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2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)最新文献

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Planar Waveguide Amplifiers and Lasers 平面波导放大器和激光器
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2014-12-01 DOI: 10.1142/9789814630399_0011
N. Dutta
{"title":"Planar Waveguide Amplifiers and Lasers","authors":"N. Dutta","doi":"10.1142/9789814630399_0011","DOIUrl":"https://doi.org/10.1142/9789814630399_0011","url":null,"abstract":"","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88208117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Semiconductor Optical Amplifier 半导体光放大器
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2011-06-30 DOI: 10.1142/9789813236707_0007
仓本大, 池田昌夫, 幸田伦太郎, 大木智之, 渡边秀辉, 宫嶋孝夫, 横山弘之
{"title":"Semiconductor Optical Amplifier","authors":"仓本大, 池田昌夫, 幸田伦太郎, 大木智之, 渡边秀辉, 宫嶋孝夫, 横山弘之","doi":"10.1142/9789813236707_0007","DOIUrl":"https://doi.org/10.1142/9789813236707_0007","url":null,"abstract":"The present invention provides a semiconductor optical amplifier, comprising: a laminated structure, the laminated structure successively comprising a compound semiconductor composed of GaN and having a first conductivity type first compound semiconductor layer, having a light amplification region composed of GaN compound semiconductor, and a third compound semiconductor layer composed of GaN compound semiconductor having a second conductivity type and a second compound semiconductor layer; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound The semiconductor layer. Said laminated structure having a ridge stripe structure. When each of the width of the ridge stripe structure at the light output end face and the ridge stripe structure on the light incident end face and Wout respectively Win, is satisfied Wout> Win. From the light output end face, along an axis of the semiconductor optical amplifier provided carrier non-injection region in the inner region of the laminated structure. The present invention is for greater light output, and the laser output becomes stable.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"62 2 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2011-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80872805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of high-order surface etched gratings for longitudinal mode selection in DFB lasers 高阶表面蚀刻光栅用于DFB激光器纵向模式选择的分析
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2010-10-07 DOI: 10.1109/NUSOD.2010.5595671
K. Pimenov, C. Watson, Y. Logvin, V. Tolstikhin, Fang Wu
{"title":"Analysis of high-order surface etched gratings for longitudinal mode selection in DFB lasers","authors":"K. Pimenov, C. Watson, Y. Logvin, V. Tolstikhin, Fang Wu","doi":"10.1109/NUSOD.2010.5595671","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595671","url":null,"abstract":"A model to analyze longitudinal mode selection in high-order laterally coupled DFB lasers is developed and used to verify an ability to control the complex coupling resulting in a single-frequency lasing by manipulating the grating shape.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"49-50"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88909021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Pseudopotential study of electronic and optical properties of InAs semiconductor nanostructures InAs半导体纳米结构的电子和光学性质的赝势研究
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2010-10-07 DOI: 10.1109/NUSOD.2010.5595666
Theerapong Puangmali, M. Califano, P. Harrison
{"title":"Pseudopotential study of electronic and optical properties of InAs semiconductor nanostructures","authors":"Theerapong Puangmali, M. Califano, P. Harrison","doi":"10.1109/NUSOD.2010.5595666","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595666","url":null,"abstract":"We present an atomistic pseudopotential study of the electronic and optical properties of InAs quantum dots and nanorods as a function of increasing diameter and aspect ratio. As the aspect ratio increases, energy levels cross in both conduction and valence bands, reflecting their different dependence on confinement along a specific direction. Unlike in CdSe and InP quantum rods, however, the position of the crossover between highest occupied molecular orbitals with different symmetries is found to be size-dependent and the value of the aspect ratio at the crossing to increase with the rod diameter. The level crossings at the top of the valence band are crucial to explain the evolution with elongation of all optical properties in these systems. A common monotonic behaviour of band gap, Stokes shift, degree of linear polarization and radiative lifetime, is closely linked to the variation with aspect ratio of the electronic structure of the nanocrystal valence band edge.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"26 1","pages":"63-64"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90509223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of polarization charge in GaN-based blue laser diodes (LD) 氮化镓基蓝色激光二极管(LD)极化电荷的影响
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2010-10-07 DOI: 10.1109/NUSOD.2010.5595689
L. Cheng, Y. Sheng, C. Xia, Wei Lu, M. Lestrade, Zi-Qiang Li, Zhanming Li
{"title":"Effects of polarization charge in GaN-based blue laser diodes (LD)","authors":"L. Cheng, Y. Sheng, C. Xia, Wei Lu, M. Lestrade, Zi-Qiang Li, Zhanming Li","doi":"10.1109/NUSOD.2010.5595689","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595689","url":null,"abstract":"LASTIP software was applied to simulate a classical GaN-based blue laser diodes (LD) emitting at about 410nm. Considering effects of polarization charge (PC) in this LD, theoretical simulation showed accordant results with that in experiments. On the other hand, without regard to PC, threshold voltage and current are lowered, while laser characteristic temperature is enhanced, which indicates that PC acts as a negative role for laser performance.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"88 1","pages":"13-14"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75495698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of Geiger mode silicon carbide avalanche photodiode 盖革模式碳化硅雪崩光电二极管的仿真
