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Rigorous simulation of photon recycling effects in perovskite solar cells and LEDs 钙钛矿太阳能电池和led中光子回收效应的严格模拟
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541505
U. Aeberhard, Simon Zeder, B. Ruhstaller
{"title":"Rigorous simulation of photon recycling effects in perovskite solar cells and LEDs","authors":"U. Aeberhard, Simon Zeder, B. Ruhstaller","doi":"10.1109/NUSOD52207.2021.9541505","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541505","url":null,"abstract":"Secondary photogeneration due to reabsorption of internally emitted photons in metal halide perovskites is assessed using a novel dipole emission model that is compatible with detailed balance rates. The model considers the non-uniform local photon density of states of thin film absorbers/emitters consistently in internal and external emission and provides insight into the impact of photon confinement on the effectiveness of photon recycling in the wave optics regime. New and general expressions for local radiative recombination and generation rates in terms of the local values of refractive index, extinction coefficient, density of states, and quasi-Fermi level splitting allow for a seamless integration of photon recycling into full opto-electronic device simulation frameworks.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"28 1","pages":"63-64"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87278834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Luminescence Decay Kinetics of Electron-Hole Plasma in II-VI Epitaxial Layers and Micropowders 电子-空穴等离子体在II-VI外延层和微粉末中的发光衰减动力学
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541458
B. Urmanov, M. S. Leonenya, G. P. Yablonskii
{"title":"Luminescence Decay Kinetics of Electron-Hole Plasma in II-VI Epitaxial Layers and Micropowders","authors":"B. Urmanov, M. S. Leonenya, G. P. Yablonskii","doi":"10.1109/NUSOD52207.2021.9541458","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541458","url":null,"abstract":"The luminescence decay kinetics of epitaxial layers of ZnSe and micropowders of ZnSe and CdS were measured at room temperature and at high levels of optical excitation. Comparison of the experimental results with the theoretically calculated decay kinetics showed good agreement for the initial moment of time at high concentrations of nonequilibrium charge carriers.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"29 1","pages":"29-30"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86693329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multimode Dynamics and Frequency Comb Generation in Quantum Cascade Lasers 量子级联激光器中的多模动力学和频率梳的产生
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541456
A. Belyanin, Yongrui Wang
{"title":"Multimode Dynamics and Frequency Comb Generation in Quantum Cascade Lasers","authors":"A. Belyanin, Yongrui Wang","doi":"10.1109/NUSOD52207.2021.9541456","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541456","url":null,"abstract":"In this talk I will discuss how resonant light-matter interaction in the gain medium of quantum cascade lasers gives rise to a rich nonlinear multimode dynamics and a variety of phase-locked multimode regimes, most notably optical frequency combs with separation between the comb lines changing from one to many dozen round-trip frequencies. I will review recent progress in understanding why frequency comb formation seems to be so ubiquitous in QCLs.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"73-74"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73109890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Connecting atomistic and continuum models for (In,Ga)N quantum wells: From tight-binding energy landscapes to electronic structure and carrier transport 连接(In,Ga)N量子阱的原子和连续体模型:从紧密结合能景观到电子结构和载流子输运
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541461
S. Schulz, M. O’Donovan, D. Chaudhuri, S. Patra, P. Farrell, O. Marquardt, T. Streckenbach, T. Koprucki
{"title":"Connecting atomistic and continuum models for (In,Ga)N quantum wells: From tight-binding energy landscapes to electronic structure and carrier transport","authors":"S. Schulz, M. O’Donovan, D. Chaudhuri, S. Patra, P. Farrell, O. Marquardt, T. Streckenbach, T. Koprucki","doi":"10.1109/NUSOD52207.2021.9541461","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541461","url":null,"abstract":"We present a multi-scale framework for calculating electronic and transport properties of nitride-based devices. Here, an atomistic tight-binding model is connected with continuum-based electronic structure and transport models. In a first step, the electronic structure of (In,Ga)N quantum wells is analyzed and compared between atomistic and continuum-based approaches, showing that even though the two models operate on the same energy landscape, the obtained results differ noticeably; we briefly discuss approaches to improve the agreement between the two methods. Equipped with this information, uni-polar carrier transport is investigated. Our calculations reveal that both random alloy fluctuations and quantum corrections significantly impact the transport, consistent with previous literature results.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"31 1","pages":"135-136"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81937452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Evaluation of material profiles for III-V nanowire photodetectors III-V纳米线光电探测器材料特性的评价
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541533
C. Martínez-Oliver, K. Moselund, V. Georgiev
{"title":"Evaluation of material profiles for III-V nanowire photodetectors","authors":"C. Martínez-Oliver, K. Moselund, V. Georgiev","doi":"10.1109/NUSOD52207.2021.9541533","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541533","url":null,"abstract":"In this paper we report the simulation-based design of experiment (DoE) study for three different types of III-V based pin photodetectors operating at various wavelengths. Our DoE work shows that the optimal configuration for each device is strongly determined by the wavelength at which we are aiming to operate the photodetector and that a trade-off exists between low dark current and high photocurrent. Heterostructure devices provide the optimum performance in particular for longer wavelengths.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"115 1","pages":"39-40"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79400711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Numerical simulation on the effect of the working temperature on the response sensitivity for GaAs-based blocked impurity band (BIB) terahertz detectors 工作温度对gaas基阻塞杂质带(BIB)太赫兹探测器响应灵敏度影响的数值模拟
