III-V纳米线光电探测器材料特性的评价

2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI:10.1109/NUSOD52207.2021.9541533

C. Martínez-Oliver, K. Moselund, V. Georgiev

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引用次数: 1

摘要

在本文中，我们报告了基于模拟的实验设计(DoE)研究三种不同类型的工作在不同波长的III-V型引脚光电探测器。我们的DoE工作表明，每个器件的最佳配置在很大程度上取决于我们希望操作光电探测器的波长，并且在低暗电流和高光电流之间存在权衡。异质结构器件提供了最佳的性能，特别是在较长的波长。

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Evaluation of material profiles for III-V nanowire photodetectors

In this paper we report the simulation-based design of experiment (DoE) study for three different types of III-V based pin photodetectors operating at various wavelengths. Our DoE work shows that the optimal configuration for each device is strongly determined by the wavelength at which we are aiming to operate the photodetector and that a trade-off exists between low dark current and high photocurrent. Heterostructure devices provide the optimum performance in particular for longer wavelengths.

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2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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