2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC)最新文献

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Cryptographic Key Derivation from an Anti-Tamper Solution 从一个防篡改解决方案推导加密密钥
2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC) Pub Date : 2020-09-15 DOI: 10.1109/ESTC48849.2020.9229844
D. Vasile, S. Chițu, P. Svasta
{"title":"Cryptographic Key Derivation from an Anti-Tamper Solution","authors":"D. Vasile, S. Chițu, P. Svasta","doi":"10.1109/ESTC48849.2020.9229844","DOIUrl":"https://doi.org/10.1109/ESTC48849.2020.9229844","url":null,"abstract":"The IoT concept keeps the interest of electronics designers for many years. The IoT devices are used in various application domains, such as: consumer, commercial, industrial, infrastructure and medical. They process and communicate data that, in most cases, are confidential or are not intended for the public. The security of the IoT devices has become a major concern for every user. This paper proposes a security system that protects the IoT devices from tampering with no backup power. It consists of an electronic circuit that has two roles: analyzes the physical integrity of the protected device and derivates a key to decrypt the firmware.","PeriodicalId":6785,"journal":{"name":"2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC)","volume":"64 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2020-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87952615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Acoustic methods for detection of specific failure modes in capacitive MEMS microphones 电容式MEMS麦克风特定失效模式的声学检测方法
2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC) Pub Date : 2020-09-15 DOI: 10.1109/ESTC48849.2020.9229745
Gergely Hantos, M. Desmulliez
{"title":"Acoustic methods for detection of specific failure modes in capacitive MEMS microphones","authors":"Gergely Hantos, M. Desmulliez","doi":"10.1109/ESTC48849.2020.9229745","DOIUrl":"https://doi.org/10.1109/ESTC48849.2020.9229745","url":null,"abstract":"Capacitive MEMS microphones are found today in the majority of mobile phones. Methods to detect failures easily and non-invasively during the manufacturing or usage of microphones, and to maintain microphones performance have become of critical importance to microphones and mobile phones manufacturers. This article provides four new methods, based solely on acoustic measurements to measure pull-in voltage and snapback voltage ranges, and to identify the states of electrostatic capture for single membrane capacitive MEMS microphones. 100% success rate in detecting membrane capture events is demonstrated for this type of device.","PeriodicalId":6785,"journal":{"name":"2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC)","volume":"2 1","pages":"1-8"},"PeriodicalIF":0.0,"publicationDate":"2020-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87767522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Influence of Temperature Cycling on Asymmetric Optical Bus Couplers 温度循环对非对称光总线耦合器的影响
2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC) Pub Date : 2020-09-15 DOI: 10.1109/ESTC48849.2020.9229684
L. Lorenz, L. Ott, K. Nieweglowski, K. Bock
{"title":"Influence of Temperature Cycling on Asymmetric Optical Bus Couplers","authors":"L. Lorenz, L. Ott, K. Nieweglowski, K. Bock","doi":"10.1109/ESTC48849.2020.9229684","DOIUrl":"https://doi.org/10.1109/ESTC48849.2020.9229684","url":null,"abstract":"A novel coupling approach with specific coupling ratios depending on the coupling direction (optical bus to electro-optical device and vice versa) is presented. According to that, an asymmetric optical bus coupler (AOBC) is obtained, where a high amount of light is coupled from a device/module into the optical bus, whereas the ratio in the opposite direction is significantly smaller to keep enough energy in the bus for later coupling. This is realized without any filters by a specific bending of the waveguides. Hence, an up to four times higher coupling ratio in the module-to-bus direction is achieved compared to the opposite direction at the same junction. In contrast, current coupling schemes have a 1:1 coupling, waveguides are interrupted or filters are used. In this paper, we investigate the influence of temperature on the AOBC. For that, we constructed a special measurement setup, which allows for a controlled temperature change only at the coupling point. With this setup, we investigated the influence of temperature (up to 80°C) on the bus coupling over 48 hours. The measurements revealed, that the coupling power rises with increasing temperature and vice versa. With an additional vision system, we observed the enlargement of the contact area of the waveguides (coupling area), because of thermal expansion, which leads to the change of the coupling power. Besides this variation, the coupling point is damaged at 20°C/80°C cycles because of the high mechanical load. However, at 20°C/60°C cycles, the AOBC is stable over the measuring period.","PeriodicalId":6785,"journal":{"name":"2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC)","volume":"37 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2020-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85359294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Dry-electrode based ECG monitoring device with electrodes reliability test capabilities 具有电极可靠性测试功能的干电极心电监护装置
