基于双量子点隧穿诱导透明的慢光器件设计与分析

2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI:10.1109/NUSOD52207.2021.9541445

Hossein Mardani, H. Kaatuzian, Bahram Choupanzadeh

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引用次数: 1

摘要

通过观察能隙为0.35ev的InAs量子点结构与能隙为1.42ev的GaAs势垒薄层之间的隧穿效应，利用电磁感应透明(EIT)法和隧穿诱导透明(TIT)法实现了慢光透明窗口。通过对不同失谐频率下群速和慢化系数等参数的研究，得到了隧道掘进的改进设计，并确定了一些较好的条件。在TIT条件下，SDF参数提高到3.2 × 106。

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Design and Analysis of Slow Light Device based on Double Quantum Dots Tunneling Induced Transparency

Slow light Transparency window can be achieved with the help of Electromagnetically Induced Transparency (EIT) method and Tunneling Induced Transparency (TIT) method accompanied by observing tunneling effect between InAs quantum dot structure with energy gap of 0.35ev and a thin layer of GaAs potential barrier with energy gap of 1.42ev. By investigating different parameters such as group velocity and Slow Down Factor (SDF) coefficient at different detuning frequencies, we have obtained an improved design in tunneling and identifying some better conditions. Under TIT condition, the SDF parameter has improved to the amount of 3.2 × 106.

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2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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