2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)最新文献_第6页

Research and Development of Rear Combined Lamp Detection System Based on Machine Vision 基于机器视觉的后灯组合检测系统的研究与开发

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS) Pub Date : 2021-12-06 DOI: 10.1109/SSLChinaIFWS54608.2021.9675161

Pan Mingqing, Wang Huailei, Luo Xu, Deng Liang

引用次数: 0

Spectral Design Considerations of White LED for Classroom Application 教室应用白光LED的光谱设计

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS) Pub Date : 2021-12-06 DOI: 10.1109/SSLChinaIFWS54608.2021.9675230

J. G. Liu, H. Zhu, Lei Zhu, Chong-yu Shen, Ruping Zheng, Yousan Chen, Jianxing Xu

{"title":"Spectral Design Considerations of White LED for Classroom Application","authors":"J. G. Liu, H. Zhu, Lei Zhu, Chong-yu Shen, Ruping Zheng, Yousan Chen, Jianxing Xu","doi":"10.1109/SSLChinaIFWS54608.2021.9675230","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675230","url":null,"abstract":"The improved efficiency of Phosphor-converted white LED devices and fixtures along with the significant cost down effort have led to tremendous market growth in almost every lighting application. However, the high-energy blue proportion of phosphor-converted white LED has raised concern about photochemically induced retinal damages. For applications such as classroom lighting, the blue light hazard reduction along with other parameters such as illuminance, illuminance uniformity, colour rendering, flicker, glare are all important considerations. In the paper, we present two different LED package designs and their spectral power distribution (SPD) characters suitable for classroom lighting. The first design uses common approach of single wavelength blue LED chip to excite multiple phosphors to achieve high colour rendering of Ra98. The second design uses two different wavelength blue LED chips combined with phosphors to further reduce the high energy blue light while maintaining colour rendering of Ra98. The LED package of the second design approach is found to be more suitable and is therefore built into fixtures and implemented in a classroom. The lighting design of the classroom using Dailux simulation tools is also presented. Key parameters are then measured to meet the lighting quality standard of GB 7793–2010 for classroom application.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"20 1","pages":"109-113"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73716650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Suppression of Mg Propagate into Subsequent Layers by Furnace Annealing 炉内退火法抑制Mg向后续层的扩散

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS) Pub Date : 2021-12-06 DOI: 10.1109/SSLChinaIFWS54608.2021.9675233

Wenxin Tang, L. Zhang, Xing Wei, Jiaan Zhou, Weining Liu, Zengli Huang, Guohao Yu, Baoshun Zhang

{"title":"Suppression of Mg Propagate into Subsequent Layers by Furnace Annealing","authors":"Wenxin Tang, L. Zhang, Xing Wei, Jiaan Zhou, Weining Liu, Zengli Huang, Guohao Yu, Baoshun Zhang","doi":"10.1109/SSLChinaIFWS54608.2021.9675233","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675233","url":null,"abstract":"Multilayers and trench MOS structures have been involved to investigate the diffusion behavior of Mg atoms and the corresponded electrical properties. Four groups of p-n + stacked layers were grown to study the effect of different interfacial treatment. The growth conditions of these four groups were identical except for different interfacial treatment during the growth, including as grown, furnace annealing, AlGaN interlayer and furnace annealing with AlGaN interlayer. Furnace annealing refers to 850°C for 10 min in a nitrogen atmosphere in MOCVD and AlGaN interlayer means a 50 nm Si-doped $text{Al}_{0.08}text{Ga}_{0.92}mathrm{N}$ layers have been inserted. The slope of the Mg concentration for the furnace annealing sample is 90 s/dec-less than 63% of the as-grown sample. SIMS results also reveals that furnace annealing introduce an interface with a low conductivity while an improved sheet resistance of subsequent n + layer from 630 Ω/Ÿ to 415 Ω/Ÿ. Especially, the sum of resistance, including the drain and source contact resistance, contact layer resistance (RS and RD) and channel resistance (RCH), decreased from 151.5 Ω.mm to 125.9 Ω.mm via furnace annealing which has been verified by quasi-vertical n+-p-unintentionally doped (n+-p-uid) GaN-on-GaN trench MOS structure with different trench width. Furnace annealing has been successfully used to prevent Mg atoms from Metalorganic Chemical Vapor Deposition (MOCVD) grown p-GaN:Mg layers riding into subsequently deposited n+-type layer and improve the electrical characteristic of sheet resistance and ON-resistance in the device of trench MOS structure. This work shows a great reference value for GaN with a buried p-GaN structure.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"76 1","pages":"78-81"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81046795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The research of LED controlgear products by quality comparison and promotion 通过质量比较和推广，对LED控制装置产品进行研究