2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC) Pub Date : 2020-09-15 DOI: 10.1109/ESTC48849.2020.9229866
Ştefan-Cristian Voica, A. Dragulinescu, A. Dragulinescu
{"title":"Dry-electrode based ECG monitoring device with electrodes reliability test capabilities","authors":"Ştefan-Cristian Voica, A. Dragulinescu, A. Dragulinescu","doi":"10.1109/ESTC48849.2020.9229866","DOIUrl":"https://doi.org/10.1109/ESTC48849.2020.9229866","url":null,"abstract":"In wearable and eHealth domains, many applications requiring reliable materials and devices are emerging. The health status and the patient quality of life can be improved with proper designed devices, especially when these devices have the ability of self-diagnose, that is, they have the in-built capacity to alert the user or the patient that some components are damaged or out of operation. This paper proposes a prototype of dry-electrode-based ECG monitoring device that verifies that the dry electrodes were accordingly coated by means of electrochemical methods and that their conductivity was not affected during the coating process. Subsequently, if the testing of the electrodes has a positive result (electrodes are reliable), the device performs the ECG signal acquisition and processing.","PeriodicalId":6785,"journal":{"name":"2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC)","volume":"51 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2020-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90268137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Cu-Cu Bonding with Cu Nanowire Arrays for Electronics Integration 电子集成用铜纳米线阵列的Cu-Cu键合
2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC) Pub Date : 2020-09-15 DOI: 10.1109/ESTC48849.2020.9229670
Hanqing Jiang, S. Robertson, Zhaoxia Zhou, Changqing Liu
{"title":"Cu-Cu Bonding with Cu Nanowire Arrays for Electronics Integration","authors":"Hanqing Jiang, S. Robertson, Zhaoxia Zhou, Changqing Liu","doi":"10.1109/ESTC48849.2020.9229670","DOIUrl":"https://doi.org/10.1109/ESTC48849.2020.9229670","url":null,"abstract":"Due to the demand of miniaturization and high reliability, heterogeneous integration of wide band gap semiconductors requires advanced interconnect materials that enable optimum designs of component and hierarchical architectural dispositions. Although traditional Cu-Cu thermocompression bonding is considered as a front-runner compared to solder-based bonding approaches, the high soldering temperature (300~400°C) and pressure may cause degradation of the performance of bonded devices. In this study, robust Cu-Cu interconnections have been achieved through the interdigitation and interfacial diffusion of spaced, vertically grown free-standing Cu nanowire arrays (Cu-NWAs). These Cu-NWAs were prepared through template assisted electrodeposition on Cu substrates, consisting of densely distributed nanowires with 150 nm diameter and 8 μm length. With application of pressure, compact joints with Cu-NWAs can be produced even under ambient condition.","PeriodicalId":6785,"journal":{"name":"2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC)","volume":"55 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2020-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88650986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Co-integration of TSV mid process and optical devices for Silicon photonics interposers TSV中间工艺与硅光子中间体光学器件的协整
2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC) Pub Date : 2020-09-15 DOI: 10.1109/ESTC48849.2020.9229858
P. Tissier, J. Charbonnier, R. Vélard, F. Ponthenier, A. Farcy, F. Boeuf, S. Bernabé, B. Charbonnier, J. Broquin
