GaN雪崩光电二极管增益、带宽和噪声的全频带蒙特卡罗研究

2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2010-10-07 DOI:10.1109/NUSOD.2010.5595684

M. Moresco, F. Bertazzi, E. Bellotti

{"title":"GaN雪崩光电二极管增益、带宽和噪声的全频带蒙特卡罗研究","authors":"M. Moresco, F. Bertazzi, E. Bellotti","doi":"10.1109/NUSOD.2010.5595684","DOIUrl":null,"url":null,"abstract":"A growing number of system applications are increasingly demanding high speed, low noise, and high sensitivity UV detectors. GaN avalanche photodiodes (APDs) are prime candidates to become the device of choice in this area. This work presents a theoretical analysis of the performance of GaN APDs using Full Band Monte Carlo simulation. A study of the multiplication gain, noise and bandwidth is presented in this paper. The numerical results are in good agreement with experimental data available in literature.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"43 1","pages":"27-28"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A Full-Band Monte Carlo study of gain, bandwidth and noise of GaN avalanche photodiodes\",\"authors\":\"M. Moresco, F. Bertazzi, E. Bellotti\",\"doi\":\"10.1109/NUSOD.2010.5595684\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A growing number of system applications are increasingly demanding high speed, low noise, and high sensitivity UV detectors. GaN avalanche photodiodes (APDs) are prime candidates to become the device of choice in this area. This work presents a theoretical analysis of the performance of GaN APDs using Full Band Monte Carlo simulation. A study of the multiplication gain, noise and bandwidth is presented in this paper. The numerical results are in good agreement with experimental data available in literature.\",\"PeriodicalId\":6780,\"journal\":{\"name\":\"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"volume\":\"43 1\",\"pages\":\"27-28\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2010.5595684\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2010.5595684","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

越来越多的系统应用对高速、低噪声和高灵敏度紫外探测器的要求越来越高。氮化镓雪崩光电二极管(apd)是这一领域的首选器件。这项工作提出了一个理论分析的性能氮化镓apd使用全带蒙特卡罗模拟。本文对倍增增益、噪声和带宽进行了研究。数值计算结果与文献实验数据吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A Full-Band Monte Carlo study of gain, bandwidth and noise of GaN avalanche photodiodes

A growing number of system applications are increasingly demanding high speed, low noise, and high sensitivity UV detectors. GaN avalanche photodiodes (APDs) are prime candidates to become the device of choice in this area. This work presents a theoretical analysis of the performance of GaN APDs using Full Band Monte Carlo simulation. A study of the multiplication gain, noise and bandwidth is presented in this paper. The numerical results are in good agreement with experimental data available in literature.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

自引率

0.00%

发文量