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541473
Xiaodong Wang, Weiyi Ma, Bingbing Wang, Chuansheng Zhang, Yulu Chen, Haoxing Zhang
{"title":"Numerical simulation on the effect of the working temperature on the response sensitivity for GaAs-based blocked impurity band (BIB) terahertz detectors","authors":"Xiaodong Wang, Weiyi Ma, Bingbing Wang, Chuansheng Zhang, Yulu Chen, Haoxing Zhang","doi":"10.1109/NUSOD52207.2021.9541473","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541473","url":null,"abstract":"working temperature is a critical parameter to evaluate the performance of Gallium Arsenide (GaAs) blocked-impurity-band (BIB) terahertz detector. An optimal device temperature can ensure the best response sensitivity. Therefore, we analyze the effect of device temperature on the response sensitivity characteristics of GaAs-based BIB detector by numerical simulation. The simulated result shows that the optimal device temperature is nearly 6K.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"83 1","pages":"45-46"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80406569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A multiscale approach for BTJ-VCSEL electro-optical analysis BTJ-VCSEL电光分析的多尺度方法
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541423
Alberto Gullino, Simone Pecora, A. Tibaldi, F. Bertazzi, M. Goano, P. Debernardi
{"title":"A multiscale approach for BTJ-VCSEL electro-optical analysis","authors":"Alberto Gullino, Simone Pecora, A. Tibaldi, F. Bertazzi, M. Goano, P. Debernardi","doi":"10.1109/NUSOD52207.2021.9541423","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541423","url":null,"abstract":"This paper presents a theoretical comparison of the electro-optical characteristics of 850nm GaAs/AlGaAs pin-and BTJ-based VCSELs. The calculations are based on a drift-diffusion model coupled with a NEGF formalism, able to model accurately the tunneling across the TJ. The resulting LIV characteristics demonstrate promising improvements, at both 25 and 80°C, enabled by TJ confinement scheme.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"99 1","pages":"79-80"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80996677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The absorption enhancement effect of metal gratings integrated Silicon-based Blocked-Impurity-Band (BIB) terahertz detectors 金属光栅集成硅基阻塞杂质带(BIB)太赫兹探测器的吸收增强效应
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541474
Yulu Chen, Wulin Tong, Bingbing Wang, Lin Wang, Huiyuan Cui, Xiaodong Wang
{"title":"The absorption enhancement effect of metal gratings integrated Silicon-based Blocked-Impurity-Band (BIB) terahertz detectors","authors":"Yulu Chen, Wulin Tong, Bingbing Wang, Lin Wang, Huiyuan Cui, Xiaodong Wang","doi":"10.1109/NUSOD52207.2021.9541474","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541474","url":null,"abstract":"High-sensitivity Terahertz (THz) detection technology is widely researched for its potential applications in astronomical observation, human security check, weak signal biomacromolecule detection, etc. In this work, a novel THz detector based on metal gratings/Si-BIB hybrid structure is theoretically simulated and successfully fabricated. From FDTD simulation results, the optical field is localized in the absorbing-layer region due to the waveguide resonance effect of metal gratings with 7μm period, 5μm depth and 2/7 duty ratio. Then, the experimental results show that its spectral response is 223% higher than that of the device without metal gratings at the peak wavelength of 17μm. Our work successfully proposed a practical hybrid structure device for the biomacromolecule detection application as well as the weak signal detection in other THz applications.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"43 1","pages":"43-44"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89127222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical Prediction of Propagation Characteristics for Integrated Optical Couplers 集成光耦合器传输特性的数值预测
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541523
Daniel Uebach, Jan-Philipp Roth, Thomas Kühler, E. Griese
{"title":"Numerical Prediction of Propagation Characteristics for Integrated Optical Couplers","authors":"Daniel Uebach, Jan-Philipp Roth, Thomas Kühler, E. Griese","doi":"10.1109/NUSOD52207.2021.9541523","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541523","url":null,"abstract":"The field-assisted ion-exchange process for manufacturing integrated optical couplers is multivariate. For this reason, a precise prediction of the optical propagation characteristics of manufactured devices is needed. Two numerical calculation methods are compared with measured results for an integrated coupler to assess its applicability for a precise prediction.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"506 Pt A 1","pages":"145-146"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83493419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Marked efficiency enhancement of 222 nm AlGaN-based deep-UV LEDs for disinfection of SARS-2 (Covid-19) 222 nm algan基深紫外led对SARS-2 (Covid-19)的消毒效果显著增强
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541484
Tariq Jamil, Muhammad Usman, Habibullah Jamal, Sibghatullah I. Khan
{"title":"Marked efficiency enhancement of 222 nm AlGaN-based deep-UV LEDs for disinfection of SARS-2 (Covid-19)","authors":"Tariq Jamil, Muhammad Usman, Habibullah Jamal, Sibghatullah I. Khan","doi":"10.1109/NUSOD52207.2021.9541484","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541484","url":null,"abstract":"The AlGaN-based deep ultraviolet lightemitting diodes (DUV LEDs) for the disinfection of SARS-2 (Covid-19) are proposed in this study. The optoelectronic characteristics of DUV LEDs are numerically analyzed. The results show that the internal quantum efficiency (IQE) and radiative recombination rate are excellently improved in the proposed LED. This significant enhancement is due to the optimal recombination of electron-hole pairs in the active region. This is attributed to the increase of potential barrier height for electron, which suppress the electron leakage effectively. Moreover, due to the decrease of lattice mismatch between the last quantum barrier (LQB) and EBL ease the holes transportation to the active region. Therefore, based on these results, we highly believe that this study provides a novel approach for highly efficient DUV LEDs (222 nm) for the disinfection of severe SARS-2 (Covid-19) infection.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"30 1","pages":"67-68"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87242120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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