2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC)最新文献_第10页

Die-to-Wafer 3D Interconnections Operating at Sub-Kelvin Temperatures for Quantum Computation 用于量子计算的亚开尔文温度下的晶圆对晶圆3D互连

2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC) Pub Date : 2020-09-15 DOI: 10.1109/ESTC48849.2020.9229657

C. Thomas, J. Charbonnier, A. Garnier, N. Bresson, F. Fournel, S. Renet, R. Franiatte, N. David, V. Thiney, M. Urdampilleta, T. Meunier, M. Vinet

{"title":"Die-to-Wafer 3D Interconnections Operating at Sub-Kelvin Temperatures for Quantum Computation","authors":"C. Thomas, J. Charbonnier, A. Garnier, N. Bresson, F. Fournel, S. Renet, R. Franiatte, N. David, V. Thiney, M. Urdampilleta, T. Meunier, M. Vinet","doi":"10.1109/ESTC48849.2020.9229657","DOIUrl":"https://doi.org/10.1109/ESTC48849.2020.9229657","url":null,"abstract":"To reach quantum supremacy, large scale integration of quantum bits through three dimensional (3D) architectures functional at sub-Kelvin temperatures is required. Electrical signals are transferred by 3D interconnects which need to be carefully designed in term of materials and dimensions to optimize the whole system performance. To that end, 20 μm pitch daisy chains with more than 20000 SnAg microbump-based interconnects and more than 1000 direct Cu bond ones have been fabricated with die-to-wafer processes developed on 300 mm Si wafers. Daisy chain resistances have been measured in a liquid nitrogen deware and in a He3 cryostat at the following thermal steps: 300 K, 77 K, 4 K and 400 mK, allowing to extract unitary link resistances to establish preliminary process design kits at these low temperatures. The mechanical and electrical robustness of these interconnects has been validated through the repeatability of the resistance measurements over several thermal cycles.","PeriodicalId":6785,"journal":{"name":"2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC)","volume":"1 1","pages":"1-7"},"PeriodicalIF":0.0,"publicationDate":"2020-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83020901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Stretchable LED matrix display 可拉伸LED矩阵显示

2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC) Pub Date : 2020-09-15 DOI: 10.1109/ESTC48849.2020.9229881

Arttu Huttunen, T. Happonen, A. Korhonen, Kaisa-Leena Väisänen, B. Amin, M. Tuomikoski, T. Alajoki

引用次数: 0

Finite Element simulations and Raman measurements to investigate thermomechanical stress in GaN-LEDs 有限元模拟和拉曼测量研究gan - led的热机械应力

2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC) Pub Date : 2020-09-15 DOI: 10.1109/ESTC48849.2020.9229843

F. Conti, E. Liu, Sri Krishna Bhogaraju, B. Wunderle, G. Elger

{"title":"Finite Element simulations and Raman measurements to investigate thermomechanical stress in GaN-LEDs","authors":"F. Conti, E. Liu, Sri Krishna Bhogaraju, B. Wunderle, G. Elger","doi":"10.1109/ESTC48849.2020.9229843","DOIUrl":"https://doi.org/10.1109/ESTC48849.2020.9229843","url":null,"abstract":"Typical failures in microelectronics range from misalignments, non-uniform filling, delamination, missing solder bumps, large voids and cracking. Many non-destructive methods are available to inspect and detect these functional faults. Raman spectroscopy and Finite Element Modeling are applied to analyze and predict stress phenomena in gallium nitride (GaN) crystals grown on sapphire and implemented in blue light emitting diodes. The LEDs are assembled onto copper substrates by AuSn reflow soldering. The manufacturing process is simulated through FEM to investigate the stress distribution on the GaN layer. To validate the model, Raman measurements are performed to study the change in position of peaks in the spectrum in relation to the stress phenomena. Compressive stress with values of ca. 1400 MPa are recorded in the central area of the LEDs. Along the borders and at the corners, relaxation processes occur. The validation of the model allows to predict the behavior of the semiconductors in different thermal regimes, between -50 and 180 °C. The stress values do not change linearly by increasing the temperature. To take AuSn creep pohenomena in the FEM into account, after cross sectioning of the assembly, nanoindentation measurements were performed and creep deformation on the AuSn interconnection was measured at room temperature.","PeriodicalId":6785,"journal":{"name":"2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC)","volume":"20 1","pages":"1-7"},"PeriodicalIF":0.0,"publicationDate":"2020-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84034072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Real embedding process of SiC devices in a monolithic ceramic package using LTCC technology 采用LTCC技术的SiC器件在单片陶瓷封装中的真实嵌入过程

