发布求助
文献互助 智能选刊 最新文献

2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)最新文献

筛选
英文 中文
Engineering the Active Region to Enhance the IQE by ~8% in AlGaN/GaN based UV-C LED 在AlGaN/GaN基UV-C LED中，设计有源区可使IQE提高约8%
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541462
Jayant Acharya, Sugandham Venkateshh, K. Ghosh
{"title":"Engineering the Active Region to Enhance the IQE by ~8% in AlGaN/GaN based UV-C LED","authors":"Jayant Acharya, Sugandham Venkateshh, K. Ghosh","doi":"10.1109/NUSOD52207.2021.9541462","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541462","url":null,"abstract":"To increase the internal quantum efficiency (IQE) of AlGaN/GaN based multi quantum-well (MQW) UV-C LED, the aluminium composition of barriers and wells in the active region has been engineered. Increase in electron-hole overlap and hence the radiative recombination rate in the final engineered structure has enabled to enhance the IQE by 8%.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"38 1","pages":"69-70"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78680905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modeling Material Susceptibility in Silicon for Four-Wave Mixing Based Nonlinear Optics 基于四波混频非线性光学的硅材料磁化率建模
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541526
U. Höfler, T. Kernetzky, N. Hanik
{"title":"Modeling Material Susceptibility in Silicon for Four-Wave Mixing Based Nonlinear Optics","authors":"U. Höfler, T. Kernetzky, N. Hanik","doi":"10.1109/NUSOD52207.2021.9541526","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541526","url":null,"abstract":"In We model the third-order material susceptibility $overleftrightarrow chi $[3] in silicon waveguides for integrated optics. Analysis of four- wave mixing in these waveguides requires an in-depth study of material nonlinearity - in contrast to modeling light propagation in fibers with the optical nonlinear Schrödinger equation. We include electronic and atomic lattice (Raman) responses of the material and present a relatively easy-to-use representation of the material susceptibility.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"40 1","pages":"121-122"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73115782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design and Analysis of Slow Light Device based on Double Quantum Dots Tunneling Induced Transparency 基于双量子点隧穿诱导透明的慢光器件设计与分析
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541445
Hossein Mardani, H. Kaatuzian, Bahram Choupanzadeh
{"title":"Design and Analysis of Slow Light Device based on Double Quantum Dots Tunneling Induced Transparency","authors":"Hossein Mardani, H. Kaatuzian, Bahram Choupanzadeh","doi":"10.1109/NUSOD52207.2021.9541445","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541445","url":null,"abstract":"Slow light Transparency window can be achieved with the help of Electromagnetically Induced Transparency (EIT) method and Tunneling Induced Transparency (TIT) method accompanied by observing tunneling effect between InAs quantum dot structure with energy gap of 0.35ev and a thin layer of GaAs potential barrier with energy gap of 1.42ev. By investigating different parameters such as group velocity and Slow Down Factor (SDF) coefficient at different detuning frequencies, we have obtained an improved design in tunneling and identifying some better conditions. Under TIT condition, the SDF parameter has improved to the amount of 3.2 × 106.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"9 1","pages":"11-12"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74042193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Flexible and Highly Scalable LiDAR for an FMCW LiDAR PIC based on Grating Couplers 基于光栅耦合器的FMCW激光雷达PIC的灵活和高度可扩展的激光雷达
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541491
Vahram Voskerchyan, Yu Tian, F. Soares, F. Diaz-Otero
{"title":"Flexible and Highly Scalable LiDAR for an FMCW LiDAR PIC based on Grating Couplers","authors":"Vahram Voskerchyan, Yu Tian, F. Soares, F. Diaz-Otero","doi":"10.1109/NUSOD52207.2021.9541491","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541491","url":null,"abstract":"In this paper three types of Silicon Photonics OPA architectures are proposed and investigated. Edge-fire optical phased array, that simplifies the design of the OPA. Second architecture is OPA with grating coupler antennas. Maximum steering angle for edge-fire OPA is ±44°, FWHM is 0.10986°. For GC OPA steering angle is ±20° and FWHM=1.003116°. Third architecture is the Slanted Grating Coupler with a FOV of 100°.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"93 1","pages":"119-120"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74543883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical Simulation of Optical Through-Silicon Waveguide for 3D Photonic Interconnections 三维光子互连用硅通光波导的数值模拟
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541464
Francesco Villasmunta, P. Steglich, S. Schrader, H. Schenk, A. Mai
{"title":"Numerical Simulation of Optical Through-Silicon Waveguide for 3D Photonic Interconnections","authors":"Francesco Villasmunta, P. Steglich, S. Schrader, H. Schenk, A. Mai","doi":"10.1109/NUSOD52207.2021.9541464","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541464","url":null,"abstract":"Optical interconnections are a promising step for-ward to overcome the intrinsic limitations of electrical inter-connections in integrated circuits. In this work, we present a finite element method (FEM) simulation study of a dielectric waveguide etched through the full thickness of a silicon substrate. In particular, it is investigated the effect of the bridge-to-core size ratio on the first two supported modes. Then, the influence of the waveguide sidewalls tapering angle on the three-dimensional beam propagation is studied. Such optical through-silicon waveguide (OTSW), if nonadiabatically tapered can provide effective mode size conversion and favour the coupling of external light sources to photonic integrated circuits.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"30 1","pages":"115-116"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89103281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Efficient multi-band k•p calculations of superlattice electronic and optical properties using plane waves 利用平面波计算超晶格电子和光学性质的有效多波段k•p
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541479
Cónal Murphy, E. O’Reilly, C. Broderick
