2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)最新文献

Improved Ohmic Contact Performance on Undoped AlGaN/GaN HEMTs Using by Ternary Alloy Predeposition 三元合金预沉积提高未掺杂AlGaN/GaN hemt的欧姆接触性能

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS) Pub Date : 2021-12-06 DOI: 10.1109/SSLChinaIFWS54608.2021.9675188

Hao Lu, Bin Hou, Ling Yang, Teng Huo, Zeyan Si, Meng Zhang, Mei Wu, Xiao-hua Ma, Y. Hao

{"title":"Improved Ohmic Contact Performance on Undoped AlGaN/GaN HEMTs Using by Ternary Alloy Predeposition","authors":"Hao Lu, Bin Hou, Ling Yang, Teng Huo, Zeyan Si, Meng Zhang, Mei Wu, Xiao-hua Ma, Y. Hao","doi":"10.1109/SSLChinaIFWS54608.2021.9675188","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675188","url":null,"abstract":"In this paper, we have proposed a novel ohmic contact on undoped AlGaN/GaN heterostructures using the ternary SixTiyAl alloy pre-deposition ohmic contacts to reduce the contact resistance (RC) and improve the ohmic surface morphology. The use of ternary alloys simultaneously achieves n-type doping of barrier material by thermal annealing of Si and uniform Ti/Al contact with semiconductors. The systematical investigation of the parameters, including the pre-deposition layer and annealing temperature, have been performed. Low contact resistance of 0.34 Ω'mm and a specific resistivity (ρC) of 2.9 × 10−6 Ω.cm2 was achieved for the proposed metal scheme annealed at 900°C, which was superior compared with conventional Ti/Al/Ni/Au ohmic contacts (8.3 × 10−6 Ω.cm2, 0.56 Ω.mm). Atomic force microscope (AFM) compares the surface root mean square (RMS) roughness of the varied samples at the different annealing temperature. Through the results presented here, the ternary alloyed layer has significant advantages over monolayer Si or reference sample. These results are believed to facilitate the process of the GaN HEMT applied for next-generation communication systems.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"45 1","pages":"65-67"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73802491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Fast Calculation Model for Parasitic Inductance of SiC Power Devices SiC功率器件寄生电感的快速计算模型

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS) Pub Date : 2021-12-06 DOI: 10.1109/SSLChinaIFWS54608.2021.9675187

Lei Song, M. Cai, Hengjian He, Kailin Zhang

{"title":"A Fast Calculation Model for Parasitic Inductance of SiC Power Devices","authors":"Lei Song, M. Cai, Hengjian He, Kailin Zhang","doi":"10.1109/SSLChinaIFWS54608.2021.9675187","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675187","url":null,"abstract":"Silicon carbide (SiC) power device has a leap forward improvement in various performance indexes compared with the existing silicon-based power devices, and is suitable for higher frequency working occasions. Its high switching speed makes it more sensitive to stray parameters and easier to cause voltage and current oscillation. Therefore, reducing the inductance of power module has become the key to module design. Usually when designing the layout of the power module, it is necessary to establish the 3d model and then use the Q3d software to extract the internal circuit inductance of the device. The process is complicated and the design cycle is long. To solve this problem, this article focuses on the rapid evaluation method of loop inductance in the process of power module layout design, and proposes a faster, simpler, and relatively accurate calculation model based on the existing theories - Inductance Calculation Model of Arbitrary Shape Open-loop Circuit. Then, the convenience and accuracy of the equivalent closed loop model are verified by calculating three different IGBT layout loop inductances. This method is conducive to the rapid iteration of the power module layout design and shortens the design cycle.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"102 1","pages":"29-32"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80515275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Simulation study on thermal mechanical properties of 4×4 Micro-LED array in flip-chip bonding process 4×4微型led阵列倒装键合过程热力学性能仿真研究

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS) Pub Date : 2021-12-06 DOI: 10.1109/SSLChinaIFWS54608.2021.9675238

Xiaoxiao Ji, Fei Wang, Luqiao Yin, Jianhua Zhang

引用次数: 0

Avalanche Robustness of 1.2kV SiC MOSFET with Integrated Junction-Barrier-Schottky Diode and Gate Leakage Current Analysis 集成结势垒肖特基二极管的1.2kV SiC MOSFET雪崩稳健性及栅极漏电流分析

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS) Pub Date : 2021-12-06 DOI: 10.1109/SSLChinaIFWS54608.2021.9675259

Chongyu Jiang, Hongyi Xu, Zijian Gao, Na Ren, Qing Guo, Kuang Sheng

引用次数: 0

Diamond Metal-Semiconductor Field-Effect-Transistor-based Solar Blind Detector 基于金刚石金属半导体场效应晶体管的太阳盲探测器

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS) Pub Date : 2021-12-06 DOI: 10.1109/SSLChinaIFWS54608.2021.9675152

Lei Ge, Yan Peng, Xiwei Wang, Dufu Wang, Mingsheng Xu, Xiangang Xu

引用次数: 1

Si Implantation in GaN at Elevated Temperatures 高温下氮化镓中Si的注入

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS) Pub Date : 2021-12-06 DOI: 10.1109/SSLChinaIFWS54608.2021.9675262

Zheming Wang, Liguo Zhang, Rongkun Ji, Xuan Zhang, Yong Cai, B. Zhang

引用次数: 0

Study on Thermal Transient Measurement Method and Mechanism of GaN HEMT Power Devices 氮化镓HEMT功率器件热瞬态测量方法及机理研究

