BTJ-VCSEL电光分析的多尺度方法

2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI:10.1109/NUSOD52207.2021.9541423

Alberto Gullino, Simone Pecora, A. Tibaldi, F. Bertazzi, M. Goano, P. Debernardi

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引用次数: 0

摘要

本文从理论上比较了850nm GaAs/AlGaAs引脚和btj基vcsel的电光特性。计算是基于一个漂移-扩散模型与一个NEGF形式相结合，能够准确地模拟穿越TJ的隧道掘进。结果表明，在25°C和80°C下，通过TJ约束方案，LIV特性得到了有希望的改善。

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A multiscale approach for BTJ-VCSEL electro-optical analysis

This paper presents a theoretical comparison of the electro-optical characteristics of 850nm GaAs/AlGaAs pin-and BTJ-based VCSELs. The calculations are based on a drift-diffusion model coupled with a NEGF formalism, able to model accurately the tunneling across the TJ. The resulting LIV characteristics demonstrate promising improvements, at both 25 and 80°C, enabled by TJ confinement scheme.

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2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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