2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC) Pub Date : 2020-09-15 DOI: 10.1109/ESTC48849.2020.9229653

C. Lenz, S. Ziesche, A. Schletz, Hoang Linh Bach, T. Erlbacher

{"title":"Real embedding process of SiC devices in a monolithic ceramic package using LTCC technology","authors":"C. Lenz, S. Ziesche, A. Schletz, Hoang Linh Bach, T. Erlbacher","doi":"10.1109/ESTC48849.2020.9229653","DOIUrl":"https://doi.org/10.1109/ESTC48849.2020.9229653","url":null,"abstract":"Low temperature co-fired ceramics (LTCC) is a well-established multilayer technology for the fabrication of reliable and robust ceramic circuit boards, microsystems and sensor packages. Its ability to combine several single layer which can be geometrically and functionally structured in individual and the combination of a multitude of materials co-fired to a monolithic body distinguishes this technology in particular. In this contribution we utilize the advantages of the LTCC technology to investigate a real embedding process of Silicon carbide (SiC) semiconductor devices in a ceramic multilayer substrate during the co-firing process of the ceramic. For this purpose we investigated the shrinkage behavior of three commercial LTCC material systems (GT 951, 9k7, L8) to provide \"zero-shrinkage\" of the ceramic body, which is required for a mechanical and electrical joining of solid bodies as SiC devices in the LTCC multilayer. Within these results we evaluated the embedding of 2 mm and 5 mm SiC chips by varying several parameters to evaluate a feasible material and parameter combination. Finally the embedding results in regard to the material properties of the LTCC materials are discussed.","PeriodicalId":6785,"journal":{"name":"2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC)","volume":"77 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2020-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84060538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

All Printed Flexible Piezoelectric Pressure Sensor with Interdigitated Electrodes 全印刷柔性压电压力传感器与交错电极

2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC) Pub Date : 2020-09-15 DOI: 10.1109/ESTC48849.2020.9229777

Karem Lozano Montero, Mika-Matti Laurila, M. Mäntysalo

{"title":"All Printed Flexible Piezoelectric Pressure Sensor with Interdigitated Electrodes","authors":"Karem Lozano Montero, Mika-Matti Laurila, M. Mäntysalo","doi":"10.1109/ESTC48849.2020.9229777","DOIUrl":"https://doi.org/10.1109/ESTC48849.2020.9229777","url":null,"abstract":"Owing to their cost-effective fabrication, skin-conformability, and charge generation, printed flexible piezoelectric pressure sensors based on poly(vinylidenefluoride-co-trifluoroethylene) P(VDF-TrFE) have high potential to be used in affordable, unobtrusive and energy-autonomous systems for various healthcare and robotics applications. This study presents a simple two printing step fabrication process for a thin (overall thickness of ~11 μm) flexible piezoelectric sensor based on an interdigitated electrode (IDE) structure. Inkjet printing is used to fabricate a poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) (PEDOT:PSS) IDE structure with an electrode gap width of 67.9 ± 9.4 μm and an electrode width of 137.8 ± 17.5 μm on a Parylene-C substrate. This is followed by bar coating a layer of piezoelectric polymer (P(VDF-TrFE)) of 9.6 ± 0.9 μm thick. The optimal electric field for poling the piezoelectric material is 50 V/μm which results in a remanent polarization of 5.2 ± 1.0 μC/cm2. The piezoelectric sensitivity was measured in normal mode obtaining a result of 3.9 ± 0.5 pC/N. In conclusion, this study demonstrates the potential of additive fabrication technologies to develop low-cost and conformal piezoelectric pressure sensors.","PeriodicalId":6785,"journal":{"name":"2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC)","volume":"1 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2020-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90868458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Effect of Washing Cycles on Glued Conductive Joints Used on Stretchable Smart Textile Ribbons 洗涤次数对可拉伸智能纺织带上胶接导电接头的影响