{"title":"Efficient multi-band k•p calculations of superlattice electronic and optical properties using plane waves","authors":"Cónal Murphy, E. O’Reilly, C. Broderick","doi":"10.1109/NUSOD52207.2021.9541479","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541479","url":null,"abstract":"Solving the multi-band k•p Schrödinger equation for a quantum-confined heterostructure using a reciprocal space plane wave approach presents several advantages compared to conventional real space approaches such as the finite difference or element methods. In addition to allowing analytical derivation of the heterostructure Hamiltonian, a desired level of accuracy in the computed eigenstates can generally be achieved using significantly reduced basis set size compared to equivalent real space calculations. This reduces the size of the Hamiltonian matrix that must be diagonalised to compute the electronic structure, thereby accelerating numerical calculations. Here, we demonstrate how the built-in periodicity of plane waves also allows to efficiently compute – for an arbitrary multi-band k•p Hamiltonian – superlattice (SL) miniband structure, using a calculational supercell consisting only of a single SL period. As an example we analyse the origin of the high radiative recombination rate in \"broken-gap\" InAs/GaSb SLs, of interest for applications in mid-infrared inter-band cascade light-emitting diodes.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"546 1","pages":"137-138"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86970749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optimization of Two-Dimensional Photonic Crystals with Artificial Bee Colony Algorithm 基于人工蜂群算法的二维光子晶体优化
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541512
Mailson G. Da Silva, G. N. Malheiros-Silveira
{"title":"Optimization of Two-Dimensional Photonic Crystals with Artificial Bee Colony Algorithm","authors":"Mailson G. Da Silva, G. N. Malheiros-Silveira","doi":"10.1109/NUSOD52207.2021.9541512","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541512","url":null,"abstract":"We applied the Artificial Bee Colony algorithm for the complete band gap maximization of a two-dimensional photonic crystal. The band diagram and band gap calculation were carried out by the software MIT Photonic Bands, and these results were used in the algorithm’s fitness function. The optimum structure was compared to the literature which used genetic algorithm, and it was observed a raise in the complete band gap of the photonic crystal.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"46 1","pages":"147-148"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89654303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaN-based bipolar cascade laser exceeding 100% differential quantum efficiency 超过100%差分量子效率的氮化镓双极级联激光器
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541524
J. Piprek, M. Siekacz, G. Muzioł, C. Skierbiszewski
{"title":"GaN-based bipolar cascade laser exceeding 100% differential quantum efficiency","authors":"J. Piprek, M. Siekacz, G. Muzioł, C. Skierbiszewski","doi":"10.1109/NUSOD52207.2021.9541524","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541524","url":null,"abstract":"Worldwide research efforts have been focusing on quantum efficiency enhancements of GaN-based light emitters. A promising approach is the separation of multiple active regions by tunnel junctions, enabling electron-hole pairs to generate more than one photon. Utilizing advanced numerical device simulation, we here analyze internal physics and performance limitations of such InGaN/GaN bipolar cascade laser which recently demonstrated superior slope efficiency.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"18 3 1","pages":"75-76"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76806901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tight binding simulations of tetragonal MAPbI3 domains within orthorhombic phase 正交相中四边形MAPbI3结构域的紧密结合模拟
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541453
A. D. Vito, A. Pecchia, M. A. der Maur, A. Di Carlo
{"title":"Tight binding simulations of tetragonal MAPbI3 domains within orthorhombic phase","authors":"A. D. Vito, A. Pecchia, M. A. der Maur, A. Di Carlo","doi":"10.1109/NUSOD52207.2021.9541453","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541453","url":null,"abstract":"Very recent photoluminescence studies, investigating the tetragonal-to-orthorhombic phase transition of MAPbI3, demonstrated the presence of residual tetragonal phase far below the transition temperature, yielding spectral signatures from quantum confined tetragonal domains. We present a theoretical model of the coexistence of tetragonal and orthorhombic MAPbI3, based on tight binding simulations. The tight binding parameters are derived by particle swarm optimization and the band-offset between the two crystals is obtained by first-principles calculations. The impact of the tetragonal domain dimension on the optical properties of MAPbI3 is discussed.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"54 1","pages":"3-4"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89955713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Near Infra-red Photosensor using Optically Gated D-MOS Vertical TFET 利用光门控D-MOS垂直场效应晶体管的近红外光敏传感器
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541496
V. Wangkheirakpam, B. Bhowmick, P. Pukhrambam
{"title":"Near Infra-red Photosensor using Optically Gated D-MOS Vertical TFET","authors":"V. Wangkheirakpam, B. Bhowmick, P. Pukhrambam","doi":"10.1109/NUSOD52207.2021.9541496","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541496","url":null,"abstract":"This article reports a highly sensitive and low power photosensor using dual MOSCAP Vertical TFET for near infrared light detection in the wavelength range 0.7µm to 1µm. The optical voltage (VOP) developed because of the photogeneration occurring within the gate region enhances the gate control over the channel and produces higher drain current. The sensitivity is calculated by measuring the alteration of drain current with wavelength. Peak sensitivity of the order of 105 is obtained at VGS=0.5V and provides a maximum responsivity of 1.6x103 A/W at VGS=1.5V for λ= 0.7μm. This modified TFET based hybrid photosensor can be a new generation of highly sensitive photosensor.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"101 1","pages":"47-48"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76405417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信