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS) Pub Date : 2021-12-06 DOI: 10.1109/SSLChinaIFWS54608.2021.9675268

Benliang Li, Liwen Gu

引用次数: 0

Overview of Finite-Element Analysis in Simulation of SiC Power Device Packaging SiC功率器件封装仿真中的有限元分析综述

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS) Pub Date : 2021-12-06 DOI: 10.1109/SSLChinaIFWS54608.2021.9675174

Liangtao Li, Jiuyang Tang, J. Zhang, Jing Zhang, Yingcan Zhu, Guoqi Zhang, Pan Liu

{"title":"Overview of Finite-Element Analysis in Simulation of SiC Power Device Packaging","authors":"Liangtao Li, Jiuyang Tang, J. Zhang, Jing Zhang, Yingcan Zhu, Guoqi Zhang, Pan Liu","doi":"10.1109/SSLChinaIFWS54608.2021.9675174","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675174","url":null,"abstract":"The development of silicon-based high-power devices, e.g. IGBTs, has reached its application limits in terms of high-temperature and high-frequency harsh operating conditions. Wide bandgap (WBG) power devices (such as silicon carbide, SiC) are currently one of the most promising power devices for replacement. Due to their intrinsic bandgap, SiC high-power devices have proven their superior performance in high-frequency and high-temperature working scenarios. With the increasing demand of high-power semiconductor devices in industries such as new-energy vehicles, high-speed railway systems, and aerospace, the conditions of SiC power semiconductor devices have become more and more complex, which brings challenges to electronic packaging technology. Due to thermal management and reliability requirements for SiC power devices, customized advanced heat dissipation structures, and high-temperature soldering materials have been introduced in power device packaging technology. The reliability verification of these new electronic packaging technologies is often time-consuming and labor-intensive, so designers hope to obtain results consistent with actual experimental data through the utilization of computer-aided design methods, such as finite-element analysis (FEA), which will greatly reduce the number of iterations of physical prototypes and the development time. This article reviewed and discussed the application of FEA in the latest packaging technology, including the extraction of the thermal resistance network of the SiC power module, the thermal simulation of the novel efficient cooling structure, the thermo-mechanical analysis of the high-temperature packaging material, and the long-term reliability FEA of the SiC power devices.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"35 1","pages":"53-57"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90872193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

All-Inorganic Quantum Dot Nanocomposite for On-Chip LED Application 片上LED应用的全无机量子点纳米复合材料

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS) Pub Date : 2021-12-06 DOI: 10.1109/SSLChinaIFWS54608.2021.9675158

L. Zhang, C. Shen, R. An, C. Geng, J. Liu, S. Xu

引用次数: 0

Ocular physiological responses to dynamic and constant screen brightness 眼睛对动态和恒定屏幕亮度的生理反应

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS) Pub Date : 2021-12-06 DOI: 10.1109/SSLChinaIFWS54608.2021.9675193

Shanshan Zeng, Wentao Hao, Ya Guo, Yuechao Wang, Jianfeng Fu, Guangming Wang, Jianqi Cai