2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC) Pub Date : 2020-09-15 DOI: 10.1109/ESTC48849.2020.9229797

M. Hirman, J. Navrátil, F. Steiner, A. Hamácek

引用次数: 6

Digital Wallpaper Using Surface-Mounted LEDs 使用表面安装led的数字壁纸

2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC) Pub Date : 2020-09-15 DOI: 10.1109/ESTC48849.2020.9229663

K. Keränen, T. Happonen, Noora Heinilehto, V. Heikkinen

引用次数: 0

Process Simulation of Fan-Out Wafer Level Packaging: Influence of Material and Geometry on Warpage 扇形圆片级封装的工艺模拟:材料和几何形状对翘曲的影响

2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC) Pub Date : 2020-09-15 DOI: 10.1109/ESTC48849.2020.9229852

M. van Dijk, J. Jaeschke, O. Wittler, Andreas Stegmaier, M. Schneider-Ramelow

引用次数: 1

Piezoelectric properties of roll-to-roll fabricated polylactic acid films 卷对卷制备聚乳酸薄膜的压电性能

2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC) Pub Date : 2020-09-15 DOI: 10.1109/ESTC48849.2020.9229788

S. Tuukkanen, J. Toriseva, A. Pammo, J. Virtanen, J. Lahti

引用次数: 1

Laser bonding of copper ribbons and clips on SiC power MOSFETs with sintered copper bond buffers 烧结铜键缓冲器在SiC功率mosfet上的铜带和铜夹激光键合

2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC) Pub Date : 2020-09-15 DOI: 10.1109/ESTC48849.2020.9229724

N. Pavliček, Fabian Mohn

{"title":"Laser bonding of copper ribbons and clips on SiC power MOSFETs with sintered copper bond buffers","authors":"N. Pavliček, Fabian Mohn","doi":"10.1109/ESTC48849.2020.9229724","DOIUrl":"https://doi.org/10.1109/ESTC48849.2020.9229724","url":null,"abstract":"The source (emitter) contact of MOSFETs (IGBTs) is one of the most sensitive joints of power semiconductor modules. Due to limitations with regards to current density and power cycling reliability, state-of-the-art aluminum wire bonding is replaced, for example, by copper wire or ribbon bonding. In this study, a novel laser micro welding technology has been implemented to connect the source contact of 1.2 kV SiC MOSFETs reinforced by silver-sintered copper bond buffer top plates. The feasibility of laser bonding of 0.3 mm thick copper ribbons or 0.15 mm thick copper clips has been investigated on bond buffer top plates of 0.1 mm or 0.15 mm thickness.The laser bonding process was optimized by optical inspection of the weld seam, shear strength measurements of the bonds, analysis of polished micrograph sections, and electrical characterization of the power MOSFETs. Shear strength values exceeding 200 MPa have been repeatedly achieved for all material combinations. Results of electrical characterization are promising, and optically impeccable welding seams strongly correlate with electrically functional semiconductor devices. Power cycling of encapsulated power modules is currently ongoing, and results will be presented.An outlook is given on future measures to further improve the laser bonding process, and we discuss how laser bonding compares to other advanced topside interconnection methods.","PeriodicalId":6785,"journal":{"name":"2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC)","volume":"82 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2020-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87014320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3