{"title":"Co-integration of TSV mid process and optical devices for Silicon photonics interposers","authors":"P. Tissier, J. Charbonnier, R. Vélard, F. Ponthenier, A. Farcy, F. Boeuf, S. Bernabé, B. Charbonnier, J. Broquin","doi":"10.1109/ESTC48849.2020.9229858","DOIUrl":"https://doi.org/10.1109/ESTC48849.2020.9229858","url":null,"abstract":"In the framework of High Performance Computing and Datacom, silicon photonics interposers propose an interesting approach, while providing new challenges. This paper demonstrates such an integration and focuses on TSV Mid integration impact on sensitive photonic structures such as ring modulators, focusing on two specific technological aspects: substrate thinning and TSV integration. It is shown that thinning down to 100 microns and integrating TSV do not impact photonic performances more than wafer level process variability. Finally, thanks to these results, 3D Si photonics design opportunities will be discussed.","PeriodicalId":6785,"journal":{"name":"2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC)","volume":"24 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2020-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88498634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Comparison of SAC and new Pb-free solder alloy for special application SAC与新型专用无铅钎料合金的比较
2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC) Pub Date : 2020-09-15 DOI: 10.1109/ESTC48849.2020.9229691
A. Arazna, M. Kościelski, A. Sitek, W. Stęplewski, K. Janeczek, K. Lipiec, Ireneusz Rafalik, J. Sitek
{"title":"Comparison of SAC and new Pb-free solder alloy for special application","authors":"A. Arazna, M. Kościelski, A. Sitek, W. Stęplewski, K. Janeczek, K. Lipiec, Ireneusz Rafalik, J. Sitek","doi":"10.1109/ESTC48849.2020.9229691","DOIUrl":"https://doi.org/10.1109/ESTC48849.2020.9229691","url":null,"abstract":"Solder alloy plays a crucial role in the production of electronics devices. Sn-based alloy containing other elements like Pb, Ag and Cu has been the mostly used solder material of electronic circuit in recent years. However, environmental and health concerns over lead toxicity has resulted in recent legislation to limit the use of lead-based solders. Assemblies that work in harsh environment, such as automotive, aerospace, and military have benefited from exemptions for long time. Now due to industry conversion from SnPb to lead free interest in novel solder materials can be observed. Nevertheless, most of these exemptions have expired, and the limited availability of SnPb compatible components have now forced most of these industries into using lead free solders and components. Additionally, the evolution and expansion of electronics into more harsh operating environments, forces the solder alloys to perform more critical functions. This encouraged researchers to discover new leadfree solders. Great amount of effort was dedicated by previous researchers in developing new environmental friendly lead-free solders, such as Sn-Ag- Cu (SAC). Another candidate elements to include in a low melting point lead-free solder include Bi, Au, Tl, Ga, Zn or In.In this paper, the comparison of SAC alloy and new Pb-free solder alloys containing elements such as Bi, Ni and Sb was reported. Their technological properties was compared based on the tests results such as slump test, wetting test as well as spread test. Theoretically, elements contained in the new Pb-free solder alloy offer some benefits. For example, presence of bismuth limits formation of intermetallic compounds between copper surface and tin based alloy. The obtained tests results can be used in the electronics industry for the production of printed circuit boards, in particular for the production of devices for special applications.","PeriodicalId":6785,"journal":{"name":"2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC)","volume":"43 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2020-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76791066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Application of in-situ non-invasive failure detection methods for wire bonds 原位非侵入式焊丝粘结故障检测方法的应用
2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC) Pub Date : 2020-09-15 DOI: 10.1109/ESTC48849.2020.9229726
B. Czerny, V. Chavan, C. Gasser, J. Rosc, G. Khatibi
{"title":"Application of in-situ non-invasive failure detection methods for wire bonds","authors":"B. Czerny, V. Chavan, C. Gasser, J. Rosc, G. Khatibi","doi":"10.1109/ESTC48849.2020.9229726","DOIUrl":"https://doi.org/10.1109/ESTC48849.2020.9229726","url":null,"abstract":"Two in-situ failure detection methods by measuring acoustic emissions and transducer responses are presented to investigate the wire bond degradation failure during a highly accelerated mechanical fatigue test. This BAMFIT fatigue test is used to induce cyclic shear stresses in the bond interface until wire bond lift-off, operating at 60 kHz. The task was to incorporate non-invasive failure detection to identify the degree of degradation prior to end of life as an extension to the BAMFIT