发布求助
文献互助 智能选刊 最新文献

2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)最新文献

筛选
英文 中文
Numerical and Experimental Characterization of Chirped Quantum Dot-based Semiconductor Optical Amplifiers 啁啾量子点半导体光放大器的数值和实验表征
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541489
A. Forrest, M. Cataluna, M. Krakowski, G. Giannuzzi, P. Bardella
{"title":"Numerical and Experimental Characterization of Chirped Quantum Dot-based Semiconductor Optical Amplifiers","authors":"A. Forrest, M. Cataluna, M. Krakowski, G. Giannuzzi, P. Bardella","doi":"10.1109/NUSOD52207.2021.9541489","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541489","url":null,"abstract":"We present a model for the description of the dynamical behavior of Quantum Dot (QD) based Semiconductor Optical Amplifiers (SOAs) under injection of optical pulses. The model uses a Time Domain Traveling Wave (TDTW) approach to describe the optical field in the amplifier, and allows us to consider chirped QD materials by the inclusion of a set of rate equations modeling the occupation probability of the QD confined states in each active layer. The results of the numerical simulations are validated against experimental measurements of a two-contact chirped QD SOA with ground state emissions in the 1200 nm to 1300 nm range. When the single-pass configuration is compared to the double-pass setup, both the numerical simulations and the experimental results show that a clear improvement can be obtained with the latter configuration in terms of output power and signal amplification; for the majority of biasing conditions, the double-pass amplifier presents a gain approximately 3 dB greater than the single-pass without evident saturation of the gain and pulses broadening.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"105 1","pages":"17-18"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82532663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Current-Voltage Characteristics Simulations of Organic Solar Cells Using Discontinuous Galerkin Method 用不连续伽辽金法模拟有机太阳能电池的电流电压特性
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541418
N. Ćirović, A. Khalf, J. Gojanović, P. Matavulj, S. Živanović
{"title":"Current-Voltage Characteristics Simulations of Organic Solar Cells Using Discontinuous Galerkin Method","authors":"N. Ćirović, A. Khalf, J. Gojanović, P. Matavulj, S. Živanović","doi":"10.1109/NUSOD52207.2021.9541418","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541418","url":null,"abstract":"The steady state drift-diffusion model (DDM) of organic solar cells that considers the surface recombination processes for majority and minority carriers, as well as their thermionic emission on both electrodes, is presented in this paper. When the full Robin boundary conditions (BCs) and the popular finite difference method with Schaffeter-Gummel discretization (FDSG) were applied, significant instabilities were observed when surface recombination velocities (SRVs) for majority carriers on one or both electrodes were reduced. To analyze this problem and perceive the independent impacts of electron and hole contact processes, the model was simplified by assuming a constant electric field in the device and by solving the electron and hole continuity equations separately. The stability of numerical DDM solutions obtained by the FDSG and Discontinuous Galerkin (DG) methods for three different types of BCs (Dirichlet and two mixed BCs) was examined. The DG method showed a better stability when majority carriers SRVs were reduced. The current density versus voltage (J-V) characteristic calculated by the DDM with Dirichlet BCs using the DG method was compared to the measured ITO/PEDOT:PSS/P3HT:PCBM/Al solar cell J-V curve for the model validation.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"12 1","pages":"57-58"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88384174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Semiconductor Laser — II 半导体激光器- II
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2018-07-02 DOI: 10.1142/9789813236707_0004
{"title":"Semiconductor Laser — II","authors":"","doi":"10.1142/9789813236707_0004","DOIUrl":"https://doi.org/10.1142/9789813236707_0004","url":null,"abstract":"","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80412386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photodetectors 光电探测器
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2018-07-02 DOI: 10.1142/9789813236707_0006
Philippe Mangeot Ceadsmdapnia, Katsushi Arisaka Ucla, T. Patzak
{"title":"Photodetectors","authors":"Philippe Mangeot Ceadsmdapnia, Katsushi Arisaka Ucla, T. Patzak","doi":"10.1142/9789813236707_0006","DOIUrl":"https://doi.org/10.1142/9789813236707_0006","url":null,"abstract":"","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"19 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83348150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
BACK MATTER 回到问题
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2018-07-02 DOI: 10.1142/9789813236707_bmatter
{"title":"BACK MATTER","authors":"","doi":"10.1142/9789813236707_bmatter","DOIUrl":"https://doi.org/10.1142/9789813236707_bmatter","url":null,"abstract":"","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"157 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76745992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical Fiber and Fiber-Based Devices 光纤和光纤设备
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2018-07-02 DOI: 10.1142/9789813236707_0009
{"title":"Optical Fiber and Fiber-Based Devices","authors":"","doi":"10.1142/9789813236707_0009","DOIUrl":"https://doi.org/10.1142/9789813236707_0009","url":null,"abstract":"","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"17 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73077189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modulators 调节器
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2018-07-02 DOI: 10.1142/9789813236707_0005
Nicolas, F. Jaeger, Farpoosh Rahmatian, H. Kato, R. James, E. Berolo
{"title":"Modulators","authors":"Nicolas, F. Jaeger, Farpoosh Rahmatian, H. Kato, R. James, E. Berolo","doi":"10.1142/9789813236707_0005","DOIUrl":"https://doi.org/10.1142/9789813236707_0005","url":null,"abstract":"","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"14 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72588841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
FRONT MATTER 前页
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2018-07-02 DOI: 10.1142/9789813236707_fmatter
{"title":"FRONT MATTER","authors":"","doi":"10.1142/9789813236707_fmatter","DOIUrl":"https://doi.org/10.1142/9789813236707_fmatter","url":null,"abstract":"","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"43 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81554652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Light Emitting Diode (LED) and Materials 发光二极管(LED)和材料
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2018-07-02 DOI: 10.1142/9789813236707_0002
{"title":"Light Emitting Diode (LED) and Materials","authors":"","doi":"10.1142/9789813236707_0002","DOIUrl":"https://doi.org/10.1142/9789813236707_0002","url":null,"abstract":"","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"2 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86165945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analytic approximations for solar cell open circuit voltage, short circuit current and fill factor 太阳能电池开路电压、短路电流和填充系数的解析近似
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2016-07-11 DOI: 10.1109/NUSOD.2016.7547095
M. Maur, A. Carlo
{"title":"Analytic approximations for solar cell open circuit voltage, short circuit current and fill factor","authors":"M. Maur, A. Carlo","doi":"10.1109/NUSOD.2016.7547095","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547095","url":null,"abstract":"For a detailed understanding of solar cell operation and optimization it is necessary to know how the main performance parameters (open circuit voltage, short circuit current and fill factor) depend on material and structural parameters. In this work, we give analytic formulas for the case of solar cells consisting of a single layer absorber, derived from the drift-diffusion model under some simplifying assumptions. We provide insight into the dependency of these parameters on mobility, light intensity, contact workfunctions and recombination coefficients, and we derive simple formulas for limiting cases.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"144 1","pages":"183-184"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77966126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信