在AlGaN/GaN基UV-C LED中，设计有源区可使IQE提高约8%

2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI:10.1109/NUSOD52207.2021.9541462

Jayant Acharya, Sugandham Venkateshh, K. Ghosh

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引用次数: 1

摘要

为了提高基于AlGaN/GaN的多量子阱(MQW) UV-C LED的内量子效率(IQE)，设计了活性区势垒和阱的铝成分。电子-空穴重叠的增加和最终工程结构的辐射复合率的提高使IQE提高了8%。

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Engineering the Active Region to Enhance the IQE by ~8% in AlGaN/GaN based UV-C LED

To increase the internal quantum efficiency (IQE) of AlGaN/GaN based multi quantum-well (MQW) UV-C LED, the aluminium composition of barriers and wells in the active region has been engineered. Increase in electron-hole overlap and hence the radiative recombination rate in the final engineered structure has enabled to enhance the IQE by 8%.

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来源期刊

2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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