and key shuffling to encrypt colour images for security enhancement.</p></div>","PeriodicalId":7827,"journal":{"name":"Analog Integrated Circuits and Signal Processing","volume":"123 3","pages":""},"PeriodicalIF":1.2,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143883765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low voltage low power FGMOS based current mirror with improved performance","authors":"Akshdeep Kumar,&nbsp;Rakshit Srivastava,&nbsp;Richa Srivastava,&nbsp;Garima Varshney,&nbsp; Pravesh","doi":"10.1007/s10470-025-02399-9","DOIUrl":"10.1007/s10470-025-02399-9","url":null,"abstract":"<div><p>In this paper a low voltage low power FGMOS based cascode current mirror is proposed. The use of FGMOS transistor improves the performance of the proposed current mirror in terms of output impedance, current accuracy, power consumption and input/output voltage requirements. The circuit has power consumption of 16.2 μW, the input and output voltage requirement 0.24 V and 0.14 V and output impedance of 27.92 GΩ. In order to assess the robustness of the proposed current mirror, the circuit has been simulated under various conditions, including different process corners, variations in supply voltage, and temperature changes (PVT variations). The Monte-Carlo analysis has also been done to further validate the robustness of the proposed current mirror. Additionally; to analyse the linearity of the proposed current mirror, total harmonic distortion (THD) has been simulated. The layout of the proposed circuit has been incorporated, along with post-layout simulations. To confirm the validity of the proposed current mirror it has been used to design current mode full wave rectifier. All the simulations have been done using SPICE 180 nm CMOS technology parameters.</p></div>","PeriodicalId":7827,"journal":{"name":"Analog Integrated Circuits and Signal Processing","volume":"123 3","pages":""},"PeriodicalIF":1.2,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143883766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimal charging of nonlinear capacitors in RC and LRC circuits with bypass resistor","authors":"Lingen Chen,&nbsp;Shaojun Xia","doi":"10.1007/s10470-025-02398-w","DOIUrl":"10.1007/s10470-025-02398-w","url":null,"abstract":"<div><p>The optimal-charging problem of nonlinear capacitors in RC and LRC circuits with bypass resistor is investigated by utilizing finite-time thermodynamics. Under condition that both charging time and total energy stored in capacitors are given, the optimal time-paths of source-voltage and capacitor-voltage for the minimum Joule heat dissipation of circuits are determined by applying optimal-control theory. Analytical solutions for linear capacitor case are derived based on universal optimal results, and optimal strategies are also compared with linear and constant source-voltage operation charging strategies. While for the nonlinear capacitor cases, numerical solutions are obtained, and effects of various parameters on optimal results are analyzed.</p></div>","PeriodicalId":7827,"journal":{"name":"Analog Integrated Circuits and Signal Processing","volume":"123 3","pages":""},"PeriodicalIF":1.2,"publicationDate":"2025-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143877723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Antenna design for RFID: a comparative investigation in near field communication and electronic article surveillance systems","authors":"Muhammad Noaman Zahid,&nbsp;Liu Jiajun","doi":"10.1007/s10470-025-02403-2","DOIUrl":"10.1007/s10470-025-02403-2","url":null,"abstract":"<div><p>This paper presents an overview of antenna designs for passive radio frequency identification (RFID) tags for near field communication (NFC) and electronic article surveillance (EAS) systems. We discussed several antenna designs such as handheld reader antennas and fixed reader antennas for various applications. The paper also provides a brief discussion on RFID technology with its current state-of-the-art applications. We compare NFC and EAS technologies by reviewing contemporary research in these with reported antenna designs and applications. The paper discusses the design procedure for these antennas along with their characteristics and results. Moreover, the results presented by different researchers have been discussed in detail. It has been observed from the presented literature that RFID technology is key to many existing as well as future applications.</p></div>","PeriodicalId":7827,"journal":{"name":"Analog Integrated Circuits and Signal Processing","volume":"123 3","pages":""},"PeriodicalIF":1.2,"publicationDate":"2025-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143877719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A voltage reference implemented in GaAs pHEMT for SoC application","authors":"Tingwei Gong,&nbsp;Zhiqun Cheng,&nbsp;Zhekan Ni,&nbsp;Chao Le,&nbsp;Daopeng Li,&nbsp;Xuefei Xuan,&nbsp;Zhiwei Zhang,&nbsp;Bangjie Zheng","doi":"10.1007/s10470-025-02368-2","DOIUrl":"10.1007/s10470-025-02368-2","url":null,"abstract":"<div><p>Using III-V compound semiconductor materials, particularly gallium arsenide (GaAs) devices instead of compared to silicon-based complementary metal oxide semiconductor, a voltage reference (VR) circuit applied for radio frequency (RF) applications with significant advantages in RF performance is proposed in the paper. Given lattice defects, GaAs pseudomorphic high electron mobility transistor (pHEMT) technology faces difficulties in realizing P-channel metal oxide semiconductor devices, necessitating new circuit structures to achieve the functionality of traditional VRs. To leverage the superior RF performance of compound semiconductors in implementing RF transceiver systems-on-chip, this paper proposes a VR based on GaAs pHEMT technology. The proposed VR circuit was fabricated and tested using a 0.15 μm GaAs pHEMT process. The test results demonstrated that the designed VR circuit exhibits a current load capability of 17 mA, a temperature coefficient of 186 ppm/℃, and a power line regulation of 22.5 mV/V. This VR circuit occupies a total chip area of 0.2 mm² and can be applied to wireless fidelity or other transceiver systems.</p></div>","PeriodicalId":7827,"journal":{"name":"Analog Integrated Circuits and Signal Processing","volume":"123 3","pages":""},"PeriodicalIF":1.2,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143871174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}