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2010-10-07 DOI: 10.1109/NUSOD.2010.5595642
Qiugui Zhou, Han-din Liu, D. Mcintosh, Chong Hu, J. Campbell
{"title":"Simulation of Geiger mode silicon carbide avalanche photodiode","authors":"Qiugui Zhou, Han-din Liu, D. Mcintosh, Chong Hu, J. Campbell","doi":"10.1109/NUSOD.2010.5595642","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595642","url":null,"abstract":"The breakdown probability and timing jitter of silicon carbide single-photon avalanche diodes were simulated with a random path length Monte-Carlo model. The results are in good agreement with the measured device characteristics.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"49 1","pages":"111-112"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90508366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Semiconductor plasmonic nanolasers 半导体等离子体纳米激光器
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2010-10-07 DOI: 10.1109/NUSOD.2010.5595670
Cun-Zheng Ning, D. B. Li, K. Ding, H. Wang, R. B. Liu, M. Hill, R. Noetzel, Mk Meint Smit
{"title":"Semiconductor plasmonic nanolasers","authors":"Cun-Zheng Ning, D. B. Li, K. Ding, H. Wang, R. B. Liu, M. Hill, R. Noetzel, Mk Meint Smit","doi":"10.1109/NUSOD.2010.5595670","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595670","url":null,"abstract":"We present recent results on modeling, fabrication, and characterization of semiconductor nanolasers based on semiconductor-metal core-shell waveguides. In particular, results of lasers with a sub-diffraction-limit thickness will be presented under electrical injection.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"501 1","pages":"55-56"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80051007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Full-Band Monte Carlo study of gain, bandwidth and noise of GaN avalanche photodiodes GaN雪崩光电二极管增益、带宽和噪声的全频带蒙特卡罗研究
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2010-10-07 DOI: 10.1109/NUSOD.2010.5595684
M. Moresco, F. Bertazzi, E. Bellotti
{"title":"A Full-Band Monte Carlo study of gain, bandwidth and noise of GaN avalanche photodiodes","authors":"M. Moresco, F. Bertazzi, E. Bellotti","doi":"10.1109/NUSOD.2010.5595684","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595684","url":null,"abstract":"A growing number of system applications are increasingly demanding high speed, low noise, and high sensitivity UV detectors. GaN avalanche photodiodes (APDs) are prime candidates to become the device of choice in this area. This work presents a theoretical analysis of the performance of GaN APDs using Full Band Monte Carlo simulation. A study of the multiplication gain, noise and bandwidth is presented in this paper. The numerical results are in good agreement with experimental data available in literature.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"43 1","pages":"27-28"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85628150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Physics-based simulation of a core-multishell nanowire light emitting diode 核-多壳纳米线发光二极管的物理模拟
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2010-10-07 DOI: 10.1109/NUSOD.2010.5595652
F. Romer, M. Deppner, B. Witzigmann
{"title":"Physics-based simulation of a core-multishell nanowire light emitting diode","authors":"F. Romer, M. Deppner, B. Witzigmann","doi":"10.1109/NUSOD.2010.5595652","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595652","url":null,"abstract":"We report on the computational analysis of a triangular core-multishell nanowire light emitting diode with three joint InxGa1−xN active layers. The different crystal orientations of these layers lead to different polarization induced internal fields and transition energies. The simulation approach accounts for these effects by including the calculation of strained band edges and piezo potentials and provides a self-consistent model for the coupled 3D bulk and 2D quantized structure. The simulator is targeted to a comprehensive analysis of luminescence including the spatial variation of transition energies and carrier densities.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"117 1","pages":"91-92"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79753035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Simulations of photo-carrier decay on heterojunction with intrinsic thin layer (HIT) solar cells with n-type wafers n型晶圆本征薄层太阳能电池异质结光载流子衰减的模拟
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2010-10-07 DOI: 10.1109/NUSOD.2010.5595659
A. Kanevce, J. Li, R. Crandall, M. Page, E. Iwaniczko
{"title":"Simulations of photo-carrier decay on heterojunction with intrinsic thin layer (HIT) solar cells with n-type wafers","authors":"A. Kanevce, J. Li, R. Crandall, M. Page, E. Iwaniczko","doi":"10.1109/NUSOD.2010.5595659","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595659","url":null,"abstract":"This work presents simulations of photo-excited minority carriers decay in HIT cells. The photo-carrier decay is analyzed as a function of light pulse duration, c-Si material quality and external parameters such as voltage bias and temperature. The simulation results can help interpret capacitance transient as well as photovoltage decay measurements.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"78 1","pages":"73-74"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87174314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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