引用次数: 0

TCAD Simulation of Dual-Gate p-GaN/AlGaN/GaN HEMT Bidirectional Switch 双栅p-GaN/AlGaN/GaN HEMT双向开关的TCAD仿真

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS) Pub Date : 2021-12-06 DOI: 10.1109/SSLChinaIFWS54608.2021.9675261

Fan Li, Yubo Wang, Chenjie Yuan, Ruize Sun, Chengmurong Ding, Miao Cui, Yinchao Zhao, H. Wen, Wen Liu

引用次数: 1

Low-Phase-Noise and Low-Power Wideband VCO Optimization Using Multi-Finger Technique 基于多指技术的低相位噪声和低功耗宽带压控振荡器优化

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS) Pub Date : 2021-12-06 DOI: 10.1109/SSLChinaIFWS54608.2021.9675145

Caozheng Zhang, Libo Zheng, Jinghao Yu, Pengfei Ye, Yi Liu

{"title":"Low-Phase-Noise and Low-Power Wideband VCO Optimization Using Multi-Finger Technique","authors":"Caozheng Zhang, Libo Zheng, Jinghao Yu, Pengfei Ye, Yi Liu","doi":"10.1109/SSLChinaIFWS54608.2021.9675145","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675145","url":null,"abstract":"With the rapid development of information technology, the brisk pace of cloud computing platform technology (such as Internet of Things, cloud computing, big data) is now profoundly reshaping our lifestyle. Among this great revolution, wireless communication based on radio-frequency devices (e.g. Phase-Locked Loop with high-performance VCO) plays a vital role in the terminal application. Here, a wideband cross-coupled inductance-capacitance (LC) voltage-controlled oscillator (VCO) is proposed. The Multi-Finger technique is utilized to reduce phase noise of the VCO. The phase noise depends on the Q-factor of the device. The parasitic resistance of the inductor increases due to skin and proximity effect in high frequency. In this study, we use a multi-finger inductor to improve Q-factor. Phase noise is 102.57 dBc/Hz at 1-MHz offset from 11.2 GHz oscillation frequency and the static current is 0.9 mA from 1.2 V supply voltage while the frequency tuning range is 29.0%, indicating the great potential for the communication application.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"114 1","pages":"61-64"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87946839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reliability of Electronic Drivers: An Industrial Approach 电子驱动器的可靠性:一种工业方法

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS) Pub Date : 2021-10-26 DOI: 10.1115/ipack2021-72293

P. Watté, G. van Hees, R. Engelen, W. V. van Driel, Tianfu Chen

{"title":"Reliability of Electronic Drivers: An Industrial Approach","authors":"P. Watté, G. van Hees, R. Engelen, W. V. van Driel, Tianfu Chen","doi":"10.1115/ipack2021-72293","DOIUrl":"https://doi.org/10.1115/ipack2021-72293","url":null,"abstract":"Reliability of electronic drivers, or systems, is crucial for the business of Signify. We manufacture and sell more than a million drivers per year. Field returns taught us what failure modes are important, but this is not sufficient to provide lifetime claims for our products. Being in this business for almost a century, in order to provide detailed lifetime claims, we have established an internal reliability tool. This tool provides our designers the correct information for flawless driver development. The specially developed Electronics Reliability Tool (ERT) uses on the one hand FIT tables provided by handbooks like e.g., Telcordia and on the other hand also considers wear-out mechanisms due to e.g., lightning strikes. Validation and verification of our predictions is performed by collecting sold quantities, field returns, do extensive failure analysis and compare these values with calculated ones. Each internally designed driver is subjected to an ERT calculation. The forecasted lifetime is used as a yard stick to witness the drivers' targeted lifetime. In our presentation we will demonstrate the tool. In this paper, we describe details of how ERT calculates failure rates. We will also present the comparison between field performance and calculated values of our electronic drivers.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"101 1","pages":"246-249"},"PeriodicalIF":0.0,"publicationDate":"2021-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80388833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0