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盖革模式碳化硅雪崩光电二极管的仿真

2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2010-10-07 DOI:10.1109/NUSOD.2010.5595642
Qiugui Zhou, Han-din Liu, D. Mcintosh, Chong Hu, J. Campbell
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引用次数: 1

摘要

采用随机路径长度蒙特卡罗模型模拟了碳化硅单光子雪崩二极管的击穿概率和时序抖动。结果与实测器件特性吻合较好。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Simulation of Geiger mode silicon carbide avalanche photodiode
The breakdown probability and timing jitter of silicon carbide single-photon avalanche diodes were simulated with a random path length Monte-Carlo model. The results are in good agreement with the measured device characteristics.
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来源期刊
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
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