Advances in x-ray analysis最新文献

Determination of thickness and composition of thin Al{sub x}Ga{sub 1-x}As layers on GaAs by total electron yield (TEY) 用总电子产率(TEY)测定GaAs上Al{sub x}Ga{sub 1-x}As薄层的厚度和组成

Advances in x-ray analysis Pub Date : 1995-12-31 DOI: 10.1154/s0376030800017729

M. Ebel, R. Svagera, H. Ebel, Robert Hobl, M. Mantler, J. Wernisch, N. Zagler

{"title":"Determination of thickness and composition of thin Al{sub x}Ga{sub 1-x}As layers on GaAs by total electron yield (TEY)","authors":"M. Ebel, R. Svagera, H. Ebel, Robert Hobl, M. Mantler, J. Wernisch, N. Zagler","doi":"10.1154/s0376030800017729","DOIUrl":"https://doi.org/10.1154/s0376030800017729","url":null,"abstract":"The measurement of the total electron yield (TEY) emitted from a solid specimen when irradiated by monochromatic x-rays is used for quantitative information on the specimen. For this purpose one has to determine the increase of TEY in the course of a variation of the photon energy from below to above the absorption edges of the specimen elements. These increases are the analytical quantities and are correlated with the composition of the specimen. The detected electrons are photo, Auger and secondary electrons. Most of them lost some of their original kinetic energy due to inelastic collisions along their path from the atom of origin to the surface. Low energy electrons are especially found in the secondary electron peak with electron energies of less than 20eV. Electrically nonconductive specimens under x-irradiation tend to positive surface charging. Thus, the relatively high flux of secondary electrons is more or less rejected by the grounded electron detector entrance. The amount of rejected secondary electrons depends on the charging potential. In order to avoid this charging dependent contribution to the TEY-increase the electron detector entrance is set to a negative bias and prevents generally low energy electrons from detection. It is the aim of themore » present investigations to extend the field of application of TEY from quantitative analysis of bulk specimens to thin films and to compare the results obtained by TEY with results from x-ray fluorescence analysis (XRF), electron probe micro analysis (EPMA) and x-ray photoelectron spectrometry (XPS). This comparison allows to demonstrate the application of TEY. For verification of the theoretical considerations, Al{sub x}Ga{sub 1-x}As layers on GaAs have been chosen. Values of layer thicknesses were in the range from 20 to 120 nm. An essential feature of TEY for this specific application is the escape depth of the electrons of approximately 100nm. 7 refs., 9 figs., 5 tabs.« less","PeriodicalId":7518,"journal":{"name":"Advances in x-ray analysis","volume":"40 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82298198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Residual stress and microstructural characterization using Rietveld refinement of a carburized layer in a 5120 steel 利用Rietveld细化5120钢渗碳层的残余应力和显微组织表征

Advances in x-ray analysis Pub Date : 1995-09-01 DOI: 10.2172/106610

P. Rangaswamy, M. Bourke, A. Lawson, J. Orourke, J. Goldstone

引用次数: 2

Techniques for the Determination of Particle Size and Texture in Retained Austenite / Martensite Microstructures and Interpretation of the Measurements 残余奥氏体/马氏体显微组织中粒度和织构的测定技术及测量结果的解释

Advances in x-ray analysis Pub Date : 1995-01-01 DOI: 10.1154/S0376030800022898

J. Makinson, W. N. Weins, Y. Xu, D. Medlin, R. V. Lawrence

引用次数: 0

Residual Stress of Aluminum Thin Films Sputtered on Silicon Wafers Measured by X-Ray Diffraction 用x射线衍射测量铝薄膜溅射在硅片上的残余应力

Advances in x-ray analysis Pub Date : 1995-01-01 DOI: 10.1154/S0376030800022679

Keisuke Tanaka, K. Ishihara, Y. Akiniwa

引用次数: 0

X-Ray Stress Measurement of Ni-Ai System Intermetallic Compounds Ni-Ai系金属间化合物的x射线应力测量

Advances in x-ray analysis Pub Date : 1995-01-01 DOI: 10.1154/S0376030800022643

Tokimasa Goto, Hiroyuki Tabata, Y. Hirose

引用次数: 0

A Polycrystalline Thin Film Diffractometer for Asymmetric Diffraction Using Parallel Beam and High Resolution Parallel Slits 采用平行光束和高分辨率平行狭缝的非对称衍射多晶薄膜衍射仪

Advances in x-ray analysis Pub Date : 1995-01-01 DOI: 10.1154/S0376030800022576

H. Toraya, J. Yoshino

引用次数: 1

Comparison of Modelled and Experimental Data for the NixRu1-xAl Intermetaixic Compound in the Ni-Ru-Al Ternary System Ni-Ru-Al三元体系中NixRu1-xAl中间体的模拟与实验数据比较

Advances in x-ray analysis Pub Date : 1995-01-01 DOI: 10.1154/S037603080002320X

A. Harte, P. M. Hung, I. Horner, N. Hall, L. Cornish, M. Witcomb

引用次数: 1

An Order of Magnitude Improvement in Detection Limits Achieved by Using a New Sample Support in Small Spot Xrf Analysis. 在小点Xrf分析中使用新的样品支架，检测限提高了一个数量级。

Advances in x-ray analysis Pub Date : 1995-01-01 DOI: 10.1154/S0376030800023260

A. Nielson, D. Turner, Alisa A. Wilson, D. Wherry, R. Wong

引用次数: 5

100 Years of Progress in X-Ray Fluorescence Analysis x射线荧光分析的百年进展

Advances in x-ray analysis Pub Date : 1995-01-01 DOI: 10.1154/S0376030800022424

J. Gilfrich

引用次数: 7

What Can Crystallography Tell us About the Intermediate Range Order in Borate Glasses 晶体学对硼酸盐玻璃的中间阶序有何启示

Advances in x-ray analysis Pub Date : 1995-01-01 DOI: 10.1154/S0376030800022965

A. Wright, N. Vedishcheva, B. A. Shakhmatkin

引用次数: 3