222 nm algan基深紫外led对SARS-2 (Covid-19)的消毒效果显著增强

2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI:10.1109/NUSOD52207.2021.9541484

Tariq Jamil, Muhammad Usman, Habibullah Jamal, Sibghatullah I. Khan

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引用次数: 0

摘要

本研究提出了一种基于algan的深紫外发光二极管(DUV LEDs)用于SARS-2 (Covid-19)的消毒。对DUV led的光电特性进行了数值分析。结果表明，该LED的内量子效率(IQE)和辐射复合率均有显著提高。这种显著的增强是由于电子-空穴对在活性区域的最佳重组。这是由于增加了电子势垒高度，有效地抑制了电子泄漏。此外，由于最后量子势垒(LQB)与EBL之间晶格失配的减少，使得空穴向有源区的输运更加容易。因此，基于这些结果，我们高度相信本研究为SARS-2 (Covid-19)严重感染的高效DUV led (222 nm)消毒提供了一种新的方法。

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Marked efficiency enhancement of 222 nm AlGaN-based deep-UV LEDs for disinfection of SARS-2 (Covid-19)

The AlGaN-based deep ultraviolet lightemitting diodes (DUV LEDs) for the disinfection of SARS-2 (Covid-19) are proposed in this study. The optoelectronic characteristics of DUV LEDs are numerically analyzed. The results show that the internal quantum efficiency (IQE) and radiative recombination rate are excellently improved in the proposed LED. This significant enhancement is due to the optimal recombination of electron-hole pairs in the active region. This is attributed to the increase of potential barrier height for electron, which suppress the electron leakage effectively. Moreover, due to the decrease of lattice mismatch between the last quantum barrier (LQB) and EBL ease the holes transportation to the active region. Therefore, based on these results, we highly believe that this study provides a novel approach for highly efficient DUV LEDs (222 nm) for the disinfection of severe SARS-2 (Covid-19) infection.

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来源期刊

2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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