method and a possible quality control method. The acoustic emission investigations uses a Fabry Perot interferometer to detect high frequency emissions in the vicinity of the wire bond and detecting changes in the first three harmonics to identify a bond degradation. The transducer response approach observes systematic changes in the vibration and the damping behavior of the coupled resonance system by using the transducer as a piezo sensor. The results have shown that defective bond interconnect can be identified as early as ~50% of end of life, using high power but very short vibration pulses, and at ~80% for low power and completely non-invasive pulses. The obtained responses from the presented methods were correlated to the degree of degradation of the bond wire interface, by completing BAMFIT tests until end of life, cross section analysis as well as non-destructive X-ray computer tomography.","PeriodicalId":6785,"journal":{"name":"2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC)","volume":"343 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2020-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75462513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reliability Modelling for Different Wire Bonding Technologies based on FEA and Nano-Indentation 基于有限元分析和纳米压痕的不同线键合技术可靠性建模
2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC) Pub Date : 2020-09-15 DOI: 10.1109/ESTC48849.2020.9229761
R. Dudek, Anu Mathew, J. Albrecht, C. Scherf, S. Rzepka, N. Subbiah, J. Wilde
{"title":"Reliability Modelling for Different Wire Bonding Technologies based on FEA and Nano-Indentation","authors":"R. Dudek, Anu Mathew, J. Albrecht, C. Scherf, S. Rzepka, N. Subbiah, J. Wilde","doi":"10.1109/ESTC48849.2020.9229761","DOIUrl":"https://doi.org/10.1109/ESTC48849.2020.9229761","url":null,"abstract":"Silver sintering technology has been introduced as a replacement for the traditional interconnect technology such as soldering on power modules. Solder fatigue and wire bond failures are two major factors that affects the lifetime of power modules. The silver sinter interconnect technology resolves the lifetime issues of conventional solder fatigue. The wire bond degradation is another factor, which limits the lifetime of the power modules. The researches are going on to reduce the curbs of wire bond degradation. The replacement of Aluminium wire bond by CucorAl or Cu-wire bond can be an approach to increase the lifetime of wire bonds in the power modules. In the project SINTER, some aspects of reliability modeling of silver sintered power stacks with different substrate and wire bonding technologies are addressed. In pressure sintered power stacks, the failure mechanism \"wire-bond lift-off\" is dominating as long as aluminum heavy wire bonds are used. Thermo-mechanical FEA analysis of different wire bond is conducted on PCB and DCB substrates with a passive thermal cyclic load from (TS -40°C/140°C). The major challenge was the extraction of the material characteristics of CucorAl wire bond. The characteristics of the CucorAl wire has been obtained by Nano indentation. Replacement by CucorAl wires can enhance the bonds lifetime without severe changes in metallization and bonding technology. Modeling of standard aluminum wire bonds reliability versus that of CucorAl wire bonds are the subjects of the paper.","PeriodicalId":6785,"journal":{"name":"2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC)","volume":"183 1","pages":"1-7"},"PeriodicalIF":0.0,"publicationDate":"2020-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74392119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Mechanical Testing of Conductive Adhesives 导电胶粘剂的力学试验
2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC) Pub Date : 2020-09-15 DOI: 10.1109/ESTC48849.2020.9229831
H. Kristiansen, Erik Kalland, S. Helland
{"title":"Mechanical Testing of Conductive Adhesives","authors":"H. Kristiansen, Erik Kalland, S. Helland","doi":"10.1109/ESTC48849.2020.9229831","DOIUrl":"https://doi.org/10.1109/ESTC48849.2020.9229831","url":null,"abstract":"The shear strength of epoxy and acrylic adhesives mixed with different type of conductive adhesives have been tested. The epoxy-based adhesives provide the highest shear strength. Replacing silver flakes with silver coated polymer spheres also provided significantly higher strength, unless extensive amounts of stearic acid was used on the spheres.","PeriodicalId":6785,"journal":{"name":"2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC)","volume":"67 12 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90252296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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