基于四波混频非线性光学的硅材料磁化率建模

U. Höfler, T. Kernetzky, N. Hanik
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引用次数: 2

摘要

在本文中,我们模拟了集成光学硅波导中的三阶材料磁化率[3]。分析这些波导中的四波混频需要对材料非线性进行深入研究,而不是用光学非线性Schrödinger方程来模拟光纤中的光传播。我们包括材料的电子和原子晶格(拉曼)响应,并提出了一个相对容易使用的材料磁化率表示。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modeling Material Susceptibility in Silicon for Four-Wave Mixing Based Nonlinear Optics
In We model the third-order material susceptibility $\overleftrightarrow \chi $[3] in silicon waveguides for integrated optics. Analysis of four- wave mixing in these waveguides requires an in-depth study of material nonlinearity - in contrast to modeling light propagation in fibers with the optical nonlinear Schrödinger equation. We include electronic and atomic lattice (Raman) responses of the material and present a relatively easy-to-use representation of the material susceptibility.
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