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS) Pub Date : 2021-12-06 DOI: 10.1109/SSLChinaIFWS54608.2021.9675258

Xi Li, Wei Gao, Yanwei Shan, Bo Zhang

{"title":"Study on Thermal Transient Measurement Method and Mechanism of GaN HEMT Power Devices","authors":"Xi Li, Wei Gao, Yanwei Shan, Bo Zhang","doi":"10.1109/SSLChinaIFWS54608.2021.9675258","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675258","url":null,"abstract":"A novel power semiconductor device, GaN HEMT, has the advantages of high power density and high operating frequency. Thermal problems are caused by high power operation of the device, however, there is no specific test standard for GaN HEMT thermal resistance at present. For GaN HEMT devices with high gate impedance, the method of using gate source diode to extract junction temperature is not suitable. Therefore, in this paper, we used the on-resistance of the device as the thermal parameter of this type of device, but it is found in the test that the on-resistance of the device is unstable due to the threshold voltage drift, which leads to poor repeatability of the thermal resistance test results of the same device. The addition of high temperature baking in the post test restores the threshold voltage of the device to the initial state, so as to achieve the purpose of stable and repeatable thermal resistance test results of GaN HEMT devices. In addition, this paper does an in-depth analysis of the mechanism of poor thermal resistance test repeatability for this type of device.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"31 1","pages":"231-234"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74435220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Research on Evaluation of Lighting Design for Cruise Interior Public Space: a Case study of Costa Venezia Cruise 邮轮内部公共空间照明设计评价研究——以歌诗达威尼斯号为例

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS) Pub Date : 2021-12-06 DOI: 10.1109/SSLChinaIFWS54608.2021.9675175

Ge Wenjing, Jiang Minyu, Cao Jing, Yang Xiu

{"title":"Research on Evaluation of Lighting Design for Cruise Interior Public Space: a Case study of Costa Venezia Cruise","authors":"Ge Wenjing, Jiang Minyu, Cao Jing, Yang Xiu","doi":"10.1109/SSLChinaIFWS54608.2021.9675175","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675175","url":null,"abstract":"This paper presented the process and results of the questionnaire survey and brightness measurement toward the lobby and corridor space of Costa Venezia Cruise. The questionnaire content includes Visual Perception and Lighting Evaluation. The brightness measurement contents include average brightness, maximum brightness, glare index. The conclusion reached are as follows: 1)subjects are highly satisfied with the lighting environment of the lobby, 41%(13 subjects) of the subjects rated uncomfortable / comfortable as 6, uneven / uniform and cold / warm as 5; 2) 14% (4 subjects) and 7% (2 subjects) of the subjects rated dazzling / non-dazzling at the corridor as −2, −1 respectively; 3)If the 0–3 evaluation is defined as satisfactory, the average satisfaction degree of the Visual Perception and Lighting Evaluation of the lobby and corridor will reach more than 90%; 4)The difference toward the average brightness between the lobby and the corridor is not large, and the ratio is 1: 1.5; the difference toward the maximum brightness is large, the ratio is 1: 60; 5)Within a certain range of the brightness value changes, Visual Perception evaluation satisfaction and the indoor brightness show a significant negative correlation.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"1 1","pages":"165-168"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81947169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Degradation of 4H-SiC Trench MOSFET under single and repetitive short-circuit stress 单次和重复短路应力下4H-SiC沟槽MOSFET的退化

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS) Pub Date : 2021-12-06 DOI: 10.1109/SSLChinaIFWS54608.2021.9675237

Yuan Zou, Jue Wang, Li Liu, Hongyi Xu, Hengyu Wang, Kuang Sheng

引用次数: 0

Research on Glare-free Lamps Based on the Concept of Effective Luminous Flux 基于有效光通量概念的无眩光灯研究

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS) Pub Date : 2021-12-06 DOI: 10.1109/SSLChinaIFWS54608.2021.9675184

Bing Zhang, Pengjie Cui, Haitian Zhao

{"title":"Research on Glare-free Lamps Based on the Concept of Effective Luminous Flux","authors":"Bing Zhang, Pengjie Cui, Haitian Zhao","doi":"10.1109/SSLChinaIFWS54608.2021.9675184","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675184","url":null,"abstract":"The intensity of glare in Low Mounting Height Luminaires(LMHL) is positively correlated with the light output efficiency of the lamps. The light interceptor that eliminates glare will cause the light output efficiency of the lamps to be extremely low. This paper analyzes the light output of the street lamps based on the driver's visual needs, and puts forward the concept of effective luminous flux for road lighting. The street lamp light is divided into three parts: effective luminous flux, invalid luminous flux and harmful luminous flux; according to the concept of effective luminous flux, a multi-channel luminaire structure is designed to convert invalid luminous flux into effective luminous flux and eliminate harmful luminous flux. The software simulation experiment verifies the relationship between the luminous efficiency of the lamp and the number of channels, and the final sample is made to prove the feasibility of the structure. The experimental results show that the luminous efficiency of the luminaire has a linear relationship with the number of channels. It is 67%; the light output efficiency of the dual-channel sample is increased by 34% compared with the single-channel sample; the light output efficiency of the four-channel sample is increased by 92% compared to the single-channel sample. Therefore, the multi-channel luminaire structure can simultaneously solve the problems of intense glare and high energy consumption in LMHL.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"11 1","pages":"125-130"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76439209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0