工作温度对gaas基阻塞杂质带(BIB)太赫兹探测器响应灵敏度影响的数值模拟

2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI:10.1109/NUSOD52207.2021.9541473

Xiaodong Wang, Weiyi Ma, Bingbing Wang, Chuansheng Zhang, Yulu Chen, Haoxing Zhang

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引用次数: 0

摘要

工作温度是评价砷化镓(GaAs)阻塞杂质带(BIB)太赫兹探测器性能的关键参数。最佳的器件温度可以保证最佳的响应灵敏度。因此，我们通过数值模拟分析了器件温度对gaas基BIB探测器响应灵敏度特性的影响。仿真结果表明，器件的最佳温度接近6K。

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Numerical simulation on the effect of the working temperature on the response sensitivity for GaAs-based blocked impurity band (BIB) terahertz detectors

working temperature is a critical parameter to evaluate the performance of Gallium Arsenide (GaAs) blocked-impurity-band (BIB) terahertz detector. An optimal device temperature can ensure the best response sensitivity. Therefore, we analyze the effect of device temperature on the response sensitivity characteristics of GaAs-based BIB detector by numerical simulation. The simulated result shows that the optimal device temperature is nearly 6K.

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来源期刊

2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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