Simulations of photo-carrier decay on heterojunction with intrinsic thin layer (HIT) solar cells with n-type wafers

Abstract

This work presents simulations of photo-excited minority carriers decay in HIT cells. The photo-carrier decay is analyzed as a function of light pulse duration, c-Si material quality and external parameters such as voltage bias and temperature. The simulation results can help interpret capacitance transient as well as photovoltage decay measurements.